DATA SHEET PHOTOCOUPLER PS2932-1,PS2933-1 HIGH COLLECTOR TO EMITTER VOLTAGE 4-PIN ULTRA SMALL FLAT-LEAD PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2932-1, PS2933-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications. An ultra small flat-lead package has been provided which realizes a reduction in mounting area of about 30% compared with the PS28xx series. FEATURES • Small and thin package (4.6 (L) × 2.5 (W) × 2.1 (H) mm) • Isolation distance (0.4 mm MIN.) • High collector to emitter voltage (VCEO = 300 V: PS2932-1) (VCEO = 350 V: PS2933-1) • High isolation voltage (BV = 2 500 Vr.m.s.) • Ordering number of taping product: PS2932-1-F3, F4: 3 500 pcs/reel PS2933-1-F3, F4: 3 500 pcs/reel APPLICATIONS • Hybrid IC • Telephone, Exchange equipment, FAX The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PN10050EJ01V0DS (1st edition) (Previous No. P15066EJ1V0DS00) Date Published November 2001 CP(K) Printed in Japan The mark • shows major revised points. NEC Corporation 2000 NEC Compound Semiconductor Devices 2001 PS2932-1,PS2933-1 PACKAGE DIMENSIONS (UNIT: mm) TOP VIEW 2.5±0.3 3 4 4.6±0.2 N 2 5.0±0.2 0.15 +0.1 –0.05 2.1 MAX. 1 4.1 MIN. 4 0.4±0.1 0.2±0.1 1.27 MARKING (example: PS2932-1) 32 Last number of type No. : 32 N An initial of "NEC" 001 No. 1 pin mark (knicked corner) Assembly lot 0 01 Week assembled Year assembled PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 4 mm Creepage Distance 4 mm Isolation Distance 2 0.4 mm Data Sheet PN10050EJ01V0DS 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 PS2932-1,PS2933-1 ORDERING INFORMATION Part Number Package PS2932-1-F3 4-pin ultra PS2932-1-F4 small flat-lead *1 Application Part Number Packing Style Embossed Tape 3 500 pcs/reel PS2933-1-F3 PS2932-1 PS2933-1 PS2933-1-F4 *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25°°C, unless otherwise specified) Parameter Symbol Ratings PS2932-1 Diode Forward Current PS2933-1 IF 50 mA ∆IF/°C 0.5 mA/°C IFP 0.5 A Power Dissipation PD 60 mW Reverse Voltage VR 6 V Forward Current Derating Peak Forward Current Transistor Unit *1 Collector to Emitter Voltage VCEO Emitter to Collector Voltage VECO 0.3 V IC 60 mA ∆PC/°C 1.2 mW/°C PC 120 mW Isolation Voltage BV 2 500 Vr.m.s. Total Power Dissipation PT 160 mW Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C Collector Current Power Dissipation Derating Power Dissipation *2 300 350 V *1 PW = 100 µs, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output Data Sheet PN10050EJ01V0DS 3 PS2932-1,PS2933-1 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 1 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1 MHz Transistor Collector to Emitter Current ICEO VCE = 300 V (350 V) Coupled Current Transfer Ratio (IC/IF) CTR IF = 1 mA, VCE = 2 V Collector Saturation Voltage VCE (sat) IF = 1 mA, IC = 2 mA MIN. TYP. MAX. Unit 0.9 1.1 1.3 V 5 µA 15 *1 400 pF 400 nA 2 000 4 500 % 0.8 1 V Ω 11 Isolation Resistance RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF VCC = 5 V, IC = 10 mA, RL = 100 Ω 20 µs *2 Rise Time *2 Fall Time tr tf 10 5 *1 ICEO condition; PS2932-1: VCE = 300 V, PS2933-1: VCE = 350 V *2 Test circuit for switching time Pulse Input VCC PW = 1 ms Duty cycle = 1/10 IF VOUT 50 Ω RL = 100 Ω CAUTIONS REGARDING NOISE Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. 4 Data Sheet PN10050EJ01V0DS PS2932-1,PS2933-1 TYPICAL CHARACTERISTICS (TA = 25°°C, unless otherwise specified) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Maximum Forward Current IF (mA) 80 60 40 0.5 mA/˚C 20 50 25 0 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 75 140 120 100 80 60 1.2 mW/˚C 40 20 125 0 25 50 75 100 125 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 60 10 Collector Current IC (mA) Forward Current IF (mA) IF = 5 mA TA = +100˚C +60˚C +25˚C 1 0˚C –25˚C –50˚C 0.1 50 2 mA 40 1 mA 30 20 10 0.5 mA 0.5 1.0 1.5 0 2.0 1 2 3 4 5 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 100 100 000 VCEO = 300 V 10 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 0.01 0.0 CTR = 1 068% 2 290% 4 360% 1 000 100 10 10 IF = 5 mA 2 mA 1 mA 0.5 mA 1 –50 –25 0 25 50 75 100 1 0.7 0.8 0.9 1.0 Collector Saturation Voltage VCE(sat) (V) Ambient Temperature TA (˚C) Data Sheet PN10050EJ01V0DS 5 # CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.4 4 000 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25˚C, IF = 1 mA, VCE = 2 V 0.2 0.0 –50 –25 0 25 50 75 VCE = 2 V 3 500 2 500 2 000 1 500 1 000 500 0 0.1 100 1 10 100 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE LONG TERM CTR DEGRADATION 1.2 VCC = 5 V, IC = 10 mA, CTR = 2 840% IF = 1 mA tr tf ts td 10 TA = 25˚C 1.0 1 CTR (Relative Value) Switching Time t (µs) Sample A B C 3 000 1 000 100 PS2932-1,PS2933-1 0.8 60˚C 0.6 0.4 0.2 0.1 100 1 000 0.0 10 Load Resistance RL (Ω) Remark The graphs indicate nominal characteristics. 6 Data Sheet PN10050EJ01V0DS 102 103 104 Time (Hr) 105 106 PS2932-1,PS2933-1 TAPING SPECIFICATIONS (UNIT: mm) 1.5+0.1 –0 2.9 MAX. 12.0±0.2 5.5±0.05 4.0±0.1 5.3±0.1 2.0±0.05 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.05 2.4±0.1 2.9±0.1 4.0±0.1 Tape Direction PS2932-1-F4 PS2933-1-F4 PS2932-1-F3 PS2933-1-F3 N N N N N N N N Outline and Dimensions (Reel) 330±2.0 2.0±0.5 13.0±0.2 Packing: 3 500 pcs/reel Data Sheet PN10050EJ01V0DS 100±1.0 21.0±0.8 2.0±0.5 13.5±1.0 11.9 to 15.4 Outer edge of flange 7 PS2932-1,PS2933-1 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) 1.27 5.7 4.14 0.6 4.7 (0.35) 0.8 ( ) : Reference value 24-R0.1 Remark This drawing is considered to meet air and outer creepage distance 4.0 mm minimum. All dimensions in this figure must be evaluated before use. 8 Data Sheet PN10050EJ01V0DS PS2932-1,PS2933-1 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260˚C MAX. 220˚C to 60 s 180˚C 120˚C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10050EJ01V0DS 9 PS2932-1,PS2933-1 • The information in this document is current as of November, 2001. The information is subject to change without notice. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 10 Data Sheet PN10050EJ01V0DS PS2932-1,PS2933-1 SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. 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