SDB412WS SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low forward voltage • High reliability PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PR Applications • Low power rectification Absolute Maximum Ratings (Ta = 25 OC) Parameter Top View Marking Code: "PR" Simplified outline SOD-323 and symbol Symbol Value Unit Peak Reverse Voltage VRM 40 V Reverse Voltage VR 20 V Average Forward Current IO 0.5 A IFSM 3 A Junction Temperature Tj 125 O Storage Temperature Range Ts - 40 to + 125 O Peak Forward Surge Current Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 500 mA Reverse Current at VR = 10 V at VR = 40 V Total Capacitance at VR = 10 V, f = 1 MHz C C Symbol Typ. Max. Unit VF - 0.3 0.5 V IR - 30 200 µA CT 20 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 SDB412WS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 SDB412WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006