ISAHAYA RT3T55U

RT3T55U
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
OUTLINE DRAWING
DESCRIPTION
RT3T55U
is
a
RT1N144
chip
composite
and
transistor
RT1P144
built
Unit:mm
1.6 ±0.05
with
chip in USM6F
1.2 ±0.05
1pin マーク
package.
6
(0.5)
FEATURE
1
0.5
Silicon epitaxial type
1.6
±0.05
Each transistor elements are independent.
(0.95)
1. 0
2
0.5
Mini package for easy mounting
5
0.2 ±0.05
(0.5)
3
APPLICATION
4
(Φ0.1 ~0.2)
Inverted circuit, switching circuit,
interface circuit, driver circuit
0.12
±0.05
0.5
±0.05
※PNP built in transistor of ”-”sign is abbreviation.
⑥
④
⑤
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
⑥:COLLECTOR1
R1
RTr1
R2
R2
①
R1
②
RTr2
JEITA:-
ISAHAYA:USM6F
③
MAXIMUM RATING (Ta=25℃) (Tr1, Tr2 common)
SYMBOL
RATING
UNIT
VCBO
Collector to Base voltage
PARAMETER
50
V
VEBO
Emitter to Base voltage
6
V
VCEO
Collector to Emitter voltage
50
V
IC
Collector current
100
mA
ICM
Peak Collector current
200
mA
PC
Collector dissipation(Total, Ta=25℃)
125
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
ISAHAYA ELECTRONICS CORPORATION
6
5
4
55
1
2
3
RT3T55U
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
(Tr1,Tr2 common)
Limits
Test conditions
Typ
Max
50
-
-
V
V(BR)CEO
Collector to Emitter break down voltage
IC=100μA,RBE=∞
ICBO
Collector cut off current
VCB =50V,IE=0
hFE
DC forward current gain
VCE=5V,IC=5mA
VCE(sat)
Collector to Emitter saturation voltage
IC=10mA,IB=0.5mA
VI(ON)
Input on voltage
VCE=0.2V,IC=5mA
VI(OFF)
Input off voltage
VCE=5V,IC=100μA
R1
Input resistor
-
7.0
R2/R1
Resistor ratio
-
4.2
-
200
150
Gain band width product
fT
TYPICAL CHARACTERISTICS
VCE=6V,IE=-10mA
-
-
0.1
μA
50
-
-
-
-
0.1
0.3
V
-
1.2
1.8
V
0.4
0.7
-
V
10
13
kΩ
4.7
5.1
-
-
MHZ
(Tr1)
INPUT ON VOLTAGE
VS. COLLECTOR CURRENT
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
1000
100
VCE=0.2V
VCE=5V
DC FORWARD CURRENT GAIN hFE
INPUT ON VOLTAGE VI(ON)(V)
Tr1
Tr2
10
1
100
10
1
10
100
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
1
10
COLLECTOR CURRENT IC(mA)
1000
VCE=5V
COLLECTOR CURRENT IC(mA)
Unit
Min
100
10
0.0
0.4
0.8
1.2
1.6
2.0
INPUT OFF VOLTAGE VI(OFF)(V)
ISAHAYA ELECTRONICS CORPORATION
100
RT3T55U
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
(Tr2)
DC forward current gain-Collector Current
Input On Voltage - Collector Current
DC forward current gain hFE
Input On Voltage VI(ON)
TYPICAL CHARACTERISTICS
-10
VCB=-0.2V
-1
-0.1
-1
-10
Collector Current IC(mA)
-100
1000
VCB=-5V
100
10
1
-1
-10
Collector Current IC(mA)
Collector Current - Input Off Voltage
Collector Current IC(μA)
-1000
VCB=-5V
-100
-10
-0
-0.4
-0.8
-1.2
-1.6
Input Off Voltage VI(OFF)(V)
-2
ISAHAYA ELECTRONICS CORPORATION
-100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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herein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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Jan.2003