ISAHAYA RT1N436X

〈Transistor〉
RT1N436X SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
OUTLINE
RT1N436X is a one chip transistor
with built-in bias resistor,PNP type is RT1P436X.
DRAWING
RT1N436U
UNIT:mm
RT1N436C
1.6
0.4
FEATURE
2.5
0.8
0.4
0.5
1.5
0.5
②
0.4
0.95
③
①
0.95
1.6
1.0
2.9
1.90
②
0.3
0.5
①
0.5
・Built-in bias resistor (R1=4.7kΩ,R2=47kΩ).
③
APPLICATION
C
(OUT)
R2
E
(GND)
0.16
RT1N436M
RT1N436S
0.425
4.0
1.25
0.425
③
1.0
0.1
1.0
②
0.3
0.65
2.0
1.3
③
①
0.65
3.0
0.2
0.25
0.4
0.4
②
0.8
Terminal Connector
①:Base
②:Emitter
③:Collector
2.1
1.2
0.8
①
0.8
JEITA:SC-59
JEDEC:Similar to TO-236
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1N436T
0.2
0~0.1
JEITA:-
JEDEC:-
14.0
B
(IN)
0~0.1
Equivalent circuit
R1
1.1
0.15
0.55
0.7
Inverted circuit,switching circuit,interface circuit,
driver circuit.
0.45
0~0.1
2.5
0.4
0.15
0.7
0.45
0.9
1.27 1.27
JEITA:-
JEDEC:-
JEITA:SC-70
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
Terminal Connector
①:Base
②:Emitter
③:Collector
ISAHAYA ELECTRONICS CORPORATION
①
②
③
JEITA:-
JEDEC:-
Terminal Connector
①:Emitter
②:Collector
③:Base
〈Transistor〉
RT1N436X SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
VCBO
VEBO
VCEO
I C
I CM
PC
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N436T
RT1N436U
125(※ )
+125
-55~+125
150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
RT1N436C
RT1N436S
200
+150
-55~+150
TEST CONDITION
I C=100μA,RBE=∞
VCB=50V,I E =0
VCE=5V,I C =10mA
I C =10mA,I B =0.5mA
VCE=0.2V,I C =5mA
VCE=5V,I C =100μA
VCE=6V,I
E
MIN
50
LIMIT
TYP
80
0.4
3.3
8
=-10mA
0.3
1.4
0.8
0.6
4.7
10
200
6.1
12
1000
DC FORWARD CURRENT GAIN h FE
INPUT ON VOLTEGE VI(ON)(V)
VCE=0.2V
1
VCE=5V
100
10
0.1
100
1
10
COLLECTOR CURRENT IC(mA)
C OL L EC TOR C U R R EN T
V S. IN P U T OF F V OL TA GE
COLLECTOR CURRENT I C(μA)
1000
VCE=5V
100
10
0
0.4
0.8
1.2
1.6
INPUT OFF VOLTAGE VI(OFF) (V)
2
ISAHAYA ELECTRONICS CORPORATION
UNIT
V
μA
-
V
V
V
kΩ
MHz
D C F OR W A R D C U R R EN T G A IN
V S. C OL L EC TOR C U R R EN T
10
MAX
0.1
IN P U T ON V OL TA GE
V S. C OL L EC TOR C U R R EN T
10
COLLECTOR CURRENT I C(mA)
V
V
V
mA
mA
mW
℃
℃
450
TYPICAL CHARACTERISTICS
1
UNIT
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
PARAMETER
V(BR)CEO
I CBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
RATING
RT1N436M
50
6
50
100
200
100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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Jan.2003