DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PRF949 UHF wideband transistor Preliminary specification 1999 Oct 29 Philips Semiconductors Preliminary specification UHF wideband transistor PRF949 PINNING SOT416 (SC75) FEATURES • Small size PIN • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector DESCRIPTION • Gold metallization ensures excellent reliability. APPLICATIONS • Communication and instrumentation systems. 3 handbook, halfpage DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT416 (SC75) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. 1 2 MAM337 Marking code: V0 Fig.1 Simplified outline (SOT416). QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.3 tbf pF fT transition frequency IC = 15 mA; VCE = 6 V; fm = 1 GHz 7 9 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 6 V; Tamb = 25 °C; f = 1 GHz − 16 − dB NF noise figure ΓS = Γopt; IC = 5 mA; VCE = 6 V; f = 1 GHz − 1.5 2.5 dB Ptot total power dissipation Ts = 90 °C; note 1 − − 180 mW Rth j-s thermal resistance from junction to soldering point Ptot = 180 mW − − 335 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. 1999 Oct 29 2 Philips Semiconductors Preliminary specification UHF wideband transistor PRF949 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 1.5 V IC DC collector current − 50 mA IC(AV) average collector current − 50 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Ts = 60 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 180 mW; Ts = 90 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. 1999 Oct 29 3 VALUE UNIT 335 K/W Philips Semiconductors Preliminary specification UHF wideband transistor PRF949 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics V(BR)CBO collector-base breakdown voltage IC = 100 µA; IE = 0 20 − − V V(BR)CEO collector-emitter breakdown voltage IC = 100 µA; IB = 0 10 − − V V(BR)EBO emitter-base breakdown voltage IE = 10 µA; IC = 0 1.5 − − V VBEF forward base-emitter voltage IE = 25 mA − − 1.05 V ICBO collector-base leakage current VCB = 10 V; IE = 0 − − 100 nA IEBO emitter-base leakage current VEB = 1 V; IC = 0 − − 100 nA hFE DC current gain IC = 5 mA; VCE = 6 V 100 150 200 IC = 15 mA; VCE = 6 V − 150 − 0.3 tbf pF AC characteristics Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − fT transition frequency IC = 15 mA; VCE = 6 V; fm = 1 GHz 7 9 − GHz |s21|2 insertion gain IC = 15 mA; VCE = 6 V; f = 1 GHz 13 15 − dB GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 6 V; Tamb = 25 °C; f = 1 GHz − 16 − dB IC = 15 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz − 10 − dB ΓS = Γopt; IC = 5 mA; VCE = 6 V; f = 1 GHz − 1.5 2.5 dB ΓS = Γopt; IC = 5 mA; VCE = 6 V; f = 2 GHz − 2.1 − dB NF noise figure Note s 21 2 - dB 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) 1999 Oct 29 4 Philips Semiconductors Preliminary specification UHF wideband transistor PRF949 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 1999 Oct 29 REFERENCES IEC JEDEC EIAJ SC-75 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Preliminary specification UHF wideband transistor PRF949 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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