[ /Title (RFL4N 12, RFL4N1 5) /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 4A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • High Input Impedance Formerly developmental type TA9192. • rDS(ON) = 0.400Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Majority Carrier Device Symbol Ordering Information PART NUMBER D PACKAGE BRAND RFL4N12 TO-205AF RFL4N12 RFL4N15 TO-205AF RFL4N15 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 1462.2 RFL4N12, RFL4N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL4N12 RFL4N15 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 120 150 V 120 150 V Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 4 4 A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 15 15 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 8.33 8.33 W 0.0667 0.0667 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 260 oC Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS RFL4N12 120 - - V RFL4N15 150 - - V VGS = VDS , ID = 250µA (Figure 8) 2 - 4 V VDS = Rated BVDSS - - 1 µA VDS = 0.8 x Rated BVDSS , TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current SYMBOL BVDSS VGS(TH) IDSS IGSS TEST CONDITIONS ID = 250µA, VGS = 0V Drain to Source On-Voltage (Note 2) VDS(ON) ID = 4A, VGS = 10V - - 1.6 V Drain to Source On Resistance (Note 2) rDS(ON) ID = 4A, VGS = 10V (Figures 6, 7) - - 0.400 Ω VDD = 75V, ID ≈ 2A, RG = 50Ω, VGS = 10V (Figures 10, 11, 12) - 40 60 ns tr - 165 250 ns td(OFF) - 90 135 ns tf - 90 135 ns - - 850 pF Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time Fall Time Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) Output Capacitance COSS - - 230 pF Reverse-Transfer Capacitance CRSS - - 100 pF Thermal Resistance Junction to Case RθJC - - 15 oC/W TYP MAX UNITS 1.4 V - ns Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN ISD = 2A ISD = 2A, dISD/dt = 100A/µs NOTE: 2. Pulse Test: pulse duration ≤ 300µs max, duty cycle ≤ 2%. 5-2 200 RFL4N12, RFL4N15 Typical Performance Curves Unless Otherwise Specified 4.5 4.0 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 50 100 0 25 150 50 75 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE DC 150 20 TC = 25oC TJ = MAX RATED 1 125 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE PULSE DURATION = 250µs TC = 25oC ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 10 100 TC, CASE TEMPERATURE (oC) OP ER AT IO N OPERATION IN THIS AREA LIMITED BY rDS(ON) 0.1 15 VGS = 20V VGS = 8V VGS = 10V VGS = 7V 10 VGS = 6V 5 VGS = 5V RFL4N12 RFL4N15 VGS = 4V 0.01 1 100 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 0 1000 20 2 3 4 5 6 7 8 VDS , DRAIN TO SOURCE VOLTAGE (V) 9 10 18 20 0.8 VDS = 10V PULSE DURATION = 250µs VGS = 10V PULSE DURATION = 250µs 0.7 TC = 25oC 15 TC = -40oC 10 TC = 125oC 5 1 FIGURE 4. SATURATION CHARACTERISTICS rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON) , DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 0 TC = 125oC TC = 125oC 0.6 0.5 0.4 TC = 25oC 0.3 TC = -40oC 0.2 0.1 TC = -40oC 0 0 2 4 6 VGS, GATE TO SOURCE (V) 0 8 0 10 FIGURE 5. TRANSFER CHARACTERISTICS 2 4 6 8 10 12 14 ID , DRAIN CURRENT (A) 16 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5-3 RFL4N12, RFL4N15 Typical Performance Curves Unless Otherwise Specified (Continued) 1.4 ID = 4A VGS = 10V ID = 250µA 1.3 NORMALIZED GATE THRESHOLD VOLTAGE 2 1.5 1 1.2 1.1 1.0 0.9 0.8 0.7 0.5 -50 0 50 100 150 0.6 -50 200 0 TJ , JUNCTION TEMPERATURE ( oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 100 150 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 10 150 VGS, DRAIN TO SOURCE VOLTAGE (V) 1200 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 1000 C, CAPACITANCE (pF) 50 TJ , JUNCTION TEMPERATURE (oC) 112.5 800 600 CISS 400 200 COSS CRSS 0 0 10 20 30 40 50 VDD = BVDSS GATE TO SOURCE VOLTAGE 8 VDD = BVDSS 6 RL = 37.5Ω IG(REF) = 0.46mA VGS = 10V 75 0.75BVDSS 37.5 0.50BVDSS 0.25BVDSS 4 0.75BVDSS 0.50BVDSS 0.25BVDSS 2 DRAIN TO SOURCE VOLTAGE 0 60 70 0 20 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TOSOURCE ON RESISTANCE 2.5 IG (REF) IG (ACT) t, TIME (µs) 80 IG (REF) IG (ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4