SB2045LCT LOW VF SCHOTTKY RECTIFIER VOLTAGE 45 Volts CURRENT 20 Amperes FEATURES • Low forward voltage drop, low power losses • High efficiency operation • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight: 0.0655 ounces, 1.859 grams .058(1.47) .042(1.07) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER SYMBOL VALUE UNIT VRRM 45 V Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode I F(AV) 20 10 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode per diode I FSM 145 A R ΘJC 2 .5 TJ -55 to + 125 o C TSTG -55 to + 150 o C Typ i c a l t he r ma l r e s i s ta nc e Operating junction Storage temperature range O C / W ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 50 - - V Breakdown voltage VBR I R=1mA Instantaneous forward voltage per diode (1) VF I F=5A I F=10A TJ=25oC - 0.42 0.46 0.46 0.52 V VR=45V TJ=25 C TJ=100oC - 100 - 500 100 μA mA Reverse current per diode (2) IR o Note.1.Pulse test : 300μs pulse width, 1% duty cycle 2.Pulse test : pulse width < 40ms December 17,2010-REV.02 PAGE . 1 SB2045LCT IR, Leakage Current (mA) IF, Forward Current (A) 100 Per Diode 10 TJ = 100°C TJ = 25°C TJ = 125°C 1 TJ = 75°C 100 Per Diode TJ = 100°C 10 1 0.1 TJ = 25°C 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 20 0.7 VF, Forward Voltage (V) IF, Forward Current (A) CJ, Junction Capacitance (pF) Per Diode 1000 100 10 10 VR, Reverse Bias Voltage (V) Fig.3 Typical Junction Capacitance December 17,2010-REV.02 80 100 Fig.2 Typical Reverse Characteristics 10000 1 60 Percent of Rated Peak Reverse Voltage (%) Fig.1 Typical Forward Characteristics 0.1 40 100 12.00 Per Diode 10.00 8.00 6.00 4.00 2.00 0.00 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig.4 Forward Current Derating Curve PAGE . 2