MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS Features • • • • • • • • • Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.5 V Max @ 3.0 A, TJ = 25°C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection Device Passes ISO 7637 Pulse #1 SBRS8 and NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb-Free Packages* Mechanical Characteristics • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Notch in Plastic Body Indicates Cathode Lead Device Meets MSL 1 Requirements ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 April, 2013 − Rev. 11 1 SMC CASE 403 PLASTIC MARKING DIAGRAM AYWW B3xG G B3x x A Y WW G = Device Code = 2, 3 or 4 = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBRS320T3G SMC (Pb−Free) 2,500 / Tape & Reel SBRS8320T3G SMC (Pb−Free) 2,500 / Tape & Reel MBRS330T3G SMC (Pb−Free) 2,500 / Tape & Reel NRVBS330T3G SMC (Pb−Free) 2,500 / Tape & Reel MBRS340T3G SMC (Pb−Free) 2,500 / Tape & Reel SBRS8340T3G SMC (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBRS340T3/D MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR Average Rectified Forward Current IF(AV) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Operating Junction Temperature MBRS320T3G, SBRS8320T3G MBRS330T3G, NRVBRS330T3G MBRS340T3G, SBRS8340T3G Unit 20 30 40 V 3.0 @ TL = 110°C 4.0 @ TL = 105°C A A 80 TJ − 65 to +150 ISO 7637 Pulse #1 (100 V, 10W) °C Pulses 5000 ESD Ratings: Machine Model = C Human Body Model = 3B V > 400 > 8000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead 11 RqJL °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR V 0.50 mA 2.0 20 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 10 TJ = 100°C TJ = 125°C 1 0.1 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 25°C TJ = −40°C TJ = −65°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) TJ = 25°C TJ = −40°C TJ = −65°C 0.1 1.0 TJ = 100°C TJ = 125°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G 1.E−01 IR, REVERSE CURRENT (AMPS) 1.E−01 TJ = 125°C 1.E−02 1.E−02 TJ = 125°C 1.E−03 1.E−03 TJ = 100°C TJ = 100°C 1.E−04 1.E−04 1.E−05 1.E−06 IR, MAXIMUM REVERSE CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS (continued) TJ = 25°C 0 5 TJ = 25°C 1.E−05 10 15 20 25 30 35 40 1.E−06 5 0 10 VR, REVERSE VOLTAGE (V) PFO, AVERAGE POWER DISSIPATION (W) Freq = 20 kHz RqJL = 11°C/W dc 4 3.5 3 2.5 SQUARE WAVE 2 1.5 1 0.5 0 90 100 110 130 120 140 150 1.8 1.6 IPK/IO = p 1.4 SQUARE WAVE dc 0.8 0.6 0.4 0.2 0 0 1 0.5 2 1.5 2.5 3 3.5 4 4.5 IO, AVERAGE FORWARD CURRENT (A) Figure 6. Forward Power Dissipation TYPICAL CAPACITANCE AT 0 V = 658 pF TJ = 25°C 500 400 300 200 100 4 40 1 600 0 35 30 IPK/IO = 5 1.2 Figure 5. Current Derating 0 25 2 TL, LEAD TEMPERATURE (°C) 700 20 Figure 4. Maximum Reverse Current 5 C, CAPACITANCE (pF) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Reverse Current 4.5 15 VR, REVERSE VOLTAGE (V) 8 12 16 20 24 28 32 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance http://onsemi.com 3 36 40 5 MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G PACKAGE DIMENSIONS SMC CASE 403−03 ISSUE E HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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