POWERSEM PSKT162

Thyristor Modules
Thyristor/Diode Modules
PSKT 162
PSKH 162
ITRMS
ITAVM
VRRM
= 2x 300 A
= 2x 190 A
= 800-1800 V
Preliminary Data Sheet
VRSM
VRRM
Type
VDSM
VDRM
V
V
900
1300
1500
1700
1900
800
1200
1400
1600
1800
1
Version 1
Version 1
PSKT
PSKT
PSKT
PSKT
PSKT
PSKH 162/08io1
PSKH 162/12io1
PSKH 162/14io1
PSKH 162/16io1
PSKH 162/18io1
162/08io1
162/12io1
162/14io1
162/16io1
162/18io1
Symbol
Test Conditions
ITRMS, IFRMS
ITAVM, IFAVM
TVJ = TVJM
TC = 80°C; 180° sine
TC = 85°C; 180° sine
ITSM, IFSM
TVJ = 45°C;
VR = 0
∫i2dt
(di/dt)cr
Maximum Ratings
300
190
181
A
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
6000
6400
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
5250
5600
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
180 000
170 000
A 2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
137 000
128 000
A2 s
A2 s
TVJ = TVJM
repetitive, IT = 500 A
f =50 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 0.5 A
non repetitive, IT = 500 A
diG/dt = 0.5 A/µs
TVJ = TVJM;
VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
PGM
TVJ = TVJM
IT = ITAVM
●
●
A/µs
1000
V/µs
●
●
PGAV
VRGM
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
3000
3600
V~
V~
●
●
●
●
●
Mounting torque (M6)
Terminal connection torque (M6)
Weight
Typical including screws
4
3
6 7 1
5 4 2
3
1
5 42
International standard package
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Keyed gate/cathode twin pins
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
125
g
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
Advantages
●
●
Md
5
Applications
W
W
W
t = 1 min
t=1s
7
Features
●
500
6
PSKH
A/µs
120
60
8
50/60 Hz, RMS
IISOL ≤ 1 mA
tP = 30 µs
tP = 500 µs
150
3
PSKT
●
(dv/dt)cr
VISOL
2
●
●
Space and weight savings
Simple mounting with two screws
Improved temperature and power
cycling capability
Reduced protection circuits
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol
Test Conditions
IRRM, IDRM
TVJ = TVJM; VR = VRRM; VD = VDRM
VT, VF
IT, IF = 300 A; TVJ = 25°C
1.25
V
VT0
rT
For power-loss calculations only (TVJ = 125°C)
0.88
1.15
V
mΩ
VGT
VD = 6 V;
IGT
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
2.5
2.6
150
200
V
V
mA
mA
VGD
IGD
TVJ = TVJM;
VD = 2/3 VDRM
0.2
10
V
mA
IL
TVJ = 25°C; tP = 30 µs; VD = 6 V
IG = 0.5 A; diG/dt = 0.5 A/µs
300
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
200
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.5 A; diG/dt = 0.5 A/µs
2
µs
tq
TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/µs typ.
VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM
150
µs
QS
IRM
TVJ = TVJM; IT, IF = 300 A, -di/dt = 50 A/µs
550
235
µC
A
RthJC
per
per
per
per
RthJK
dS
dA
a
Characteristic Values
10
mA
Fig. 1 Gate trigger characteristics
thyristor/diode; DC current
module
thyristor/diode; DC current
module
other values
see Fig. 8/9
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
0.155
0.0775
0.225
0.1125
K/W
K/W
K/W
K/W
12.7
9.6
50
mm
mm
m/s2
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT Version 1
PSKH Version 1
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 ∫i2dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus onstate current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
3 x PSKT 162 or
3 x PSKH 162
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Circuit
W3
3 x PSKT 162 or
3 x PSKH 162
Z thJC(t)
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
RthJC for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJC (K/W)
0.155
0.167
0.176
0.197
0.227
Constants for ZthJC calculation:
i
1
2
3
ZthJK(t)
Rthi (K/W)
ti (s)
0.0072
0.0188
0.129
0.001
0.08
0.2
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
RthJK for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJK (K/W)
0.225
0.237
0.246
0.267
0.297
Constants for ZthJK calculation:
i
1
2
3
4
Rthi (K/W)
ti (s)
0.0072
0.0188
0.129
0.07
0.001
0.08
0.2
1.0
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20