POWERSEM PSKT312

PSKT 312
PSKH 312
Thyristor Modules
Thyristor/Diode Modules
ITRMS
ITAVM
VRRM
= 2x 520 A
= 2x 320 A
= 1200-1800 V
Preliminary Data Sheet
3
VRSM
VDSM
VRRM
VDRM
V
V
1300
1500
1700
1900
1200
1400
1600
1800
Type
1
PSKT
PSKT
PSKT
PSKT
312-12io1
312-14io1
312-16io1
312-18io1
Symbol
Test Conditions
ITRMS, IFRMS
ITAVM, IFAVM
TVJ = TVJM
TC = 85°C; 180° sine
ITSM, IFSM
TVJ = 45°C;
VR = 0
∫i2dt
(di/dt)cr
76
5
4
2
PSKH
PSKH
PSKH
PSKH
312-12io1
312-14io1
312-16io1
312-18io1
Maximum Ratings
520
320
A
A
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
9200
10100
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
8000
8800
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
423 000
423 000
A 2s
A 2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
320 000
321 000
A 2s
A 2s
100
A/µs
TVJ = TVJM
repetitive, IT = 960 A
f =50 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 1 A,
non repetitive, IT = ITAVM
diG/dt = 1 A/µs
3
6 7 1
5 4 2
3
1
5 42
PSKT
PSKH
Features
International standard package
Direct copper bonded Al2O3-ceramic
with copper base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered E 148688
Keyed gate/cathode twin pins
●
●
●
500
A/µs
●
●
●
(dv/dt)cr
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
PGM
TVJ = TVJM
IT = ITAVM
PGAV
VRGM
tP = 30 µs
tP = 500 µs
TVJ
TVJM
Tstg
VISOL
Md
Weight
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
1000
V/µs
120
60
20
10
W
W
W
V
-40...+140
140
-40...+125
°C
°C
°C
3000
3600
V~
V~
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750
g
Applications
Motor control, softstarter
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Solid state switches
●
●
●
●
●
Advantages
Simple mounting
Improved temperature and power
cycling capability
Reduced protection circuits
●
●
●
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol
Test Conditions
IRRM, IDRM
TVJ = TVJM; VR = VRRM; VD = VDRM
VT, VF
IT, IF = 600 A; TVJ = 25°C
1.32
V
VT0
rT
For power-loss calculations only (TVJ = 140°C)
0.8
0.68
V
mΩ
VGT
VD = 6 V;
IGT
VD = 6 V;
2
3
150
220
V
V
mA
mA
VGD
IGD
TVJ = TVJM;
TVJ = TVJM;
VD = 2/3 VDRM
VD = 2/3 VDRM
0.25
10
V
mA
IL
TVJ = 25°C; tP = 30 µs; VD = 6 V
IG = 0.45 A; diG/dt = 0.45 A/µs
200
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
150
TVJ
TVJ
TVJ
TVJ
Characteristic Values
=
=
=
=
40
25°C
-40°C
25°C
-40°C
TVJ = 25°C; VD = 1/2 VDRM
IG = 1 A; diG/dt = 1 A/µs
tq
TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs
VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM
QS
IRM
TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/µs
RthJK
per
per
per
per
2
V
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
3
2
5
1
1
6
4
4: PGM = 20 W
5: PGM = 60 W
0.1
10-3
mA
10-2
6: PGM = 120 W
10-1
100
µs
101 A
IG
102
Fig. 1 Gate trigger characteristics
thyristor (diode); DC current
module
thyristor (diode); DC current
module
typ.
other values
see Fig. 8/9
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
dS
dA
a
1: IGT, TVJ = 140°C
mA
IGD, TVJ = 140°C
tgd
RthJC
10
200
µs
760
275
µC
A
100
0.12
0.06
0.16
0.08
K/W
K/W
K/W
K/W
12.7 m m
9.6 m m
50 m/s 2
TVJ = 25°C
µs
tgd
typ.
Limit
10
1
Dimensions in mm (1 mm = 0.0394")
PSKT
0.01
PSKH
M8x20
M8x20
0.1
1
IG
A
Fig. 2 Gate trigger delay time
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
10
600
A
106
10000
ITSM
A
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 140°C
8000
VR = 0V
I2t
DC
180° sin
120°
60°
30°
ITAVM
500
I
A2s
FAVM
TVJ = 45°C
400
6000
TVJ = 140°C
105
300
4000
200
2000
100
0
0.001
0.01
0.1
s
104
1
1
ms
t
t
0.06
0.1
0.2
0.3
0.4
0.6
0.8
500
400
300
25
50
75
100
125 °C 150
Fig. 5 Power dissipation versus onstate current and ambient
temperature (per thyristor or
diode)
RthKA K/W
W
0
Fig. 4a Maximum forward current
at case temperature
600
Ptot
0
TC
Fig. 4 I2t versus time (1-10 ms)
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
10
DC
180° sin
120°
60°
30°
200
100
0
0
100
200
300
400
500 A 0
25
50
75
100
ITAVM / IFAVM
3000
Ptot
W
125
°C
TA
150
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
RthKA K/W
0.02
0.04
0.07
0.1
0.15
0.2
0.3
2500
2000
1500
Circuit
B6
3xMCC312
or
3xPSKH 312 or
1000
3xPSKT 312
3xMCD312
500
0
0
200
400
600
800 A
IdAVM
0
25
50
75
100
°C
125
150
TA
POWERSEM GmbH, Walpersdorfer Str. 53
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
3000
W
RthKA K/W
2500
0.02
0.04
0.07
0.1
0.15
0.2
0.3
Ptot
2000
1500
Circuit
W3
3xPSKH 312 or
or
3xMCC312
3xPSKT 312
3xMCD312
1000
500
0
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
0
200
400
600
A
0
25
50
75
100
125 °C 150
TA
IRMS
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
RthJC for various conduction angles d:
0.20
K/W
0.15
d
ZthJC
DC
180°
120°
60°
30°
0.10
30°
60°
120°
180°
DC
0.05
10-2
10-1
100
101
s
102
t
1
2
3
4
Rthi (K/W)
ti (s)
0.0058
0.031
0.072
0.0112
0.00054
0.098
0.54
12
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
0.25
K/W
0.20
RthJK for various conduction angles d:
ZthJK
0.15
30°
60°
120°
180°
DC
0.10
0.05
10-2
10-1
100
d
RthJK (K/W)
DC
180°
120°
60°
30°
0.160
0.168
0.175
0.193
0.225
Constants for ZthJK calculation:
i
0.00
10-3
0.120
0.128
0.135
0.153
0.185
Constants for ZthJC calculation:
i
0.00
10-3
RthJC (K/W)
s
101
t
102
1
2
3
4
5
Rthi (K/W)
ti (s)
0.0058
0.031
0.072
0.0112
0.04
0.00054
0.098
0.54
12
12
POWERSEM GmbH, Walpersdorfer Str. 53
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20