DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4092 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 10 A) • Low gate charge QG = 50 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 21 A) • Gate voltage rating: ±30 V • Avalanche capability ratings ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE Note Sn-Ag-Cu 100 p/package TO-3P (MP-88) typ. 5.0 g 2SK4092-A Note Pb-free (This product does not contain Pb in the external electrode and other parts.) (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±21 A ID(pulse) ±60 A Total Power Dissipation (TC = 25°C) PT1 200 W Total Power Dissipation (TA = 25°C) PT2 3 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 21 A Single Avalanche Energy Note2 EAS 29.4 mJ Storage Temperature Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18776EJ1V0DS00 (1st edition) Date Published May 2007 NS Printed in Japan 2007 2SK4092 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 10 A 4.0 RDS(on) VGS = 10 V, ID = 10 A 0.34 Input Capacitance Ciss VDS = 10 V, 3240 pF Output Capacitance Coss VGS = 0 V, 550 pF Reverse Transfer Capacitance Crss f = 1 MHz 3 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 10 A, 38 ns Rise Time tr VGS = 10 V, 15 ns Turn-off Delay Time td(off) RG = 10 Ω 58 ns Fall Time tf 12 ns Total Gate Charge QG VDD = 450 V, 50 nC Gate to Source Charge QGS VGS = 10 V, 24 nC QGD ID = 21 A 17 nC VF(S-D) IF = 21 A, VGS = 0 V 0.9 Reverse Recovery Time trr IF = 21 A, VGS = 0 V, 480 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 6000 nC Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note 3.0 S 0.4 1.5 Ω V Note Pulsed TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L VGS RL PG. 50 Ω VGS VDD VGS = 20 → 0 V RG PG. Wave Form 0 VGS 10% 90% VDD VDS IAS 90% BVDSS VDS ID VDS τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = 2 mA RL 50 Ω VDD 90% VDS VGS 0 Data Sheet D18776EJ1V0DS 0 10% 10% tr td(off) Wave Form td(on) ton tf toff 2SK4092 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 250 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 200 150 100 50 0 0 25 50 75 100 125 0 150 25 Tch - Channel Temperature - °C 50 75 100 125 150 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(DC) 100 ID(pulse) PW =1 10 μs i m s 1i 0 m i D er 1 00 1i ed imit ) L ) ( on RD S = 1i 0 V S (V G w Po s is si t io pa 0.1 n d it e m Li 0.01 TC = 25°C Single Pulse 0.001 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A i 100 Rth(ch-A) = 41.67°C/Wi 10 Rth(ch-C) = 0.625°C/Wi 1 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet D18776EJ1V0DS 10 100 1000 3 2SK4092 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 50 100 VDS = 10 V Pulsed VGS = 20 V ID - Drain Current - A ID - Drain Current - A 40 10 V 30 20 10 10 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 1 0.1 Pulsed 0 0.01 0 10 20 30 40 50 0 5 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S 4 3 2 VDS = 10 V ID = 1 mA 0 -25 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 25 75 125 175 VDS = 10 V Pulsed Tch = −55°C −25°C 25°C 10 75°C 125°C 150°C 1 0.1 0.01 0.01 0.1 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 Pulsed 1.5 1 ID = 21 A 0.5 10 A 0 0 5 10 15 20 Data Sheet D18776EJ1V0DS 100 2 Pulsed 1.5 1 VGS = 10 V 0.5 20 V 0 0.1 1 10 ID - Drain Current - A VGS - Gate to Source Voltage - V 4 100 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - Ω VGS(off) - Gate to Source Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω 5 -75 15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1 10 100 2SK4092 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 2 10000 VGS = 10 V Pulsed Ciss, Coss, Crss - Capacitance - pF 1.5 1 ID = 21 A 0.5 10 A Ciss 1000 100 Coss 10 1 0.1 0 -75 -25 25 75 125 0.1 175 10 100 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS SWITCHING CHARACTERISTICS 1000 600 tf VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C td(off) 100 td(on) tr 10 VDD = 150 V VGS = 10 V RG = 10 Ω 12 VDD = 450 V 300 V 150 V 500 10 400 8 VGS 300 6 200 4 100 1 2 VDS ID = 21 A 0 0.1 1 10 100 0 0 10 ID - Drain Current - A 20 30 40 50 60 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 10 VGS = 10 V 1 0V 0.1 Pulsed trr - Reverse Recovery Time - ns 100 IF - Diode Forward Current - A Crss VGS = 0 V f = 1 MHz 0.01 100 di/dt = 100 A/μs VGS = 0 V 10 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D18776EJ1V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SK4092 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 21 A EA 10 S =2 9.4 mJ VDD = 150 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 1 0.01 80 60 40 20 0 0.1 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - H 6 VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 21 A 100 Data Sheet D18776EJ1V0DS 2SK4092 PACKAGE DRAWING (Unit: mm) 2 4.7 MAX. 1.5 TYP. 6.0 TYP. 4.5±0.2 4 3 3.0±0.25 1 19 MIN. φ 3.2±0.2 15.7 MAX. 5.0 TYP. 20.0±0.25 1.0 TYP. TO-3P (MP-88) 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D18776EJ1V0DS 7 2SK4092 • The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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