INTEGRATED CIRCUITS SA631 1GHz low voltage LNA and mixer Product specification IC17 Data Handbook 1998 Jan 08 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 DESCRIPTION PIN CONFIGURATION The SA631 is a combined low-noise BiCMOS amplifier, and mixer designed for high-performance low-power communication systems from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at the input. The gain is stabilized by on-chip compensation to vary less than ±0.2dB over –40 to +85°C temperature range. The wide-dynamic-range mixer has a 10dB noise figure and IP3 of +3.3dBm at the input at 881MHz. The nominal current drawn from a single 3V supply is 8.3mA. Additionally, the entire circuit can be powered down to further reduce the supply current to less than 20µA. PD1 1 20 MIXER OUT PD2 2 19 MIXER OUT GND 3 18 GND LO OUT 4 17 MIXER IN GND 5 16 GND FEATURES • Low current consumption • Outstanding gain and noise figure • Excellent gain stability versus temperature and supply voltage • LNA and mixer power down capability • Designed in Philips state of the art BiCMOS QUBIC process GND 6 15 LNA IN GND 7 14 GND GND 8 13 LNA OUT GND 9 12 VCC GND 10 11 GND SR00124 Figure 1. Pin Configuration APPLICATIONS • 900MHz cellular and cordless front-end • Spread spectrum receivers • RF data links • UHF frequency conversion • Portable radio ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # –40 to +85°C SA631DK SOT266-1 20-Pin Shrink Small Outline Package (Surface-mount, SSOP) BLOCK DIAGRAM MIXER OUT 20 MIXER OUT GND 19 18 MIXER IN 17 GND LNA IN GND LNA OUT VCC GND 16 15 14 13 12 11 10 LNA 1 2 3 4 5 6 7 8 9 PD1 PD2 GND LO OUT GND GND GND GND GND GND SR01588 Figure 2. SA631 Block Diagram 1998 Jan 08 2 853–2045 18847 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VCC Supply voltage1 VIN Voltage applied to any other pin PD Power dissipation, Tamb = 25°C (still 20-Pin Plastic SSOP RATING UNITS –0.3 to +6 V –0.3 to (VCC + 0.3) V 980 mW air)2 TJMAX Maximum operating junction temperature 150 °C PMAX Maximum power input/output +20 dBm TSTG Storage temperature range –65 to +150 °C RATING UNITS NOTES: 1. Transients exceeding 8V on VCC pin may damage product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA: 20-Pin SSOP = 110°C/W 3. Pins 19 and 20 are ESD sensitive (mixer outputs). RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER VCC Supply voltage 2.7 to 5.5 V Tamb Operating ambient temperature range –40 to +85 °C Operating junction temperature –40 to +105 °C TJ DC ELECTRICAL CHARACTERISTICS VCC = +3.0V, Tamb = 25°C; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS UNITS MIN ICC Supply current TYP MAX Full power-on 8.3 mA LNA powered-down 5.2 mA Full power-down 20 µA VT PD logic threshold voltage 1.2 VIH Logic 1 level 2.0 VIL Logic 0 level IIL PD1 input current Enable = 0.4V 10 µA IIH PD2 input current Enable = 2.4V 10 µA 1998 Jan 08 1.6 –0.3 3 1.8 V VCC V 0.8 V Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 AC ELECTRICAL CHARACTERISTICS VCC = +3.0V, Tamb = 25°C; RFIN = 881MHz, fVCO = 964MHz; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS UNITS –3 TYP +3 Low Noise Amplifier fRF RF input frequency range S21 Amplifier gain 15 dB S21 Amplifier gain in power-down mode –28 dB 0.006 dB/°C 800MHz - 1.0GHz ±0.013 dB/MHz @ 881 MHz –28 dB With ext. impedance matching ∆S21/∆T Gain temperature sensitivity enabled ∆S21/∆f Gain frequency variation 800 1000 MHz S12 Amplifier reverse isolation S11 Amplifier input match –10 dB S22 Amplifier output match –10 dB Amplifier input 1dB gain compression –20 dBm IP3 Amplifier input third order intercept –7 dBm NF Amplifier noise figure 1.7 dB tON Amplifier turn-on time (Enable Lo → Hi) 120 µs tOFF Amplifier turn-off time (Enable Hi → Lo) 0.3 µs P-1dB Mixer PGC Mixer power conversion gain: RP = RL = 1.2kΩ fRF = 881MHz, fLO = 964MHz, fIF = 83MHz 9.6 dB S11M Mixer input match Ext. impedance matching req. –10 dB NFM Mixer SSB noise figure 10 dB P-1dB Mixer input 1dB gain compression –14.5 dBm IP3M Mixer input third order intercept 3.3 dBm IP2INT Mixer input second order intercept 38 dBm PRFM-IF Mixer RF feedthrough RFIN = –32dBm –45 dBm PLO-IF LO feedthrough to IF LO = –0dBm –23 dBm PLO-RFM LO to mixer input feedthrough –32 dBm PLO-RF LO to LNA input feedthrough –42 dBm Overall System GSYS 1998 Jan 08 System gain LNA + Mixer 4 23.9 24.6 25.3 dB Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 Table 1. Power ON/OFF Control Logic PD1 PD2 0 0 0 1 or open 1 or open 0 1 or open 1 or open Full chip power-down Mixer on, LNA power-down Standby (bias on) Full chip power-on (default) C1 100pF L1 560nH IFOUT C3 6.8pF C16 10pF L4 560n L6 12nH C2 10nF 20 MIXER OUT 19 MIXER OUT 18 GND C8 10nF C11 10nF C15 10pF C10 2.2pF L3 6.8nH + – 17 MIXER IN C9 0.1µF C13 33pF C14 6.8pF 16 GND 15 LNA IN VCC 3V 14 GND 13 LNA OUT 12 VCC 11 GND GND 7 GND 8 GND 9 GND 10 SA631 PD1 1 PD2 2 GND 3 LOOUT 4 GND 5 GND 6 C12 100pF VCOOUT SR01589 Figure 3. SA631 Application Circuit 1998 Jan 08 5 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 PERFORMANCE CHARACTERISTICS -13.0 -27.0 -27.5 -13.5 -28.0 85°C 25°C -14.5 -40°C -15.0 25°C -28.5 LNA GAIN (dB) MIXER 1dB (dBm) -14.0 -40°C -29.0 -29.5 85°C -30.0 -15.5 -30.5 -16.0 2.5 3 3.5 4 4.5 5 5.5 -31.0 2.5 0 VCC (V) Mixer 1dB Compression vs VCC 3.5 4 VCC (V) 4.5 5 5.5 5 5.5 LNA Gain (Disabled) vs VCC 6.0 -2 -40°C 5.0 -3 4.0 -4 3.0 -5 25°C 2.0 LNA IP3 (dBm) MIXER IP3 (dBm) 3 1.0 85°C 0.0 -6 85°C -7 -8 –1.0 -9 –2.0 -10 –3.0 -11 –4.0 -12 2.5 25°C –40°C 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 3 3.5 4 VCC (V) 4.5 LNA IP3 vs VCC Mixer IP3 vs VCC –15 –16 –17 LNA 1dB (dBm) –18 85°C –19 –20 25°C –21 –22 –40°C –23 –24 –25 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 LNA 1dB Compression vs VCC SR01590 Figure 4. 1998 Jan 08 6 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 PERFORMANCE CHARACTERISTICS 9.8 –39 9.4 –40 9.0 –41 –42 LO to LNA IN (dBm) 8.6 Icc (mA) 25°C 8.2 85°C 7.8 7.4 7.0 25°C -40°C –43 –44 85°C –45 –46 -40°C –47 6.6 –48 6.2 –49 2.5 5.8 2.5 3 3.5 4 VCC (V) 4.5 5 3 5.5 3.5 4 VCC (V) 4.5 5 5.5 LO to LNA In Feedthrough vs VCC ICC vs VCC and Temperature 11.0 –20 10.5 –21 -40°C 10.0 –22 25°C 9.0 –23 LO to IF (dBm) MIXER GAIN (dB) 9.5 85°C 8.5 8.0 7.5 -40°C –24 –25 –26 25°C 85°C –27 7.0 –28 6.5 –29 6.0 2.5 3 3.5 4 VCC (V) 4.5 5 –30 2.5 5.5 Mixer Power Gain vs VCC 3 3.5 4 VCC (V) 4.5 5 5.5 LO to IF Feedthrough vs VCC –28.0 LO to MIXER IN (dBm) –30.0 25°C –32.0 -40°C –34.0 85°C –36.0 –38.0 –40.0 –42.0 2.5 3 3.5 4 4.5 5 5.5 VCC (V) LO to Mixer In Feedthrough vs VCC SR01591 Figure 5. 1998 Jan 08 7 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 PERFORMANCE CHARACTERISTICS –42.0 15.6 15.4 –43.0 MIXER IN to IF (dBm) 15.2 –44.0 15.0 25°C LNA GAIN (dB) 25°C –45.0 –40°C –40°C 85°C –46.0 14.8 14.6 14.4 85°C 14.2 –47.0 14.0 13.8 –48.0 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 13.6 2.5 Mixer In to IF Feedthrough vs VCC 3 3.5 4 VCC (V) 4.5 5 5.5 5 5.5 LNA Gain (Enabled) vs VCC 11.0 2.0 10.8 1.9 10.6 1.8 10.4 85°C LNA NOISE FIGURE (dB) MIXER NOISE FIGURE (dB) 85°C 10.2 25°C 10.0 9.8 –40°C 9.6 1.7 1.6 1.5 1.4 1.2 9.2 1.1 3 3.5 4 4.5 5 1.0 2.5 5.5 VCC (V) –40°C 1.3 9.4 9.0 2.5 25°C 3 3.5 4 4.5 VCC (V) Mixer Noise Figure vs VCC LNA Noise Figure vs VCC SR01592 Figure 6. 1998 Jan 08 8 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer CH2 SA631 1 U FS S11 1: 40.1 Ω -129.6 Ω 200 MHz 2: 24.0 Ω -62.9 Ω 400 MHz 3: 18.6 Ω -37.4 Ω 600 MHz 4: 14.1 Ω 10.5 pF -16.7 Ω 900 MHz 4 1 3 2 START 100. 000 000 MHz STOP 1 200. 000 000 MHz SR01593 Figure 7. Typical S11 of LNA at 3V CH1 S22 1 U FS 1: 40.5 Ω -28.2 Ω 700 MHz 2: 36.1 Ω -12.4 Ω 800 MHz 3: 34.7 Ω 3.5 Ω 900 MHz 4: 34.9 Ω 3.74 Ω 661.4 pH 900 MHz 4 1 2 3 START 700. 000 000 MHz STOP 1 200. 000 000 MHz SR01253 Figure 8. Typical S22 of LNA at 3V 1998 Jan 08 9 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer CH1 S21 SA631 10 U FS 1: 6.7 U 142.5 ° 200 MHz 2: 5.9 U 112.3 ° 400 MHz 3: 5.9 U 78.1 ° 600 MHz 4: 4.5 U 21.2° 900 MHz 3 2 1 4 START 100. 000 000 MHz STOP 1 200. 000 000 MHz SR01254 Figure 9. Typical S21 of LNA at 3V CH2 S12 50 mU FS 4 1: 1.9 mU 83.0 ° 200 MHz 2: 1.6 mU 133.5 ° 400 MHz 3: 11.4 mU 141.5 ° 600 MHz 4: 27.9 mU 106.1° 900 MHz 3 21 START 100. 000 000 MHz STOP 1 200. 000 000 MHz SR01255 Figure 10. Typical S12 of LNA at 3V 1998 Jan 08 10 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer CH1 S11 SA631 1 U FS 1: 122.8 Ω -144.9 Ω 200 MHz 2: 58.0 Ω -86.8 Ω 400 MHz 3: 45.9 Ω -62.3 Ω 600 MHz 4: 26.6 Ω -43.2 Ω 4.085 pF 900 MHz 1 4 3 START 100. 000 000 MHz 2 STOP 1 200. 000 000 MHz SR01256 Figure 11. Typical S11 of Mixer at 3V 1998 Jan 08 11 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 Table 2. Typical S-Parameters of LNA at 3V LNA Freq (MHz) |S11| (U) <S11 (deg) |S21| (U) <S21 (deg) |S12| (U) <S12 (deg) |S22| (U) 100 122 0.86 –20 7.4 160 0.001 91.91 0.59 –9.62 0.86 –24 7.1 156 0.001 62 0.58 –11.71 144 0.85 –28 7.0 151 0.001 105.42 0.58 –13.86 166 0.83 –32 6.9 148 0.000 91.65 0.57 –15.89 188 0.82 –36 6.8 144 0.002 100.23 0.57 –17.80 210 0.81 –41 6.7 140 0.002 73.57 0.56 –20.05 232 0.80 –45 6.6 136 0.002 99.70 0.55 –22.37 254 0.79 –48 6.5 133 0.001 84.00 0.54 –24.60 276 0.78 –52 6.4 130 0.001 103.18 0.53 –26.89 298 0.76 –56 6.3 126 0.002 94.33 0.52 –28.72 320 0.75 –59 6.3 123 0.002 66.98 0.51 –30.98 342 0.73 –63 6.2 119 0.002 108.53 0.50 –32.79 364 0.71 –66 6.1 116 0.002 118.13 0.48 –34.68 386 0.70 –69 6.0 113 0.001 103.4 0.47 –36.06 408 0.69 –72 5.9 111 0.001 175.94 0.46 –36.64 430 0.68 –76 5.9 109 0.004 174.1 0.45 –37.21 452 0.69 –78 6.0 106 0.006 162.02 0.46 –38.41 474 0.68 –82 6.1 102 0.007 160.07 0.47 –41.54 496 0.67 –85 6.1 97 0.008 153.6 0.47 –45.75 518 0.66 –89 6.1 93 0.010 146.17 0.46 –50.35 540 0.65 –92 6.1 89 0.009 142.13 0.45 –54.73 562 0.63 –96 6.1 85 0.010 138.49 0.43 –59.16 584 0.62 –99 6.0 81 0.011 146.17 0.42 –63.93 606 0.62 –102 5.9 77 0.011 140.55 0.40 –68.56 628 0.61 –104 5.8 72 0.013 137.2 0.38 –73.48 650 0.61 –107 5.7 69 0.013 130.62 0.36 –78.19 672 0.60 –109 5.7 65 0.016 129.77 0.34 –83.75 694 0.60 –112 5.6 61 0.016 131.94 0.31 –89.81 716 0.59 –115 5.5 57 0.017 128.67 0.29 –96.92 738 0.59 –118 5.5 53 0.019 127.53 0.27 –104.48 760 0.59 –121 5.3 48 0.021 123.42 0.24 –112.81 782 0.59 –124 5.3 44 0.021 122.31 0.22 –122.41 804 0.59 –126 5.1 40 0.022 119.52 0.21 –132.81 826 0.59 –129 5.0 36 0.024 118.29 0.19 –145.39 848 0.59 –132 4.9 31 0.026 115.98 0.18 –159.13 870 0.59 –135 4.8 26 0.027 111.9 0.17 –175.11 892 0.59 –138 4.6 22 0.028 108.11 0.18 169.02 914 0.59 –142 4.5 18 0.028 105.92 0.19 154.96 936 0.59 –144 4.3 14 0.028 106.13 0.20 141.94 958 0.59 –148 4.2 9 0.030 99.79 0.22 130.27 980 0.59 –151 4.0 4 0.031 99.30 0.24 119.5 1002 0.59 –153 3.8 0 0.031 94.81 0.26 110.61 1024 0.59 –157 3.6 –2 0.032 90.91 0.28 102.16 1046 0.59 –160 3.5 –6 0.032 85.65 0.30 94.98 1068 0.59 –164 3.3 –10 0.033 86.10 0.33 88.45 1090 0.59 –167 3.2 –14 0.033 80.59 0.35 82.47 1112 0.59 –170 3.0 –18 0.031 79.18 0.36 77.17 1134 0.58 –172 2.8 –22 0.030 46.32 0.38 71.98 1156 0.58 –175 2.7 –25 0.031 78.57 0.39 67.45 1178 0.57 –178 2.5 –28 0.031 73.66 0.41 62.73 1200 0.57 178 2.4 –31 0.029 71.78 0.42 58.87 1998 Jan 08 12 <S22 (deg) Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 Table 3. Typical S-Parameters of Mixer at 3V Mixer Freq (MHz) |S11| (U) 100 122 Mixer <S11 (deg) Freq (MHz) |S11| (U) 0.73 –11 672 0.54 –65 0.73 –147 694 0.54 –67 144 0.72 –16 716 0.54 –69 166 0.72 –19 738 0.54 –71 188 0.72 –21 760 0.54 –73 210 0.71 –24 782 0.55 –76 232 0.70 –27 804 0.55 –78 254 0.70 –29 826 0.55 –80 276 0.69 –32 848 0.55 –82 298 0.68 –34 870 0.55 –85 320 0.67 –37 892 0.56 –87 342 0.66 –39 914 0.55 –90 364 0.64 –42 936 0.56 –93 386 0.63 –44 958 0.56 –96 408 0.62 –46 980 0.56 –98 430 0.61 –48 1002 0.56 –101 452 0.59 –50 1024 0.57 –104 474 0.58 –52 1046 0.57 –106 496 0.57 –53 1068 0.57 –110 518 0.56 –54 1090 0.57 –112 540 0.55 –56 1112 0.57 –115 562 0.55 –57 1134 0.57 –118 584 0.54 –59 1156 0.57 –121 606 0.54 –61 1178 0.57 –124 628 0.54 –62 1200 0.57 –127 650 0.54 –64 1998 Jan 08 13 <S11 (deg) Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm 1998 Jan 08 14 SOT266-1 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 NOTES 1998 Jan 08 15 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 Data sheet status Data sheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued datasheet before initiating or completing a design. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Copyright Philips Electronics North America Corporation 1998 All rights reserved. Printed in U.S.A. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 Date of release: 01-98 Document order number: 1998 Jan 08 16 9397 750 03414