ISAHAYA INC2002AU1

INC2002AX SERIES
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
FEATURE
OUTLINE DRAWING
・Small package for easy mounting.
・High reverse hFE
・Small collector to emitter saturation voltage.
VCE(sat)=40mV(TYP.)(@IC=50mA/IB=2.5mA)
・Low on Resistance
Ron=0.65Ω(TYP.)(@IB=5mA)
1.6
0.4
0.3
0.5
②
0.8
JEITA:SC-75A
JEDEC:-
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
0.15
③
0~0.1
0.55
0.7
muting circuit , switching circuit
X W・
INC2002AM1
2.1
0.3
0.65
②
0.425
JEITA:SC-70
JEDEC:-
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
③
0.15
0.65
①
1.25
0~0.1
0.7
0.9
2.0
1.3
0.425
INC2002AC1
2.5
0.95
②
0.5
0.4
0.95
①
1.5
③
JEITA:SC-59
JEDEC:Similar to TO-236
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
0~0.1
0.8
1.1
2.9
1.90
0.5
0.16
MARKING
①
0.5
0.4
1.6
1.0
APPLICATION
INC2002AU1
ISAHAYA ELECTRONICS CORPORATION
Unit:mm
INC2002AX SERIES
.
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VEBO
VCEO
I C
PC
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
INC2002AM1
50
50
20
600
INC2002AU1
150
INC2002AC1
UNIT
V
V
V
mA
mW
℃
℃
200
+150
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
PARAMETER
V(BR)CBO
V(BR)EBO
V(BR)CEO
I CBO
I EBO
hFE
VCE(sat)
fT
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
Output “ON” resistance
Cob
RON
TEST CONDITION
MIN
50
50
20
I C=50μA,IE=0mA
I E=50μA,IC=0mA
I C=1mA,RBE=∞
VCB=50V,I E =0mA
VEB=50V,I C =0mA
VCE=5V,I C =10mA
I C =50mA,I B =2.5mA
VCE=10V,I E =-10mA,f=100MHz
VCB=10V,I E =0A,f=1MHz
IB=5mA,RL=1kΩ
LIMIT
TYP
820
40
40
4.0
0.65
MAX
0.5
0.5
2500
150
UNIT
V
V
V
μA
μA
-
mV
MHz
pF
Ω
TYPICAL CHARACTERISTICS
IC - VBE
50
COLLECTOR CURRENT:IC (mA)
COLLECTOR CURRENT:IC (mA)
IC - VCE
100
Ta=25℃
80
100uA
60
90uA
80uA
70uA
60uA
40
20
50uA
40uA
30uA
20uA
IB=10uA
0
Ta=25℃
VCE=5V
40
30
20
10
0
0
1
2
3
4
COLLECTOR TO EMITTER VOLTAGE:VCE (V)
5
0
0.2
0.4
0.6
0.8
BASE TO EMITTER VOLTAGE:VBE (V)
ISAHAYA ELECTRONICS CORPORATION
1
INC2002AX SERIES
.
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
hFER- IE
hFE - IC
10000
DC REVERSE CURRENT GAIN:hFER
DC FORWARD CURRENT GAIN:hFE
10000
1000
100
10
Ta=25℃
VCE=5V
1000
100
10
Ta=25℃
VEC=5V
1
1
0.1
1
10
100
COLLECTOR CURRENT:IC (mA)
0.1
1000
1
10
100
EMITTER CURRENT:IE (mA)
VCE(sat) - IC
fT - IE
100
Ta=25℃
IC/IB=20
TRANSITION FREQUENCY:fT(MHz)
COLLECTOR TO EMITTER SATURATION
VOLTAGE:VCE(sat)(mV)
1000
100
10
Ta=25℃
VCE=10V
80
60
40
20
0
1
0.1
1
10
100
COLLECTOR CURRENT:IC(mA)
-1
1000
-10
EMITTER CURRENT:IE(mA)
-100
Ron - IB
Cob - VCB
10
100
Ta=25℃
ON RESISTANCE:Ron (Ω)
COLLECTOR OUTPUT CAPACITANCE:
Cob(pF)
1000
10
1
Ta=25℃
IE=0mA
f=1MHz
0.1
1
0.1
0.1
1
10
COLLECTOR TO BASE VOLTAGE:VCB(V)
100
0.1
ISAHAYA ELECTRONICS CORPORATION
1
BASE CURRENT:IB(mA)
10
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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mishap.
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Jan.2009