HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 300 µH ICM = 24 @ 0.8 VCES A PC TC = 25°C 100 W Maximum Ratings -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C Md VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns IXGH 12N60CD1 Mounting torque with screw M3 Mounting torque with screw M3.5 TO-247 AD C (TAB) G G = Gate, E = Emitter, 6 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s g °C 300 l l l Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VGE = VGE 2.5 ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC © 2002 IXYS All rights reserved V TJ = 25°C TJ = 125°C 2.1 5.0 V 200 1.5 µA mA ±100 nA 2.7 V Very high frequency IGBT New generation HDMOSTM process International standard package JEDEC TO-247AD High peak current handling capability Applications l l = ICE90, VGE = 15 V C = Collector, TAB = Collector Features l Test Conditions E 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. Weight Symbol C l l l PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies High power audio amplifiers Advantages l l Fast switching speed High power density 98623A (2/02) IXGH 12N60CD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 11 S 860 pF 100 pF Cres 15 pF Qg 32 nC 10 nC 10 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 5 ∅P IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C 20 ns tri IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Ω 20 ns 60 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 55 ns 0.09 mJ 20 ns td(off) tfi Eoff td(on) tri Eon td(off) Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Ω Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG RthJC IGBT tfi Symbol VF ns mJ 85 180 Test Conditions ns 85 180 ns 0.27 0.60 mJ 0.25 Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. I F = 15A; T VJ = 150°C T VJ = 25°C IRM V R = 100 V; I F =25A; -di F /dt = 100 A/µs L < 0.05 µH; T VJ = 100°C t rr IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C RthJC 20 0.5 e Dim. 1.25 K/W RthCK Reverse Diode (FRED) TO-247 AD Outline 1.7 2 2.5 V V 2.5 A 35 Diode ns 1.6 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1