NEC 2SK4092

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4092
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low on-state resistance
RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 10 A)
• Low gate charge
QG = 50 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 21 A)
• Gate voltage rating: ±30 V
• Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
Note
Sn-Ag-Cu
100 p/package
TO-3P (MP-88) typ. 5.0 g
2SK4092-A
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±21
A
ID(pulse)
±60
A
Total Power Dissipation (TC = 25°C)
PT1
200
W
Total Power Dissipation (TA = 25°C)
PT2
3
W
Channel Temperature
Tch
150
°C
Drain Current (pulse)
Note1
Tstg
−55 to +150
°C
Single Avalanche Current
Note2
IAS
21
A
Single Avalanche Energy
Note2
EAS
29.4
mJ
Storage Temperature
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18776EJ1V0DS00 (1st edition)
Date Published May 2007 NS
Printed in Japan
2007
2SK4092
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±100
nA
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
| yfs |
VDS = 10 V, ID = 10 A
4.0
RDS(on)
VGS = 10 V, ID = 10 A
0.34
Input Capacitance
Ciss
VDS = 10 V,
3240
pF
Output Capacitance
Coss
VGS = 0 V,
550
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
3
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 10 A,
38
ns
Rise Time
tr
VGS = 10 V,
15
ns
Turn-off Delay Time
td(off)
RG = 10 Ω
58
ns
Fall Time
tf
12
ns
Total Gate Charge
QG
VDD = 450 V,
50
nC
Gate to Source Charge
QGS
VGS = 10 V,
24
nC
QGD
ID = 21 A
17
nC
VF(S-D)
IF = 21 A, VGS = 0 V
0.9
Reverse Recovery Time
trr
IF = 21 A, VGS = 0 V,
480
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
6000
nC
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
Gate to Drain Charge
Body Diode Forward Voltage
Note
3.0
S
0.4
1.5
Ω
V
Note Pulsed
TEST CIRCUIT 2 SWITCHING TIME
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
VGS
RL
PG.
50 Ω
VGS
VDD
VGS = 20 → 0 V
RG
PG.
Wave Form
0
VGS
10%
90%
VDD
VDS
IAS
90%
BVDSS
VDS
ID
VDS
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
2
IG = 2 mA
RL
50 Ω
VDD
90%
VDS
VGS
0
Data Sheet D18776EJ1V0DS
0
10%
10%
tr
td(off)
Wave Form
td(on)
ton
tf
toff
2SK4092
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
250
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
200
150
100
50
0
0
25
50
75
100
125
0
150
25
Tch - Channel Temperature - °C
50
75
100
125
150
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(DC)
100
ID(pulse)
PW
=1
10
μs
i
m
s
1i 0
m
i
D
er
1
00
1i
ed
imit
) L
)
( on
RD S = 1i 0 V
S
(V G
w
Po
s
is
si
t io
pa
0.1
n
d
it e
m
Li
0.01
TC = 25°C
Single Pulse
0.001
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
i
100
Rth(ch-A) = 41.67°C/Wi
10
Rth(ch-C) = 0.625°C/Wi
1
0.1
Single Pulse
0.01
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
Data Sheet D18776EJ1V0DS
10
100
1000
3
2SK4092
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
50
100
VDS = 10 V
Pulsed
VGS = 20 V
ID - Drain Current - A
ID - Drain Current - A
40
10 V
30
20
10
10
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
1
0.1
Pulsed
0
0.01
0
10
20
30
40
50
0
5
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
4
3
2
VDS = 10 V
ID = 1 mA
0
-25
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
25
75
125
175
VDS = 10 V
Pulsed
Tch = −55°C
−25°C
25°C
10
75°C
125°C
150°C
1
0.1
0.01
0.01
0.1
1
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
2
Pulsed
1.5
1
ID = 21 A
0.5
10 A
0
0
5
10
15
20
Data Sheet D18776EJ1V0DS
100
2
Pulsed
1.5
1
VGS = 10 V
0.5
20 V
0
0.1
1
10
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
100
Tch - Channel Temperature - °C
RDS(on) - Drain to Source On-state Resistance - Ω
VGS(off) - Gate to Source Cut-off Voltage - V
RDS(on) - Drain to Source On-state Resistance - Ω
5
-75
15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1
10
100
2SK4092
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
2
10000
VGS = 10 V
Pulsed
Ciss, Coss, Crss - Capacitance - pF
1.5
1
ID = 21 A
0.5
10 A
Ciss
1000
100
Coss
10
1
0.1
0
-75
-25
25
75
125
0.1
175
10
100
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
SWITCHING CHARACTERISTICS
1000
600
tf
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
1
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
td(off)
100
td(on)
tr
10
VDD = 150 V
VGS = 10 V
RG = 10 Ω
12
VDD = 450 V
300 V
150 V
500
10
400
8
VGS
300
6
200
4
100
1
2
VDS
ID = 21 A
0
0.1
1
10
100
0
0
10
ID - Drain Current - A
20
30
40
50
60
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
10
VGS = 10 V
1
0V
0.1
Pulsed
trr - Reverse Recovery Time - ns
100
IF - Diode Forward Current - A
Crss
VGS = 0 V
f = 1 MHz
0.01
100
di/dt = 100 A/μs
VGS = 0 V
10
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D18776EJ1V0DS
5
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2SK4092
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100
IAS = 21 A
EA
10
S
=2
9.4
mJ
VDD = 150 V
RG = 25 Ω
VGS = 20 → 0 V
Starting Tch = 25°C
1
0.01
80
60
40
20
0
0.1
1
10
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - H
6
VDD = 150 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 21 A
100
Data Sheet D18776EJ1V0DS
2SK4092
PACKAGE DRAWING (Unit: mm)
2
4.7 MAX.
1.5 TYP.
6.0 TYP.
4.5±0.2
4
3
3.0±0.25
1
19 MIN.
φ 3.2±0.2
15.7 MAX.
5.0 TYP.
20.0±0.25
1.0 TYP.
TO-3P (MP-88)
1.0±0.2
2.2±0.2
5.45 TYP.
0.6±0.1
2.8±0.1
5.45 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
Data Sheet D18776EJ1V0DS
7
2SK4092
• The information in this document is current as of May, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1