PTD2N60/PTU2N60 600V N-Channel MOSFET PTD2N60 (TO-252) Features • • • • • • 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V Low gate charge ( typical 9nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability General Description PTU2N60 (TO-251) This Power MOSFET is produced using PHILOP's advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supplies, active power factor correction based on half bridge topology. Absolute Maximum Ratings Symbol VDSS ID Parameter PTD2N60/ PTU2N60 Units Drain to Source Voltage 600 V Continuous Drain Current(@TC = 25°C) 1.9 A Continuous Drain Current(@TC = 100°C) 1.14 A 7.6 A ± 30 V 120 mJ IDM Drain Current Pulsed (Note 1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (Note 2) Total Power Dissipation(@TC = 25 °C) PD TSTG, TJ TL W 44 Derating Factor above 25 °C W/ °C 0.35 Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. -55 to +150 °C 300 °C * Drain current limited by maximum junction temperature. Thermal Characteristic Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case - 2.87 °C /W RθJA Thermal Resistance, Junction-to-Ambient* - 50 °C /W RθJA Thermal Resistance, Junction-to-Ambient - 110 °C/W PTD2N60/PTU2N60 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 3.6 4.7 Ω -- 200 -- pF -- 20 -- pF -- 4 -- pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.95 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 2.0A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 2.0 A, VGS = 10 V (Note 4, 5) -- 10 -- ns -- 25 -- ns -- 25 -- ns -- 30 -- ns -- 9 - nC -- 1.5 -- nC -- 4.0 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.9 ISM -- -- 7.6 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 1.9 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 230 -- ns Qrr Reverse Recovery Charge -- 1.0 -- µC VGS = 0 V, IS = 2.0 A, dIF / dt = 100 A/µs Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 56 mH, IAS = 2.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature (Note 4) PTD2N60/PTU2N60 Typical Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics PTD2N60/PTU2N60 Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 9. Maximum Safe Operating Area Figure 8. On-Resistance Variation vs Temperature Figure 10. Maximum Drain Current vs Case Temperature Figure 11. Transient Thermal Response Curve PTD2N60/PTU2N60 1 0V 3 VGS VDD PTD2N60/PTU2N60 Peak Diode Recovery dv/dt Test Circuit & Waveforms + D U T V D S _ I S D L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as D U T V D D • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a te P u ls e W id th D = -------------------------G a t e P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I S D d i/d t ( D U T ) IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( D U T ) B o d y D io d e R e c o v e r y d v / d t V S D B o d y D io d e F o r w a r d V o lt a g e D r o p V D D