PSKT 312 PSKH 312 Thyristor Modules Thyristor/Diode Modules ITRMS ITAVM VRRM = 2x 520 A = 2x 320 A = 1200-1800 V Preliminary Data Sheet 3 VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type 1 PSKT PSKT PSKT PSKT 312-12io1 312-14io1 312-16io1 312-18io1 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 ∫i2dt (di/dt)cr 76 5 4 2 PSKH PSKH PSKH PSKH 312-12io1 312-14io1 312-16io1 312-18io1 Maximum Ratings 520 320 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 9200 10100 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 8000 8800 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 423 000 423 000 A 2s A 2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 320 000 321 000 A 2s A 2s 100 A/µs TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 1 A, non repetitive, IT = ITAVM diG/dt = 1 A/µs 3 6 7 1 5 4 2 3 1 5 42 PSKT PSKH Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 148688 Keyed gate/cathode twin pins ● ● ● 500 A/µs ● ● ● (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM PGAV VRGM tP = 30 µs tP = 500 µs TVJ TVJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Mounting torque (M6) Terminal connection torque (M8) Typical including screws 1000 V/µs 120 60 20 10 W W W V -40...+140 140 -40...+125 °C °C °C 3000 3600 V~ V~ 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g Applications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches ● ● ● ● ● Advantages Simple mounting Improved temperature and power cycling capability Reduced protection circuits ● ● ● Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol Test Conditions IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25°C 1.32 V VT0 rT For power-loss calculations only (TVJ = 140°C) 0.8 0.68 V mΩ VGT VD = 6 V; IGT VD = 6 V; 2 3 150 220 V V mA mA VGD IGD TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25°C; tP = 30 µs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 TVJ TVJ TVJ TVJ Characteristic Values = = = = 40 25°C -40°C 25°C -40°C TVJ = 25°C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/µs tq TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM QS IRM TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/µs RthJK per per per per 2 V 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 3 2 5 1 1 6 4 4: PGM = 20 W 5: PGM = 60 W 0.1 10-3 mA 10-2 6: PGM = 120 W 10-1 100 µs 101 A IG 102 Fig. 1 Gate trigger characteristics thyristor (diode); DC current module thyristor (diode); DC current module typ. other values see Fig. 8/9 Creeping distance on surface Creepage distance in air Maximum allowable acceleration dS dA a 1: IGT, TVJ = 140°C mA IGD, TVJ = 140°C tgd RthJC 10 200 µs 760 275 µC A 100 0.12 0.06 0.16 0.08 K/W K/W K/W K/W 12.7 m m 9.6 m m 50 m/s 2 TVJ = 25°C µs tgd typ. Limit 10 1 Dimensions in mm (1 mm = 0.0394") PSKT 0.01 PSKH M8x20 M8x20 0.1 1 IG A Fig. 2 Gate trigger delay time 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 10 600 A 106 10000 ITSM A 50 Hz 80 % VRRM TVJ = 45°C TVJ = 140°C 8000 VR = 0V I2t DC 180° sin 120° 60° 30° ITAVM 500 I A2s FAVM TVJ = 45°C 400 6000 TVJ = 140°C 105 300 4000 200 2000 100 0 0.001 0.01 0.1 s 104 1 1 ms t t 0.06 0.1 0.2 0.3 0.4 0.6 0.8 500 400 300 25 50 75 100 125 °C 150 Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) RthKA K/W W 0 Fig. 4a Maximum forward current at case temperature 600 Ptot 0 TC Fig. 4 I2t versus time (1-10 ms) Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration 10 DC 180° sin 120° 60° 30° 200 100 0 0 100 200 300 400 500 A 0 25 50 75 100 ITAVM / IFAVM 3000 Ptot W 125 °C TA 150 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature RthKA K/W 0.02 0.04 0.07 0.1 0.15 0.2 0.3 2500 2000 1500 Circuit B6 3xMCC312 or 3xPSKH 312 or 1000 3xPSKT 312 3xMCD312 500 0 0 200 400 600 800 A IdAVM 0 25 50 75 100 °C 125 150 TA POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 3000 W RthKA K/W 2500 0.02 0.04 0.07 0.1 0.15 0.2 0.3 Ptot 2000 1500 Circuit W3 3xPSKH 312 or or 3xMCC312 3xPSKT 312 3xMCD312 1000 500 0 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0 200 400 600 A 0 25 50 75 100 125 °C 150 TA IRMS Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: 0.20 K/W 0.15 d ZthJC DC 180° 120° 60° 30° 0.10 30° 60° 120° 180° DC 0.05 10-2 10-1 100 101 s 102 t 1 2 3 4 Rthi (K/W) ti (s) 0.0058 0.031 0.072 0.0112 0.00054 0.098 0.54 12 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) 0.25 K/W 0.20 RthJK for various conduction angles d: ZthJK 0.15 30° 60° 120° 180° DC 0.10 0.05 10-2 10-1 100 d RthJK (K/W) DC 180° 120° 60° 30° 0.160 0.168 0.175 0.193 0.225 Constants for ZthJK calculation: i 0.00 10-3 0.120 0.128 0.135 0.153 0.185 Constants for ZthJC calculation: i 0.00 10-3 RthJC (K/W) s 101 t 102 1 2 3 4 5 Rthi (K/W) ti (s) 0.0058 0.031 0.072 0.0112 0.04 0.00054 0.098 0.54 12 12 POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20