New Product SB3H90, SB3H100 www.vishay.com Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop • Low leakage current • High forward surge capabilitmy • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-201AD • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 90 V, 100 V IFSM 100 A VF 0.65 V IR 20 μA TJ max. 175 °C For use in middle voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SB3H90 SB3H100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum working reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 Maximum average forward rectified current at TL = 90 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A V Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 A Critical rate of rise of reverse voltage dV/dt 10 000 V/μs Storage temperature range TSTG - 55 to + 175 °C TJ 175 °C Maximum operating junction temperature Revision: 19-Aug-11 Document Number: 88720 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SB3H90, SB3H100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage TJ = 25 °C IF = 3.0 A TJ = 125 °C TJ = 25 °C Maximum reverse current at rated VR TJ = 125 °C SYMBOL VF (1) IR (2) SB3H90 SB3H100 UNIT 0.80 V 0.65 20 μA 4.0 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum thermal resistance SB3H90 SB3H100 RJA (1) 50 RJL (1) 20 UNIT °C/W Note (1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SB3H100-E3/54 1.09 54 1400 13" diameter paper tape and reel SB3H100-E3/73 1.09 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 3.0 2.0 1.0 Peak Forward Surge Current (A) Average Forward Current (A) 4.0 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 80 60 40 20 10 0 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 19-Aug-11 Document Number: 88720 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SB3H90, SB3H100 www.vishay.com Vishay General Semiconductor 1000 10 TJ = 150 °C 1 TJ = 100 °C TJ = 125 °C TJ = 25 °C 0.1 100 Pulse Width = 300 μs 1 % Duty Cycle 10 0.01 0 0.2 0.4 0.6 0.8 1.0 0.1 1.2 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 1000 Instantaneous Reverse Current (μA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = 175 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 °C 100 TJ = 125 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 10 1 0.1 20 40 60 80 0 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Revision: 19-Aug-11 Document Number: 88720 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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