SemiWell Semiconductor SBP13007-S High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ - High Switching Speed - Short storge time - Wide Reverse Bias S.O.A 1.Base 2.Collector ○ c ○ 3.Emitter General Description TO-220 This devices is designed for high voltage, high speed switching characteristic,especially suitable for ballast sysytem. 1 2 3 Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage ( VBE = 0 ) 700 V VCEO Collector-Emitter Voltage ( IB = 0 ) 400 V VEBO Emitter-Base Voltage ( IC = 0 ) 9.0 V Collector Current 8.0 A Collector Peak Current ( tP ＜ 5 ms ) 16 A Base Current 4.0 A IBM Base Peak Current ( tP ＜ 5 ms ) 8.0 A PC Total Dissipation at TC = 25 °C 80 W - 65 ~ 150 °C 150 °C IC ICM IB TSTG TJ Storage Temperature Max. Operating Junction Temperature June, 2006. Rev. 1 1/4 SBP13007-S Electrical Characteristics Symbol ICEV VCEO(sus) VCE(sat) VBE(sat) ( TC = 25 °C unless otherwise noted ) Parameter Condition Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage hFE DC Current Gain ts ton Storage Time Turn on time Typ Max Units - - 1.0 5.0 mA 400 - - V 0.6 1.5 3.0 3.0 V IC = 2.0A IC = 5.0A IC = 8.0A IC = 5.0A IB = 0.4A IB = 1.0A IB = 2.0A IB = 1.0A TC = 100 °C - - IC = 2.0A IC = 5.0A IC = 5.0A IB = 0.4A IB = 1.0A IB = 1.0A TC = 100 °C - - IC = 2.0A IC = 5.0A VCE = 5V VCE = 5V 20 5 - IC = 5.0A IB1 = 1.0A TP = 25㎲ ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% 2/4 TC = 100 °C Min VCC = 125V IB2 = - 1.0A - 1.2 1.6 1.5 V 40 30 3.0 1.6 ㎲ SBP13007-S Fig 1. Saturation Voltage Fig 2. DC Current Gain Fig 3. Safe Operation Area Fig 4. Power Derating Fig 5. Resistive Load Fall Time 3/4 SBP13007-S TO-220 Package Dimension Dim. mm Typ. Min. 9.7 6.3 9.0 12.8 1.2 A B C D E F G H I J K L M N O Max. 10.1 6.7 9.47 13.3 1.4 Inch Typ. Min. 0.382 0.248 0.354 0.504 0.047 1.7 2.5 0.067 0.098 3.0 1.25 2.4 5.0 2.2 1.42 0.45 1.17 3.4 1.4 2.7 5.15 2.6 1.62 0.6 1.37 φ 0.118 0.049 0.094 0.197 0.087 0.056 0.018 0.046 0.134 0.055 0.106 0.203 0.102 0.064 0.024 0.054 3.6 E B Max. 0.398 0.264 0.373 0.524 0.055 0.142 H A φ I C1.0 F C M L G 1 D 2 1. Base 2. Collector 3. Emitter 3 J N K 4/4 O