ISAHAYA RT6N430C

〈SMALL-SIGNAL TRANSISITOR〉
RT6N430C
TRANSISTOR WITH RESISTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
Unit : mm
2.5
1.5
● Small package for easy mounting.
②
0.5
0.4
0.95
FEATURE
①
0.9 5
0.5
2.9
1.90
DESCRIPTION
RT6N430C is a silicon NPN epitaxial type transistor.
This product is most suitable for muting circuit ,
switching circuit because of low on resistance , small
collector to emitter saturation voltage.
③
● High reverse hFE
● Small collector to emitter saturation voltage
0~0.1
0.8
1.1
Ron=0.55Ω(TYP.)(@VI=5V)
0.16
VCE(sat)=40mV(TYP.)(@IC=50mA/IB=2.5mA)
●Low on Resistance
APPLICATION
muting circuit、switching circuit
JEITA:SC-59
EQUIVALENT CIRCUIT
TERMINAL CONNECTOR
①:BASE
R1
C
(OUT)
②:EMITTER
③:COLLECTOR
B
(IN)
E
(GND)
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
40
V
VEBO
Emitter to Base voltage
40
V
VCEO
Collector to Emitter voltage
20
V
IC
Collector current
600
mA
PC
Peak Collector current
200
mW
Tj
Collector dissipation(Total Ta=25℃)
+150
℃
Tstg
Junction temperature
-55~+150
℃
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISITOR〉
RT6N430C
TRANSISTOR WITH RESISTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Limits
Test conditions
Unit
Min
Typ
Max
-
-
C to B break down voltage
V(BR)CBO
I C=50μA,I E=0mA
40
E to B break down voltage
V(BR)EBO
I C=50μA,I C=0mA
40
V
C to E break down voltage
V(BR)CEO
I C=1mA,R
20
V
Collector cut off current
ICBO
V
CB
Emitter cut off current
IEBO
V
EB
DC forward current gain
hFE
V
CE
C to E saturation voltage
VCE(sat)
Input resistor
R1
Gain band width product
fT
Output “ON” resistance
Ron
BE
=∞
=40V, I E=0mA
-
-
0.5
=40V, I C=0mA
-
-
0.5
=5V ,I C=50mA
820
-
2500
-
40
150
mV
3.29
4.7
6.11
kΩ
-
120
-
MHz
-
0.55
-
Ω
I C=50mA ,I B=2.5mA
-
V
V
CE
=10V, I E=-50mA, f=100MHz
V I=5V, R L=1kΩ, f=1MHz
ISAHAYA ELECTRONICS CORPORATION
μA
μA
-
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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mishap.
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Jan.2003