MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM100HC-M • • • • IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 350V hFE DC current gain............................. 100 Non-Insulated Type APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 53.5 43.3 33 8 8 5.3 B 36.5 4.5 4.5 B E E R6 φ5.3 10.5 22 LABEL 4.5 M5 23.5 14 C Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 350 V VCEX Collector-emitter voltage VEB=2V 350 V VCBO Collector-base voltage Emitter open 400 V VEBO Emitter-base voltage Collector open 10 V IC Collector current DC 100 A –IC Collector reverse current DC (forward diode current) 100 A PC Collector dissipation TC=25°C 420 W IB Base current DC 3 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1000 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M5 — Mounting torque Mounting screw M5 — Typical value Weight ELECTRICAL CHARACTERISTICS — V 1.47~1.96 N·m 15~20 kg·cm 1.47~1.96 N·m 15~20 kg·cm 90 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=350V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=400V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=10V — — 200 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=100A (diode forward voltage) — — 1.5 V hFE DC current gain IC=100A, VCE=2V/5V 100/200 — — — — — 2.0 µs Switching time VCC=200V, IC=100A, IB1=–IB2=2A — — 10 µs — — 3.0 µs Transistor part — — 0.3 °C/ W Diode part — — 0.5 °C/ W Conductive grease applied — — 0.15 °C/ W IC=100A, IB=1A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) IB=2.0A 160 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) 200 IB=1.0A 120 IB=0.5A IB=0.2A 80 IB=0.1A 40 Tj=25°C 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 1 7 5 4 3 2 VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) VCE=2.0V Tj=25°C 10 0 7 5 4 3 2 10 –1 1.0 1.4 1.8 2.2 BASE-EMITTER VOLTAGE 2.6 3.0 10 3 7 5 3 2 7 5 3 Tj=25°C 2 Tj=125°C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 VBE(sat) 10 0 7 5 4 3 2 10 –1 VCE(sat) IB=1A Tj=25°C Tj=125°C 2 3 4 5 7 10 1 1 ton, ts, tf (µs) IC=50A Tj=25°C Tj=125°C IC=100A IC=70A 0 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 2 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 5 IC=120A 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 3 VCE=2.0V 10 2 VBE (V) 4 VCE=5.0V COLLECTOR CURRENT IC (A) SATURATION VOLTAGE 0 10 4 7 5 3 2 10 2 7 VCC=200V 5 IB1=–IB2=2A 3 2 Tj=25°C Tj=125°C ts 10 1 7 5 3 2 ton 10 0 7 5 tf 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 200 10 1 7 5 4 3 2 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) 2 ts tf 10 0 VCC=200V IC=100A 7 IB1=2A 5 Tj=25°C 4 Tj=125°C 3 2 10 –1 2 3 4 5 7 10 0 IB2=–2A 160 BASE REVERSE CURRENT –IB2 (A) Tj=125°C 120 80 40 0 2 3 4 5 7 10 1 –5A 0 400 500 VCE (V) DERATING FACTOR OF F. B. S. O. A. 10 1 7 5 3 2 TC =25°C NON–REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 0.4 0.3 0.2 0.1 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.5 TIME (s) SECOND BREAKDOWN AREA 90 DERATING FACTOR (%) s µs s C COLLECTOR CURRENT IC (A) m 1m 200 10 COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 300 100 tw=50µs 100µs D 10 2 7 5 3 2 200 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 100 10 3 7 5 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 Tj=25°C Tj=125°C 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 1 VCC=200V IB1=–IB2=2A Tj=25°C Tj=125°C 10 0 Irr 10 0 Qrr trr (µs) 1000 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr 2 3 4 5 7 10 1 10 –1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 1.0 Zth (j–c) (°C/ W) 0.8 0.6 0.4 0.2 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999