RFP4N05L, RFP4N06L Data Sheet July 1999 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. File Number 2876.2 Features • 4A, 50V and 60V • rDS(ON) = 0.800Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power-Dissipation Limited Formerly developmental type TA09520. • Nanosecond Switching Speeds Ordering Information PART NUMBER PACKAGE • Linear Transfer Characteristics BRAND RFP4N05L TO-220AB RFP4N05L RFP4N06L TO-220AB RFP4N06L • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEL TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-274 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP4N05L, RFP4N06L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP4N05L RFP4N06L UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 60 V Drain to Gate Voltage RGS = 20KΩ (Note 1) . . . . . . . . . . . . . . . . . . . . . . VDGR 50 60 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±10 ±10 V Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 4 4 A Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 10 10 A Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 25 25 W Derating Above TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/ oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS RFP4N05L 50 - - V RFP4N06L 60 - - V VGS = VDS, ID = 250µA 1 - 2 V VDS = Rated BVDSS - - 25 µA VDS = 0.8 x Rated BVDSS, TC = 125oC - - 250 µA VGS = ±10V, VDS = 0 - - ±100 nA Drain to Source Breakdown Voltage Gate to Threshold Voltage SYMBOL BVDSS VGS(TH) Zero Gate Voltage Drain Current Gate to Source Leakage Current IDSS IGSS TEST CONDITIONS ID = 250µA, VGS = 0V Drain to Source On Voltage (Note 2) VDS(ON) ID = 4A, VGS = 5V - - 3.2 V Drain to Source On Resistance (Note 2) rDS(ON) ID = 4A, VGS = 5V, (Figures 6, 7) - - 0.800 Ω td(ON) ID ≈ 4A, VDD = 30V, RG = 6.25Ω, RL = 7.5Ω, VGS = 5V (Figures 10, 11, 12) - 10 20 ns - 65 130 ns td(OFF) - 20 40 ns tf - 30 60 ns - - 225 pF - - 100 pF - - 40 pF 5 oC/W Turn-On Delay Time Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse-Transfer Capacitance CRSS Thermal Resistance Junction to Case VGS = 0V, VDS = 25V, f = 1MHz (Figure 9) RθJC - - MIN TYP MAX UNITS ISD = 1A - - 1.4 V ISD = 2A, dlSD/dt = 100A/µs - 150 - ns Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS NOTES: 2. Pulsed: pulse duration = 300µs max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 6-275 RFP4N05L, RFP4N06L Typical Performance Curves Unless Otherwise Specified 4.5 4.0 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 3.5 3.0 2.5 2.0 1.5 1.0 0.2 0.5 0 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 0 25 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC ID, DRAIN CURRENT (A) 12 OPERATION IN THIS AREA LIMITED BY rDS(ON) RFP4N06L 0.10 RFP4N05L ID, DRAIN CURRENT (A) TJ = MAX RATED TC = 25oC VGS = 7.5V 8 6 VGS = 5V VGS = 4.5V VGS = 4V VGS = 3.5V VGS = 3V VGS = 2.5V VGS = 2V 4 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 0 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 1 2 3 4 5 6 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 o o -40oC 25 C 125 C rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS = 10V 4 3 2 7 FIGURE 4. SATURATION CHARACTERISTICS 6 5 VGS = 10V 0 1 150 10 2 0.01 IDS(ON), DRAIN TO SOURCE CURRENT (A) 75 100 125 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 1 50 125oC 1 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 5V 1.2 125oC 1 0.8 25oC 0.6 -40oC 0.4 0.2 -40oC 0 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 6-276 6 0 2 4 ID, DRAIN CURRENT (A) FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 6 RFP4N05L, RFP4N06L Typical Performance Curves 2.0 ID = 4A VGS = 5V 1.5 1.0 0.5 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 0.5 0 50 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 400 10 60 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 300 VDS, DRAIN TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 1.0 200 CISS 100 COSS CRSS 8 45 RL = 15Ω IG(REF) = 0.095mA VGS = 5V 6 30 GATE SOURCE VDD = BVDSS VOLTAGE VDD = BVDSS 4 15 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 0 0 50 2 VGS, GATE TO SOURCE VOLTAGE (V) 0 -50 VGS = VDS ID = 250µA 1.5 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.0 Unless Otherwise Specified (Continued) I 20 G(REF) IG(ACT) t, TIME (µs) I 80 G(REF) IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 6-277 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS RFP4N05L, RFP4N06L All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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