RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 (TA49065) are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<45ns These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Planar Construction • Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Rated Applications • Switching Power Supplies • Power Switching Circuits Ordering Information • General Purpose PACKAGING AVAILABILITY PART NUMBER PACKAGE Package BRAND RHRU5040 TO-218 RHRU5040 RHRU5050 TO-218 RHRU5050 RHRU5060 TO-218 RHRU5060 JEDEC STYLE TO-218 ANODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . IF(AV) (TC = +93oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . TSTG, TJ 1 RHRU5040 RHRU5050 RHRU5060 UNITS 400 400 400 50 500 500 500 50 600 600 600 50 V V V A 100 100 100 A 500 500 500 A 150 40 -65 to +175 150 40 -65 to +175 150 40 -65 to +175 W mj oC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 RHRU5040, RHRU5050, RHRU5060 TC = +25oC, Unless Otherwise Specified Electrical Specifications RHRU5040 TEST CONDITION SYMBOL RHRU5050 RHRU5060 MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS IF = 50A, TC = +25oC - - 2.1 - - 2.1 - - 2.1 V IF = 50A, TC = +150oC - - 1.7 - - 1.7 - - 1.7 V VR = 400V, TC = +25oC - - 500 - - - - - - µA VR = 500V, TC = +25oC VR = 600V, TC = +25oC - - - - - 500 - - - µA - - - - - - - - 500 µA VR = 400V, TC = +150oC - - 1.5 - - - - - - mA VR = 500V, TC = +150oC VR = 600V, TC = +150oC - - - - - 1.5 - - - mA - - - - - - - - 1.5 mA IF = 1A, dIF/dt = 100A/µs - - 45 - - 45 - - 45 ns IF = 50A, dIF/dt = 100A/µs - - 50 - - 50 - - 50 ns tA IF = 50A, dIF/dt = 100A/µs - 25 - - 25 - - 25 - ns tB IF = 50A, dIF/dt = 100A/µs - 20 - - 20 - - 20 - ns QRR IF = 50A, dIF/dt = 100A/µs - 65 - - 65 - - 65 - nC VR = 10V, IF = 0A - 140 - - 140 - - 140 - pF 1.0 oC/W VF IR IR tRR CJ RθJC - - 1.0 - - 1.0 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). RθJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 +V3 t1 ≥ 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) ≤ R4 10 Q2 Q1 +V1 0 IF LLOOP t2 R2 t1 DUT dIF dt tRR tA Q4 0.25 IRM t3 IRM C1 0 R4 VR Q3 -V2 tB 0 -V4 R3 VRM FIGURE 1. tRR TEST CIRCUIT 2 FIGURE 2. tRR WAVEFORMS AND DEFINITIONS RHRU5040, RHRU5050, RHRU5060 Typical Performance Curves 3000 300 +175oC IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 1000 100 +100oC +175oC +25oC 10 1 100 +100oC 10 1 +25oC 0.1 0.01 0 0.5 1.5 2 1 VF, FORWARD VOLTAGE (V) 0 3 2.5 100 200 300 400 500 FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE TC = +25oC TC = +100oC 150 60 125 tRR t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 50 40 30 tA 20 tB 10 tRR 100 75 tA 50 tB 25 0 1 10 0 1 50 10 IF, FORWARD CURRENT (A) 200 tRR 150 100 tA tB 50 0 1 10 50 IF, FORWARD CURRENT (A) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC 3 FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC IF(AV) , AVERAGE FORWARD CURRENT (A) TC = +175oC 250 50 IF, FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC t, RECOVERY TIMES (ns) 600 VR , REVERSE VOLTAGE (V) 50 40 DC SQ. WAVE 30 20 10 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES RHRU5040, RHRU5050, RHRU5060 Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 350 300 250 200 150 100 50 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuit and Waveforms IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 L 130Ω R + VDD 1MΩ DUT 12V VAVL Q2 130Ω IL CURRENT SENSE IL I V VDD t0 12V FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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