FM120-M+ SGFM101C-D2 WILLAS THRU THRU 10.0A SURFACE MOUNT SUPER FAST RECTIFIERS -50V- 600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER D2PAK RECTIFIERS PACKAGE -20V- 200V SOD-123+ PACKAGE FM1200-M+ SGFM108C-D2 Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Package outline Features • Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. design, excellent power dissipation offers • Batch •process High current capability, low thermal forward resistance. voltage drop. better •reverse leakage current and High surge capability. • • Low profile surface mounted application in order to for overvoltage protection. • Guardring optimize board space.. • High current high-speed switching. • Ultra capability. • Super •fast reovery time for switching mode silicon application. Silicon epitaxial planar chip, metal junction. • High surge currentparts capability. meet environmental standards of • Lead-free MIL-STD-19500 /228 • Glass passivated chip junction. product packing codestandards suffix "G" of • RoHS • Lead-free parts meetfor enironmental D2PAK 0.402(10.20) 0.386(9.80) 0.046(1.20) 0.032(0.80) 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.185(4.70) 0.169(4.30) 0.055(1.40 ) 0.047(1.20) Halogen free product for packing code suffix "H" MIL-STD-19500/228 Mechanical data 0.370(9.40) 0.354(9.00) • Epoxy : UL94-V0 rated flame retardant plastic, SOD-123H • Case : Molded Mechanical data , • Terminals :Plated terminals, solderable per MIL-STD-750 retardant • Epoxy:UL94-V0 rated flame ) 0.040(1.0) 0.012(0.30 ) 0.024(0.6) 0.004(0.10 0.031(0.8) Typ. 0.192(4.8) 0.176(4.4) 0.024(0.60) 0.016(0.40) 0.031(0.8) Typ. 0.063(1.60) 0.055(1.40) 0.108( 2.70) Method 2026 • Case : Molded plastic, TO-263 / D2PAK • Polarity : Indicated by cathode band • Terminals : Solder plated, solderable per Position :Method Any • Mounting MIL-STD-750, 2026 • Weight : Approximated 0.011 • Polarity : Indicated by cathode band gram 0.205(5.20) 0.189(4.80)Dimensions 0.092( 2.30) in inches and (millimeters) Dimensions in inches and (millimeters) : Any • Mounting Position MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS • Ratings Weight : Approximated 1.46 gram at 25℃ ambient temperature unless otherwise specified. Pb-Free package is available • Single phase half wave, 60Hz, resistive of inductive load. RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” For capacitive load, derate current by 20% RATINGS PIN 1 Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 150 200 Maximum DC Blocking Voltage Maximum ratings 20 30 40 and ElectricalVDC Characteristics (AT O Forward current Peak Forward rectified Surge Current 8.3 ms single halfAmbient sine-wavetemperature = 50 C IFSM superimposed on rated load (JEDEC method) 8.3ms single half sine-wave superimposed on Forward surge current rate load (JEDEC Typical Thermal Resistance (Note 2) RΘJA methode) Storage Temperature Range Diode junction capacitance Maximum Forward Voltage at 1.0A DC *1 *2 *3 (V) (V)@T A=125℃ SGFM101C-D2 50 35 50 SGFM102C-D2 100 70 100 SGFM104C-D2 200 140 200 VF *4 V IR F (V) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. I FSM IR TYP. 40 120 MAX. UNIT 10.0 A 150 A 10 -55 to +150 50 C J - 65 to +175 80 -65 µA pF +175 O C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH V RMS VR V RRM SYMBOLS Maximum Average Reverse Current at @T A=25℃ NOTES: Symbol 1.0 MIN. IO 30 T STG CHARACTERISTICS Rated DC Blocking Voltage(V) -55 to +125 f=1MHz andTSTG applied 4V DC reverse voltage Storage temperature o V R = V RRM T J C=J 25 OC V R = V RRM T J T=J 125 OC Reverse current Range Operating Temperature 50 C unless 60 otherwise 80 noted) 100 T A =25 IO CONDITIONS Maximum Average Forward Rectified Current PARAMETER Typical Junction Capacitance (Note 1) PIN 2 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH PIN FM150-MH 3 2- Thermal Resistance From Junction to Ambient *5 t rr (ns) 0.50 Operating temperature T J, ( OC) 35 SGFM106C-D2 400 280 400 1.30 600 420 600 1.70 0.92 10voltage *2 RMS *3 Continuous reverse voltage 0.975 SGFM108C-D2 0.9 0.70 0.85 *1 Repetitive peak reverse voltage 0.5 -55 to +150 *4 Maximum forward voltage@I F =5.0A *5 Reverse recovery time, note 1 Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SGFM101C-D2 THRU THRU 10.0A SURFACE MOUNT SUPER FAST RECTIFIERS -50V- 600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER D2PAK RECTIFIERS PACKAGE -20V- 200V SOD-123+ PACKAGE FM1200-M+ SGFM108C-D2 Pb Free Product Package outline Rating and characteristic curves dissipation offers • Batch process design, excellent power Features better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to 2 Mechanical data FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE 0.146(3.7) CURRENT PEAK FORWARD SURGE CURRENT,(A) AVERAGE FORWARD CURRENT AMPERES optimize board CURRENT space. FIG.1 - FORWARD DERATING CURVE • Low power loss, high efficiency. 12 • High current capability, low forward voltage drop. • High surge capability. 10 • Guardring for overvoltage protection. • Ultra high-speed switching. 8 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 6 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 4 Halogen free product for packing code suffix "H" 0.130(3.3) 150 0.012(0.3) Typ. 120 0.071(1.8) 0.056(1.4) 90 8.3ms Single Half TJ=25 C Sine Wave 60 JEDEC method 30 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 0 0 • Case25: Molded 50 plastic, 75 SOD-123H 100 125 150 1 , AMBIENT TEMPERATURE,( °C) • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8)5Typ. 50 10 0.031(0.8) Typ. NUMBER OF CYCLES AT 60Hz 100 Dimensions in inches and (millimeters) O SGFM101C-D2 , SGFM102C-D2 SGFM104C-D2 Single phase half wave, 60Hz, resistive of inductive load. SGFM106C-D2 For capacitive load, derate current by 20% 1.0 RATINGS Maximum Recurrent Peak Reverse Voltage 0.1 RMS Voltage SGFM108C-D2 Maximum VRRM 12 20 VRMS 14 Maximum DC Blocking Voltage VDC 20 pulse width=300us 1% duty cycle IO IFSM INSTANTANEOUS FORWARD VOLTAGE, VOLTS superimposed on rated load (JEDEC method) Maximum 0.01 Average Forward Rectified Current 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Peak Forward Surge Current 8.3 ms single half sine-wave Storage Temperature Range TSTG VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ Rated DC Blocking Voltage 15 50 16 60 18 80 210.1 28 30 40 10 100 115 150 120 200 T J =25°C 35 42 50 60 56 70 105 140 80 100 150 200 1.0 0.01 0 20 60 40 80 100 120 140 40 120 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Forward Voltage at 1.0A DC 100 14 40 -55 to +125 -55 to +150 FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE 65 to +175 RECOVERY TIME CHARACTERISTIC 140 CHARACTERISTICS 13 30 OperatingFIG. Temperature Range TJ 5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) T J =100°C CJ Typical Junction Capacitance (Note 1) 120 Maximum 10 30 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) RΘJA Typical Thermal Resistance (Note 2) 50W NONINDUCTIVE 0.5010W NONINDUCTIVE 0.70 | | | | | | | | +0.5A ( ) NOTES: 25Vdc (approx.) 160 Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. ( ) D.U.T. 1W NONINDUCTIVE 0.92 trr 10 (+) 2- Thermal Resistance From Junction to Ambient 0.9 0.85 0.5 IR 80 100 1 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH Marking Code FIG. 4 - TYPICAL INSTANTANEOUS REVERSE CHARACTERISTICS T J =125°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 10 at 25℃ ambient temperature unless otherwise specified. Ratings INSTANTANEOUS REVERSE CURRENT, uAMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES Method 2026 • Polarity : Indicated by cathode band FIG. 3 - TYPICAL INSTANTANEOUR FORWARD Position : Any • Mounting CHARACTERISTICS • Weight TJ=25 C: Approximated 0.011 gram PULSE GENERATOR (NOTE 2) (+) 0 -0.25A OSCILLISCOPE (NOTE 1) 40 -1.0A NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 20 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) 2012-06 2012-09 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SGFM101C-D2 THRU THRU 10.0A SURFACE MOUNT SUPER FAST RECTIFIERS -50V- 600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER D2PAK RECTIFIERS PACKAGE -20V- 200V SOD-123+ PACKAGE FM1200-M+ SGFM108C-D2 Pb Free Product Package outline Pinning information Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Simplified outline • Low profile surface mounted application in order to Symbol optimize board space. SOD-123H 2 2 efficiency. • Low power loss, high • High current capability, low forward voltage drop. 1 3 • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 1 0.012(0.3) Typ. 3 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Marking Halogen free product for packing code suffix "H" Mechanical Type number data Marking code 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant SGFM101C-D2 SF101C • Case : Molded plastic, SOD-123H SGFM102C-D2 SF102C , • Terminals :Plated terminals, solderable per MIL-STD-750 SGFM104C-D2 Method 2026 SGFM106C-D2 • Polarity : Indicated by cathode band SGFM108C-D2 0.031(0.8) Typ. SF104C SF106C SF108C • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Suggested solder pad layout RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single halfX1sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range Y1 TJ Storage Temperature Range TSTG L C CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage X2 Y2 @T A=125℃ NOTES: PACKAGE C E -55 to +125 L 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 D2PAK 30 0.374(9.50) 40 0.098(2.50) 120 0.665(16.90) X1 - 65 to +175 0.425(10.80) X2 0.071(1.80) -55 to +150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC 14 40 E IR Y1 0.50 Y2 0.449(11.40) 0.70 0.138(3.50) 0.5 0.85 0.9 0.92 10 Dimensions in inches and (millimeters) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-09 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.