SG15N12P, SG15N12DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG15N12P SG15N12DP Symbol Test Conditions o o VCES VCGR TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; VGES VGEM Continuous Transient IC25 IC90 ICM TC=25oC TC=90oC TC=25oC, 1 ms VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load PC TC=25oC SSOA Unit 1200 1200 V ±20 ±30 V 30 15 60 ICM=40 @ 0.8 VCES A 150 W A o o 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Mounting torque with screw M3 Mounting torque with screw M3.5 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Maximum Ratings -55...+150 150 -55...+150 TJ TJM Tstg Md Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 C C 0.45/4 0.55/5 Nm/Ib.in. 4 g Weight (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. BVCES IC=250uA; VGE=0V VGE(th) IC=250uA; VCE=VGE ICES VCE=VCES; VGE=0V; typ. max. 600 2.5 Unit V 5.0 V TJ=25 C 100 uA o 3.5 mA ±100 nA 3.2 V o TJ=125 C IGES VCE=0V; VGE=±20V VCE(sat) IC=IC90; VGE=15V SG15N12P, SG15N12DP Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol gts Test Conditions IC=IC90; VCE=10V Pulse test, t 300us, duty cycle Characteristic Values min. typ. 12 15 VCE=25V; VGE=0V; f=1MHz 95 35 Qg 69 IC=IC90; VGE=15V; VCE=0.5VCES tri td(off) tfi Eoff td(on) tri pF 13 Qgc td(on) S 1720 Cres Qge max. 2% Cies Coes Unit nC 26 o Inductive load, TJ=25 C 25 ns IC=IC90; VGE=15V; 15 ns VCE=960V; RG=Roff=10 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG 180 280 ns 160 320 ns 1.75 3.0 mJ o Inductive load, TJ=125 C 25 ns IC=IC90; VGE=15V; 18 ns Eon VCE=960V; RG=Roff=10 0.60 mJ td(off) Remarks:Switching times may increase 300 ns for VCE(Clamp) 360 ns 3.5 mJ tfi Eoff 0.8VCES' higher TJ or increased RG RthJC 0.83 RthCK 0.5 Test Conditions Characteristic Values min. VF IF IRM trr IF=20A; VGE=0V IF=20A; VGE=0V; TJ=125oC typ. max. 2.6 2.1 2.8 TC=25oC TC=90oC 33 20 Unit V A IF=20V; -diF/dt=400A/us; VR=600V 15 A VGE=0V; TJ=125oC 200 40 ns IF=1A; -diF/dt=100A/us; VR=30V; VGE=0V RthJC K/W (TJ=25oC, unless otherwise specified) Reverse Diode (FRED) Symbol K/W 1.6 K/W