Thyristor Modules Thyristor/Diode Modules PSKT 44 PSKH 44 Preliminary Data Sheet VRSM VRRM VDSM VDRM V 900 1300 1500 1700 1900 V 800 1200 1400 1600 1800 Type Version 1 PSKT 44/08io1 PSKT 44/12io1 PSKT 44/14io1 PSKT 44/16io1 PSKT 44/18io1 PSKT PSKT PSKT PSKT PSKT Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 83°C; 180° sine TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 (di/dt)cr TO-240 AA Version 8 Symbol ∫i2dt 44/08io8 44/12io8 44/14io8 44/16io8 44/18io8 2 1 PSKH 44/08io8 PSKH 44/12io8 PSKH 44/14io8 PSKH 44/16io8 PSKH 44/18io8 Maximum Ratings 80 51 49 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1150 1230 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1070 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 6600 6280 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 4750 A2s A2s 150 A/µs TVJ = TVJM repetitive, IT = 150 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/µs (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM tP = 30 µs tP = 300 µs 500 A/µs 1000 V/µs PGAV VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 °C °C °C 3000 3600 V~ V~ 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque (M5) Terminal connection torque (M5) Typical including screws PSKT Version PSKH Version ● ● ● W W W VISOL PSKT Version 3 6 7 4 5 3 6 7 1 5 4 2 3 6 1 5 2 3 1 5 2 1 8 8 Features 10 5 0.5 Weight = 2 x 80 A = 2 x 51 A = 800-1800 V ITRMS ITAVM VRRM 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g ● ● ● Applications ● ● ● DC motor control Softstart AC motor controller Light, heat and temperature control Advantages ● ● ● ● Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. International standard package, JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Gate-cathode twin pins for version 1 Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol Test Conditions IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 200 A; TVJ = 25°C 1.75 V VT0 rT For power-loss calculations only (TVJ = 125°C) 0.85 5.3 V mΩ VGT VD = 6 V; IGT VD = 6 V; 1.5 1.6 100 200 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.2 10 V mA IL TVJ = 25°C; tP = 10 µs, VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs 450 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/µs 2 µs tq TVJ = TVJM; IT = 120 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM 150 µs QS IRM TVJ = TVJM; IT, IF = 50 A, -di/dt = 0.64 A/µs 90 11 µC A RthJC per per per per RthJK dS dA a 10 Characteristic Values TVJ TVJ TVJ TVJ = = = = 5 25°C -40°C 25°C -40°C thyristor/diode; DC current module thyristor/diode; DC current module typ. other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C V mA 3: IGT, TVJ = -40°C VG 2 1 3 1 5 6 4 4: PGAV = 0.5 W 5: PGM = IGD, TVJ = 125°C 0.1 100 101 5W 6: PGM = 10 W 102 mA 104 103 IG Fig. 1 Gate trigger characteristics 1000 TVJ = 25°C 0.53 0.265 0.73 0.365 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s 2 µs tgd typ. 100 Limit 10 1 10 100 mA IG 1000 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKT Version 1 PSKT Version 8 PSKH Version 8 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3 x PSKT 44 or 3 x PSKH 44 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Circuit W3 3 x PSKT 44 or 3 x PSKH 44 PSKT 44 or PSKH 44 Z thJC (t) Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d RthJC (K/W) DC 180° 120° 60° 30° 0.53 0.55 0.58 0.6 0.62 Constants for ZthJC calculation: i 1 2 3 PSKT 44 or PSKH 44 ZthJK(t) Rthi (K/W) ti (s) 0.015 0.026 0.489 0.0035 0.02 0.195 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d RthJK (K/W) DC 180° 120° 60° 30° 0.73 0.75 0.78 0.8 0.82 Constants for ZthJK calculation: i 1 2 3 4 POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Rthi (K/W) ti (s) 0.015 0.026 0.489 0.2 0.0035 0.02 0.195 0.68 2003 POWERSEM reserves the right to change limits, test conditions and dimensions