PT60QHx45 PT60QHx45 Pulse Power Thyristor Switch Preliminary Information Replaces February 2000 version, DS5267-1.3 DS5267-1.4 April 2000 APPLICATIONS ● Pulse Power ● Crowbars ● Ignitron Replacement KEY PARAMETERS 4500V VDRM IT(AV) 1000A ITSM 22500A dI/dt 10,000A/µs FEATURES ● Double Side Cooling ● Fast Turn-on ● Low Turn-on Losses VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM /VRRM V Conditions 4500/16 Tvj = 0˚ to 125˚C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms PT60QHx45 Outline type code: H. See Package Details for further information. Lower voltage grades available. Fig.1 Package outline CURRENT RATINGS Symbol Parameter Conditions Max. Units Double Side Cooled IT(AV) Mean on-state current Half wave resistive load, Tcase = 80oC 1000 A IT(RMS) RMS value Tcase = 80oC 1570 A 1/6 PT60QHx45 SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 17.8 kA VR = 50% VRRM - 1/4 sine 15.8 x 106 A2s 10ms half sine; Tcase = 125oC 22.5 kA VR = 0 2.52 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Conditions Parameter Symbol Min. Max. Units Rth(j-c) Thermal resistance - junction to case Double side cooled dc - 0.013 o Rth(c-h) Thermal resistance - case to heatsink Clamping force 19.5kN with mounting compound Double side - 0.003 o On-state (conducting) - 135 o Reverse (blocking) - 125 o –55 125 o 18 22 kN Typ. Max. Units Tvj Tstg - C/W C/W C Virtual junction temperature Storage temperature range Clamping force C C DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 100 mA dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. Rgk ≤ 1.5Ω - 175 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 40kA Gate source 60A tr = 1.5µs to 1A, Tj = 25oC - 10000 A/µs VT(TO) Threshold voltage At Tvj = 125oC - 1.5 V On-state slope resistance At Tvj = 125oC - 0.67 mΩ Typ. Max. Units IRRM/IDRM rT Non-repetitive GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol 2/6 Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC - 1.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC - 3 A PT60QHx45 ORDERING INFORMATION PT 40Q P x 45 Lead length (x) Pulse Power Thyristor Device type Package outline type code lead length (see table, right) Voltage x100 O No lead C 8" 200mm D 10" 250mm E 12" 300mm F 16" 400mm G 18" 450mm H 20" 500mm J 24" 600mm K 30" 750mm L 40" 1000mm CURVES 5000 Measured under pulse conditions 1 2 Instantaneous on-state current, IT - (A) 4000 1: Tj = 25˚C Max 2: Tj = 125˚C Max 3000 2000 1000 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage, VT - (V) 5.0 Fig.2 Maximum (limit) on-state characteristics 3/6 PT60QHx45 Thermal impedance - (˚C/W) 0.1 Double side cooled 0.01 0.001 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.0001 0.001 0.01 0.1 Effective thermal resistance Junction to case ˚C/W Double side 0.0130 0.0141 0.0170 0.0200 1 Time - (s) Fig.3 Maximum (limit) transient thermal impedance - junction to case 4/6 10 100 PT60QHx45 Package Details For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (One in each electrode) Cathode Aux. Tube Gate Tube 15˚ 52 Anode 26 ± 0.5 Ø100 Ø62.85 9.6 Ø62.85 Cathode 55 Nominal weight: 820g Clamping force: 20kN ±10% Package outine type code: H 5/6 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com