RF2117 Preliminary • 400MHz Industrial Radios • Analog Communication Systems • Portable Battery Powered Equipment 2 POWER AMPLIFIERS • 3.6V Analog Handsets The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM applications operating at 433MHz. The device is packaged in a low cost 16-lead plastic package with a metal backside. The device is self-contained with the exception of the output matching network and power supply feed line. .244 .230 1 EXPOSED HEATSINK .004 .000 .021 .015 .050 .393 .386 .287 .271 .065 .055 .158 .152 .087 .071 8°MAX 5°MIN .035 .016 .0098 .0075 Package Weight typically 0.22 grams Si BJT Si Bi-CMOS GaAs HBT GaAs MESFET SiGe HBT Si CMOS !" • Single 3V to 5.5V Supply VREG 1 VCC1 2 Bias Circuits 16 NC • Up to 2W CW Output Power 15 NC • 33dB Small Signal Gain LTUNE 3 14 RFOUT Q1C 4 13 RFOUT GND 5 12 RFOUT RFIN 6 11 NC NC 7 10 NC VPD 8 9 NC • >50% Efficiency • 400MHz to 500MHz Operation Rev A0 991201 RF2117 RF2117 PCBA High Efficiency 400MHz Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-47 RF2117 Preliminary Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage (VCC) Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load Operating Case Temperature Operating Ambient Temperature Storage Temperature Parameter Rating Unit -0.5 to +6.0 -0.5 to +3.0 1300 +10 7:1 -40 to +100 -40 to +85 -55 to +150 VDC V mA dBm °C °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25 °C, VCC =3.6V, VPD =2.2V, ZLOAD =2.7Ω, PIN =4dBm, Freq=450MHz Overall Frequency Range Maximum CW Output Power Total CW Efficiency Small-signal Gain Harmonics 400 to 500 +33 +32.5 +31.5 52 -30 Intermodulation Conversion at TX Freq. - 10MHz Power Down Isolation +2 MHz dBm dBm dBm % % dB dBc 55 45 33 -40 All Other Spurious Input VSWR Input Power Input Impedance Noise Power in Rx Band Condition <2:1 +4 50 -70 dBc +6 dBm Ω dBm -80dBm 12 dB 45 dB VCC =3.2 to 4.5V Tamb=-25 to +85 °C VCC =3.0 to 3.2V and 4.5 to 5.5V Vcc=3.0V Pout=+32.5 dBm Vcc=3.6V Pout=+32.5 dBm Vcc=3.0 to 5.5V Tamb= -25 to +85 °C Load VSWR≤6:1 all phase angles, Zs=50 Ω, Vcc=3.0V to 5.5V, Tamb= -30 to +85° C Pout=+32.5 dBm, Freq.= 410 to 485 MHz, Tamb= -30 to +85°C VSWR ≤ 6:1 all phase angles. Pout=+15dBm to +32.5 dBm VPD grounded through 1kΩ resistor Pin=+6dBm Power Control Control Voltage VPD Control Current 0 Gain Control 35 2.4 6 V mA dB Power Supply Power Supply Voltage Power Supply Current Regulated Voltage VREG Current from VREG 2-48 3.0 2.7 3.6 1100 2.8 5.3 2.9 12 V mA V mA DC Current at POUT,MAX Rev A0 991201 RF2117 Preliminary Function VREG 2 VCC1 3 LTUNE 4 Q1C 5 GND 6 RF IN 7 8 NC VPD 9 10 11 12 NC NC NC RF OUT 13 14 RF OUT RF OUT 15 16 Pkg Base NC NC GND Rev A0 991201 Description Interface Schematic Regulated Supply for bias circuit. This pin should be connected to the regulated supply with a ferrite of 240 ohms and should have a UHF decoupling capacitor (100pF) to ground at the supply end of the ferrite. An additional capacitor of 1nF can be added with the 100 pF but it’s placement is not as critical. Positive supply for the active bias circuits. Bypassing should be accomplished with a single UHF decoupling capacitor, placed close to the Pin. Additional bypassing of 1nF is also recommended, but proximity to the package is not as critical. The Inter-stage matching point of the amplifiers. Matching should be performed with a small value inductor connected from the pin to ground. Positive Supply to the first stage collector. The supply should be fed through a parallel LC network, resonant at the centre of the band of interest. A UHF decoupling capacitor should be placed from the supply end of the LC to ground. A 1nF capacitor can also be used but it’s placement it not as critical. Ground Contact for the driver stage. Keep traces physically short and connect immediately to the ground plane for best performance. It is important for stability that this pin has it’s own via to the groundplane, to minimize any common inductance. Amplifier RF input. This is a 50Ω RF input port to the amplifier. It does not contain internal DC blocking and therefore should be externally DC blocked before connecting to any device which has DC present or which contains a DC path to ground. A series UHF capacitor is recommended for the DC blocking. Not internally connected. 2 POWER AMPLIFIERS Pin 1 Power Down control. When this pin is “low” all circuits are off. A low is typically less than 0.5V at room temperature. This pin affords a measure of power control, however this response is not linear across much of the range. It is recommended that the pin be used in closed loop power control systems if it is to be used across a range of voltages and temperatures for power control. Not internally connected. Not internally connected. Not internally connected. Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. It is internally connected to pins 12, 13, and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through two of these three pins. Typically, these pins are externally connected very close to the package and used as the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. An additional network of a bias inductor (or λ/4 line) provides DC bias and helps to protect the output from high voltage swings due to severe load mismatches. Amplifier RF output, same as pin 12 Amplifier RF output, same as pin 12. Do not feed the supply to this pin alone. If this pin is used as the supply pin it must be connected in parallel with pin 12 and/or 13. Not internally connected. Not internally connected. This contact is the main ground contact for the entire device. Care should be taken to ensure that this contact is well soldered in order to prevent performance from being degraded from that indicated in the specifications. 2-49 RF2117 Preliminary VREG 1µF VCC 3.3µF POWER AMPLIFIERS 2 1nF 1nF 100pF 100pF 1 240 Ω Ferrite 1nF 100pF 2 16 Bias Circuits 15 3 14 2.7nH 4 13 47pF 5 12 6 11 7 10 8 9 2.2nH 1nF 4.7nH 100pF 100pF 100pF VPD 50 Ω µstrip 22 Ω Ferrite 30pF 13pF 240 Ω Ferrite 100pF 2-50 Rev A0 991201 RF2117 Preliminary VR EG C19 1 uF 2 + R2 0 POWER AMPLIFIERS C13 1 nF V CC + L4 F errite (220 ohm ) C5 1 nF C7 100 pF 1 C6 100 pF 2 C9 3.3 uF C10 1 nF C11 100 pF 16 Bias C ircu its 15 120 nH C4 100 pF L5 20 nH 3 14 4 13 L2 F errite (220 ohm ) 5 12 6 11 L1 0 Ω R es is tor 7 10 8 9 50 Ω µs trip J1 R F IN 50 Ω µs trip C1 100 pF L3 F errite (220 ohm ) C17 100 pF C18 1 nF 50 Ω µs trip J3 RFOU T C15 27 pF C 1 5 0.3 8 8 " fro m edge of RF2117 C 1 4 0.2 3 4 " fro m edge of RF2117 VC C C16 330 pF 50 Ω µs trip C14 82 pF VR EG N o te: VC C = 3.6 V VP C = 2.7 V VR EG = 2.2 V PO U T = 31 d Bm F req = 220 M H z Pin = 3 d Bm Efficienc y = 44% L6 6.8 nH P1 P2 1 1 2 2 3 CON 3 VC C P3 1 VP D 2 3 3 CON 3 CON 3 VP D Rev A0 991201 2-51 RF2117 Preliminary (Download Bill of Materials from www.rfmd.com.) 2 VR EG + POWER AMPLIFIERS C19 1 uF R2 0 C13 1 nF V CC + L4 F errite (220 ohm ) C5 1 nF C7 100 pF 1 C6 100 pF 2 C9 3.3 uF C10 1 nF C11 100 pF 16 Bias C ircu its 15 50 Ω µs trip C4 100 pF L5 2.2 nH 3 14 4 13 5 12 50 Ω µs trip L2 F errite (220 ohm ) J1 R F IN 50 Ω µs trip C1 100 pF L1 F errite (22 ohm ) L3 F errite (220 ohm ) C17 100 pF 6 11 7 10 8 9 VR EG P2 1 1 2 2 CON 3 VC C 50 Ω µs trip J3 RFOU T C15 13 pF P1 3 C16 100 pF 50 Ω µs trip C14 27 pF VC C C18 1 nF L6 4.7 nH P3 1 VP D 2 3 3 CON 3 CON 3 VP D 2-52 Rev A0 991201 RF2117 Preliminary POWER AMPLIFIERS 2 Rev A0 991201 2-53 RF2117 Preliminary POWER AMPLIFIERS 2 2-54 Rev A0 991201