NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code (tape and reel) BCV 61 A BCV 61 B BCV 61 C 1Js 1Ks 1Ls Q62702-C2155 Q62702-C2156 Q62702-C2157 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage (transistor T1) VCE0 30 V Collector-base voltage (open emitter) (transistor T1) VCB0 30 Emitter-base voltage VEBS 6 Collector current IC 100 Collector peak current ICM 200 Base peak current (transistor T1) IBM 200 Total power dissipation, TS ≤ 99 ˚C2) Ptot 300 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 240 Junction - soldering point Rth JS ≤ 170 mA Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 61 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CE0 30 – – Collector-base breakdown voltage IC = 10 µA, IB = 0 V(BR)CB0 30 – – Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBS 6 – – Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C ICB0 – – – – 15 5 DC current gain1) IC = 0.1 mA, VCE = 5 V IC = 2 mA, VCE = 5 V hFE Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IC = 0.5 mA IC = 100 mA, IC = 5 mA VBEsat Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 nA µA – 100 110 200 420 BCV 61 A BCV 61 B BCV 61 C V – 180 290 520 220 450 800 mV – – 90 200 250 600 – – 700 900 – – 580 – 660 – 700 770 BCV 61 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 0.4 – – – – 1.8 DC characteristics for transistor T2 Base-emitter forward voltage IE = 10 µA IE = 250 mA V VBES Matching of transistor T1 and transistor T2 at IE2 = 0.5 mA and VCE1 = 5 V TA = 25 ˚C TA = 150 ˚C – IC1 / IC2 IC1 / IC2 0.7 0.7 – – 1.3 1.3 IE2 – 5 – mA Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz fT – 250 – MHz Collector-base capacitance VCB = 10 V, IC = iC = 0, f = 1 MHz Ccb – 3 – pF Input capacitance VEB = 0.5 V, IC = iC = 0, f = 1 MHz Cibo – 8 – Noise figure IC = 200 µA, VCE = 5 V, RS = 2 kΩ f = 1 kHz, B = 200 Hz F – 2 – dB Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz h11e – 4.5 – kΩ Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz h12e – 2 – 10– 4 Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz h21e 100 – 900 – Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz h22e – 30 – µS Thermal coupling of transistor T1 and T1: VCE = 5 V transistor T21) Maximum current for thermal stability of IC1 AC characteristics for transistor T1 1) Without emitter resistor. Device mounted on alumina 15 mm × 16.5 mm × 0.7 mm. Semiconductor Group 3 BCV 61 Test circuit for current matching Note: Voltage drop at contacts: VCO < 2 VT = 16 mV 3 Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under condition of IC1 / IE2 = 1.3 Note: BCV 61 with emitter resistors Semiconductor Group 4 BCV 61 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Semiconductor Group Permissible pulse load Ptot max/Ptot DC = f (tp) 5