RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over varying supply and control voltages. Optimum Technology Matching® Applied Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS VCC 1 16 GND 0.009 0.004 0.158 0.150 0.021 0.014 0.069 0.064 0.392 0.386 0.244 0.230 0.050 0.060 0.054 8° MAX 0° MIN 0.035 0.016 Si BJT POWER AMPLIFIERS • 4.8V JCDMA/TACS Handsets 0.010 0.008 Package Style: Standard Batwing Features • Single 4.2V to 5.0V Supply • Up to 29 dBm Linear Output Power NC 2 15 RF OUT RF IN 3 14 RF OUT • 45% Linear Efficiency GND 4 13 GND • On-board Power Down Mode GND 5 12 GND • 800MHz to 950MHz Operation GND 6 GND 7 PC 8 BIAS 11 RF OUT 10 RF OUT 9 GND Functional Block Diagram Rev B9 010417 • 29dB Gain With Analog Gain Control Ordering Information RF2132 RF2132 PCBA Linear Power Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-109 RF2132 Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage (No RF) Supply Voltage (POUT<32dBm) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Storage Temperature Junction Temperature Parameter Rating Unit -0.5 to +8.0 -0.5 to +5.0 -0.5 to +5.0 or VCC 800 +12 10:1 -40 to +150 200 VDC VDC V mA dBm Typ. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). °C °C Specification Min. Caution! ESD sensitive device. Max. Unit T=25 °C, VCC =4.8V, VPC =4.0V, Freq=824MHz to 849MHz Overall Usable Frequency Range Linear Gain Total Linear Efficiency Efficiency at Max Output OFF Isolation Second Harmonic Maximum Linear Output Power Adjacent Channel Power Rejection @ 885 kHz Adjacent Channel Power Rejection @ 1.98 MHz Maximum CW Output Power Operating Case Temperature Ambient Operating Temperature Junction to Case Thermal Resistance Input VSWR Output Load VSWR Condition 800 27 40 50 23 31.5 -30 -30 824 to 849 29 45 55 27 -30 28.5 -46 950 31 29 -44 dBc -58 -56 dBc 110 100 dBm °C °C °C/W 32 85 MHz dB % % dB dBc VPC =0V,PIN =+6dBm Including Second Harmonic Trap IS-95A CDMA Modulation Pout = 28 dBm ACPR can be improved by trading off efficiency. Pout = 28 dBm Pout = 31 dBm, Efficiency = 55% <2:1 10:1 No oscillations Power Down Turn On/Off Time Total Current VPC “OFF” Voltage VPC “ON” Voltage 0.2 3.6 4.0 100 10 0.5 Vcc ns µA V V 4.8 40 15 5.0 100 20 V mA mA “OFF” State Power Supply Power Supply Voltage Idle Current Current into VPC pin 2-110 4.2 Operating voltage VPC =4.0V “ON” State Rev B9 010417 RF2132 Function VCC1 2 3 NC RF IN 4 GND 5 6 GND GND 7 8 GND PC 9 10 11 12 13 14 15 16 GND RF OUT RF OUT GND GND RF OUT RF OUT GND Rev B9 010417 Description Interface Schematic Power supply for the driver stage, and interstage matching. Shunt inductance is required on this pin, which can be achieved by an inductor to VCC, with a decoupling capacitor on the VCC side. The value of the inductor is frequency dependent; 3.3nH is required for 830MHz, and 1.2nH for 950MHz. Instead of an inductor, a high impedance microstrip line can be used. Not Connected. RF input. This is a 50Ω input, but the actual input impedance depends on the interstage matching network connected to pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance. Same as pin 4. VCC RF IN From Bias Stages 2 See pin 1. POWER AMPLIFIERS Pin 1 Ground for stage 1. Keep traces physically short and connect immediately to ground plane for best performance. This ground should be isolated from the batwing and other ground contacts. See evaluation board layout. Same as pin 6. Power Control. When this pin is "low", all circuits are shut off. A "low" is typically 0.5V or less at room temperature. During normal operation this pin is the power control. Control range varies from about 2V for 0dBm to VCC for +31dBm RF output power. The maximum power that can be achieved depends on the actual output matching. PC should never exceed 5.0V or VCC, whichever is the lowest. PC To RF Transistors Same as pin 4. RF Output and power supply for the output stage. The four output pins are combined, and bias voltage for the final stage is provided through these pins. The external path must be kept symmetric until combined to ensure stability. An external matching network is required to provide the optimum load impedance; see the application schematics for details. Same as pin 10. RF OUT From Bias Stages See pin 10. Same as pin 4. Same as pin 4. Same as pin 10. See pin 10. Same as pin 10. See pin 10. Same as pin 4. 2-111 RF2132 Application Schematic VCC 1 nF Vcc = 4.8 V Vpc = 4.0 V POWER AMPLIFIERS 2 100 pF 1.8 nH 100 pF 1 16 2 15 3 14 4 13 5 12 6.8 nH 100 pF RF IN 3 pF 18 kΩ 6 11 100 pF 3.3 nH BIAS VPC RF OUT 7 10 8 9 12 pF 4.3 pF 1 nF Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) Power supply filtering/bypassing for V cc Vcc = 4.8 V Vpc = 4.0 V P1-1 C1 100 nF C6 100 pF C8 33 pF J1 Adds bias to the first amplifier stage for improved linearity R1 18 kΩ 1 16 2 15 3 14 4 13 5 12 8 C13 1 nF P1 P1-1 P1-3 6 P1-3 C4 1 nF C5 100 pF 7 C12 3.3 µF C3 1 µF L1 1.8 nH Interstage tuning (L1) for centering output frequency RF IN C2 11 µF C14 100 pF BIAS L2 6.8 nH 2 GND 3 PC Harmonic trap: C7 series resonates with internal bondwires of pins 14 and 15 at 2f0 to effectively short out 2nd harmonic for optimum gain and efficiency L3 3.3 nH C9 100 pF RF OUT J2 10 9 VCC Bias inductor for the amplifier output stage C7 3 pF 11 1 C10 12 pF C11 4.3 pF Matching network for optimum load impedance Power supply filtering/bypassing for V PC 2-112 Rev B9 010417 RF2132 Evaluation Board Layout 2” x 2” POWER AMPLIFIERS 2 Rev B9 010417 2-113 RF2132 RF2132 Evaluation Board Vcc = 4.8 V, Vpc = 4.0 V, Frequency = 836 MHz, IS-95A CDMA 90 350 80 ACPR 1.98 MHz 300 ACPR 885 kHz 250 70 60 200 50 Current 40 150 Current (mA) ACPR (-dBc), Efficiency (%) POWER AMPLIFIERS 2 30 100 20 Total Efficiency 50 10 0 0 28 26 24 22 20 18 16 14 12 10 Pout (dBm) 2-114 Rev B9 010417