SD2942
RF Power Transistors
HF/VHF/UHF N - Channel MOSFETs
General Features
■
GOLD METALLIZATION
■
EXCELLENT THERMAL STABILITY
■
COMMON SOURCE CONFIGURATION,
PUSH PULL
■
POUT = 350W MIN. WITH 15dB GAIN @
175MHz
■
LOW R DS(on)
M244 Epoxy sealed
Pin Connection
1
Description
The SD2942 is a gold metallized N-Channel MOS
field-effect RF power transistor. The SD2942
offers 25% lower R ds(ON) than industry standard
and 20% higher power saturation than ST
SD2932. These characteristics make the SD2942
ideal for 50V DC very high power application up to
250 MHz.
1
3
1. Drain
2. Gate
3. Source
3
2
2
Order Codes
Part Number
Marking
Package
Packaging
SD2942
SD2942
M244
Plastic Tray
October 2005
Rev 1
1/14
www.st.com
14
SD2942
Contents
1
Electrical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2
Thermal Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3
Electrical Characteristics (TCASE = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Typical Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
Test Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5
Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/14
SD2942
1 Electrical Data
1
Electrical Data
1.1
Maximum Rating
Table 1.
Absolute Maximum Rating (TCASE = 25°C)
Symbol
Parameter
V(BR)DSS(1)
VDGR(1)
VGS
ID
PDISS
TJ
TSTG
Value
Unit
Drain Source Voltage
130
V
Drain-Gate Voltage (RGS = 1MΩ)
130
V
Gate-Source Voltage
±20
V
Drain Current
40
A
Power Dissipation
500
W
Max. Operating Junction Temperature
+200
°C
-65 to +150
°C
Storage Temperature
1. TJ = 150 °C
1.2
Thermal Data
Table 2.
Symbol
RthJC
Thermal data
Parameter
Junction to Case thermal resistance
Value
Unit
0.35
°C/W
3/14
SD2942
1 Electrical Data
1.3
Electrical Characteristics (TCASE = 25°C)
Table 3.
Static (per section)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS(1)
VGS = 0 V
IDS = 100 mA
IDSS
VGS = 0 V
VDS = 50 V
50
µA
IGSS
VGS = 20 V
VDS = 0 V
250
nA
VGS(Q)
VDS = 10 V
ID = 250 mA
4
V
VDS(ON)
VGS = 10 V
ID = 10 A
3.0
V
GFS
VDS = 10 V
ID = 5 A
CISS
VGS = 0 V
VDS = 50 V
f = 1 MHz
415
pF
COSS
VGS = 0 V
VDS = 50 V
f = 1 MHz
236
pF
CRSS
VGS = 0 V
VDS = 50 V
f = 1 MHz
17
pF
130
V
1.5
5
mho
1. TJ = 150°C
Table 4.
Dynamic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
POUT
VDD = 50 V
IDQ = 500 mA
G PS
VDD = 50 V
IDQ = 500 mA POUT = 350 W
f = 175MHz
15
17
dB
ηD
VDD = 50 V
IDQ = 500 mA POUT = 350 W
f = 175MHz
55
61
%
Load
Mismatch
VDD = 50 V
IDQ = 500 mA POUT = 350 W
f = 175MHz
4/14
All Phase Angles
f = 175MHz
350
5:1
W
VSWR
SD2942
2
2 Impedance
Impedance
Figure 1.
Impedance Data Schematic
D
ZDL
Typical Drain
Load Impedance
Typical Input
Impedance
G
ZIN
S
Table 5.
Impedance Data
f
ZIN (Ω)
ZDL (Ω)
250 MHz
1.3 - j 1.9
1.9 + j 3.2
230 MHz
1.2 - j 1.8
2.1 + j 3.7
200 MHz
1.1 - j 1.6
2.7 +j 4.2
175 MHz
1.0 - j 1.4
3.3 + j 4.8
100 MHz
1.8 - j 2.5
7.5 + j 9
50 MHz
3.2 - j 4.4
10 + j 12
5/14
SD2942
3 Typical Performance
3
Typical Performance
Figure 2.
Capacitance Vs Drain Voltage
Figure 3.
1000
Drain Current Vs Gate Voltage
20
CISS
Vds = 10 V
18
16
14
100
12
Id (A)
Capacitance (pF)
COSS
CRSS
10
8
10
6
Freq = 1 MHz
4
Tc = +80 °C
2
Tc = +25 °C
Tc = -20 °C
1
0
0
5
10
15
20
25
30
35
40
45
50
55
0
1
2
Vdd (V)
Figure 4.
3
4
5
6
Vgs (V)
Gate Source Voltage Vs Case Temp. Figure 5.
Safe Operating Area
100
1.15
1.05
Id = 11 A Id = 10 A
Id = 7 A
Id = 9 A
1.00
Ids (A)
Vgs (V - Normalized)
1.10
Id = 5 A
0.95
10
Id = 4 A
Id = 2 A
0.90
Id = 1 A
Id = 0.25 A
0.85
Id = 0.1 A
0.80
1
-25
0
25
50
o
Tc ( C)
6/14
75
100
1
10
100
Vds (V)
1000
SD2942
3 Typical Performance
Figure 6.
Power Gain Vs Pout and Case Temp. Figure 7.
20
70
19
60
Efficiency Vs Pout and Case Temp.
+25°C
-20°C
-20°C
18
+80°C
50
Nd (%)
Gain (dB)
17
+25°C
16
40
30
15
+80°C
20
14
Vdd = 50V
Idq = 2 x 250mA
Freq = 175 MHz
13
Vdd = 50V
Idq = 2 x 250mA
Freq = 175 MHz
10
0
12
0
50
100
150
200
250
300
350
400
450
0
500
50
100
150
200
Pout (W)
Figure 8.
Pout Vs Input Power and Case Temp Figure 9.
350
400
450
500
Pout Vs Input Power & Drain Voltage
500
500
450
450
-20°C
50V
+25°C
400
350
400
350
+80°C
40V
300
300
Pout (W)
Pout (W)
250 300
Pout (W)
250
250
200
200
150
150
100
100
Vdd = 50V
Idq = 2 x 250mA
Freq = 175 MHz
50
Freq = 175 MHz
Idq = 2 x 250mA
50
0
0
0
1
2
3
4
5
6
7
Pin (W)
8
9
10
11
12
13
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Pin (W)
7/14
SD2942
3 Typical Performance
Figure 10. Pout Vs Gate Voltage & Case Temp. Figure 11. Pout Vs Drain Voltage & Input Power
500
500
Pin = 10W
450
450
- 20°C
400
400
+25°C
350
350
250
Pout (W)
Pout (W)
300
+80°C
200
Pin = 7W
300
250
Pin = 5W
150
200
100
Freq = 175 MHz
Idq = 2 x 250mA
Pin = 7W
50
150
0
-4
-3
-2
-1
0
1
2
3
4
Vgs (V)
0.42
o
Rth(j-c) ( C/W)
0.40
0.38
0.36
0.34
30
35
40
45
50
55
o
Tc ( C)
8/14
100
24
28
32
36
Vdd (V)
Figure 12. Max. Therm. Resist Vs Case Temp.
25
Freq = 175 MHz
Idq = 2 x 250mA
60
65
70
75
80
85
40
44
48
52
SD2942
4
4 Test Circuit
Test Circuit
Figure 13. 175 MHz Test Circuit Schematic
Note: 1 Dimension at component symbol are reference for component placement.
2 Gap between ground and transmission lines is + 0.002{0.05} - 0.000{0.00} Typ.
9/14
SD2942
4 Test Circuit
Table 6.
175 MHz Test Circuit Component Part List
Symbol
Description
R1,R2,R5,R6
470 Ω 1 W, Surface Mount Chip Resistor
R3,R4
360 Ω 0.5 W, Carbon Comp. Axial Lead Resistor or Equivalent
R7,R8
560 Ω 2 W, Resistor Two Turn Wire Air-Wound Axial Lead Resistor
R9,R10
20 KΩ 3.09 W, 10 Turn Wirewound Precision Potentiometer
C1,C4
680 pF ATC 130B Surface Mount Ceramic Chip Capacitor
C2,C3,C7,C8,C17,C19,C20,C21
10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor
C5
75 pF ATC 100B Surface Mount Ceramic Chip Capacitor
C6
ST40 25 pF - 115 pF Miniature variable Trimmer
C9,C10
47 pF ATC 100B Surface Mount Ceramic Chip Capacitor
C11,C12, C13
43 pF ATC 100B Surface Mount Ceramic Chip Capacitor
C14,C15,C24,C25
1200 pF ATC 700B Surface Mount Ceramic Chip Capacitor
C16,C18
470 pF ATC 700B Surface Mount Ceramic Chip Capacitor
C22,C23
0.1 µF / 500 V Surface Mount Ceramic Chip Capacitor
C26,C27
0.01 µF / 500 V Surface Mount Ceramic Chip Capacitor
C28
10 µF / 63 Aluminum Electrolytic Axial Lead Capacitor
B1
50 Ω RG316 O.D 0.076[1.93] L = 11.80[299.72] Flexible Coaxial Cable 4
Turns thru Fair-rite Bead
B2
50 Ω RG-142B O.D 0.165[4.19] L = 11.80[299.72] Flexible Coaxial Cable
T1
R.F. Transformer 4:1, 25 Ω O.D RG316-25 O.D 0.080[2.03] L = 5.90[149.86]
Flexible Coaxial Cable 2 Turns thru Fair-rite Multi-Aperture Core
T2
R.F. Transformer 1:4, 25 Ω Semi-rigid Coaxial Cable O.D. 0.141[3.58] L =
5.90[149.86]
L1
Inductor λ 1/4 Wave 50 Ω O.D 0.165[4.19] L = 11.80 [299.72] Flexible Coaxial
Cable 2 Turns thru Fair-rite Bead
FB1,FB5
Shield Bead
FB2,FB6
Multi-aperture Core
FB3
Multilayer Ferrite Chip Bead (Surface Mount)
FB4
Surface Mount Emi Shield Bead
PCB
Woven Glass Reinforced PTFE Microwave Laminate 0.06”, 1 oz EDCu, Both
sides, εr = 2.55
10/14
SD2942
4 Test Circuit
4 inches
Figure 14. 175 MHz Test Circuit Photomaster
8.50 inches
Figure 15. 175 MHz Test Circuit
11/14
SD2942
5 Mechanical Data
5
Mechanical Data
Table 7.
M244 (.400 x .860 4/L BAL N/HERM W/FLG)
mm.
inch
DIM.
MIN.
A
TYP
5.59
B
MIN.
5.84
0.220
5.08
TYP
MAX.
0.230
0.200
C
3.02
3.28
0.119
0.129
D
9.65
9.91
0.380
0.390
E
19.81
20.82
0.780
0.820
F
10.92
11.18
0.430
0.440
G
27.94
1.100
H
33.91
34.16
1.335
1.345
I
0.10
0.15
0.004
0.006
J
1.52
1.78
0.060
0.070
K
2.59
2.84
0.102
0.112
L
4.83
5.84
0.190
0.230
M
10.03
10.34
0.395
0.407
N
21.59
22.10
0.850
0.870
Figure 16. M244 Package Dimensions
Controlling Dimension: Inches
12/14
MAX.
SD2942
6
6 Revision History
Revision History
Date
Revision
Description of Changes
18 Oct 2005
1
First Issue.
13/14
SD2942
6 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14