SRLD-650-10 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: [email protected] http://www.roithner.mcb.at S6510MG TECHNICAL DATA Visible Wavelength Laserdiode Structure:InGaAlP, index guided single transverse mode Lasing wavelength: 655nm typ. Output power:10 mW, CW Package:5.6 mm MG, TO-18 PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operation Case Temperature TC Storage Temperature TSTG RATING 10 2 30 -10 .. +60 -40 .. +85 Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN Threshold Current Ith Operation Current Iop Po =10mW Operating Voltage Vop Po =10mW Lasing Wavelength lp Po =10mW 650 Beam Divergence Po =10mW 5 θ// Beam Divergence Po =10mW 30 θ⊥ Slope Efficiency 0.5 η Monitor Current Im Po =10mW 50 UNIT mW V V °C °C TYP 15 26 2.2 655 7 32 0.7 200 MAX UNIT 20 mA 40 mA 2.6 V 660 nm 9 ° 38 ° mW/mA 1 500 µA