4V Drive Nch+Pch MOSFET SH8M5 Dimensions (Unit : mm) Structure Silicon N-channel / P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Package Type Inner circuit (8) Taping (7) (6) (5) (8) (7) (6) (5) TB Code Basic ordering unit (pieces) 2500 SH8M5 ∗2 ∗2 ∗1 Absolute maximum ratings (Ta=25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP∗1 IS ISP∗1 PD∗2 Tch Tstg (1) (2) (3) (4) Limits Nchannel Pchannel 30 −30 ±20 ±20 ±6.0 ±7.0 ±24 ±28 1.6 −1.6 24 −28 2 150 −55 to +150 Unit V V A A A A W °C °C (1) ∗1 (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. ∗1 Pw≤10μs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD. Thermal resistance Parameter Channel to ambient Symbol Rth (ch-a)∗ Limits 62.5 Unit °C / W ∗MOUNTED ON A CERAMIC BOARD. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.12 - Rev.A SH8M5 Data Sheet N-ch Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Parameter − 30 − 1.0 − − − 4.0 − − − − − − − − − − − − − − 21 30 33 − 520 150 95 9 21 36 13 7.2 1.8 2.8 ±10 − 1 2.5 30 42 47 − − − − − − − − − − − Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ RDS (on) Yfs ∗ Ciss Coss Crss td (on) ∗ tr ∗ td (off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ Unit μA V μA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=6.0A, VGS=10V ID=6.0A, VGS=4.5V ID=6.0A, VGS=4V ID=6.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3A, VDD 15V VGS=10V RL=5.0Ω RG=10Ω VDD 15V VGS=5V ID=6.0A ∗Pulsed Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS=6.4A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/5 2009.12 - Rev.A SH8M5 Data Sheet P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 − Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) −1.0 − ∗ Static drain-source on-state − RDS (on) resistance − 6.0 Yfs ∗ Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Crss Reverse transfer capacitance − td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − tf ∗ Fall time − Qg ∗ Total gate charge − Qgs ∗ Gate-source charge − Qgd ∗ Gate-drain charge Typ. Max. − − − − 20 25 30 − 2600 450 350 20 50 110 70 25 5.5 10 ±10 − −1 −2.5 28 35 42 − − − − − − − − − − − Unit μA V μA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −7.0A, VGS= −10V ID= −3.5A, VGS= −4.5V ID= −3.5A, VGS= −4.0V ID= −3.5A, VDS= −10V VDS= −10V VGS=0V f=1MHz ID= −3.5A, VDD −15V VGS= −10V RL=4.29Ω RG=10Ω VDD −15V VGS= −5V ID= −7.0A ∗Pulsed Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage Symbol VSD Min. − www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Typ. − Max. −1.2 Unit V Conditions IS=−1.6A, VGS=0V 3/5 2009.12 - Rev.A SH8M5 Data Sheet N-ch Electrical characteristic curves 1000 100 Coss Crss 10 0.01 0.1 1 10 td (off) tr 10 td (on) 1 0.01 100 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) 1 10 1 0.1 1 10 3 2 1 0 2 4 6 8 10 150 ID=6A ID=3A 50 0 0 2 4 6 8 10 12 14 1 VGS=0V Pulsed 0.01 0.0 16 100 VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 1 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 14 Fig.3 Dynamic Input Characteristics 10 100 12 TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 4 Ta=25°C Pulsed Fig.4 Typical Transfer Characteristics VGS=10V Pulsed 5 0 10 200 GATE-SOURCE VOLTAGE : VGS (V) 1000 6 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage VDS=10V Pulsed 1 Ta=25°C 9 VDD=15V ID=6A 8 RG=10Ω Pulsed 7 DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 10 GATE-SOURCE VOLTAGE : VGS (V) Ciss tf 100 SOURCE CURRENT : Is (A) 1000 10 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 10000 1000 100 VGS=4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 1 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/5 10 2009.12 - Rev.A SH8M5 Data Sheet P-ch Electrical characteristic curves 10000 Ciss 1000 Coss Crss 1 10 td (off) 100 tr td (on) 10 1 0.01 100 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : −ID (A) VDS= −10V Pulsed 0.001 0.0 2 1 0 0 5 150 100 ID=−7.0A 50 ID=−3.5A 0 10 10 15 20 10 0 2 4 6 8 10 12 1000 100 14 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 10 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.6 Source Current vs. Source-Drain Voltage 1000 100 10 0.1 VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5/5 30 0.1 0.01 0.0 16 VGS= −4.5V Pulsed 10 0.1 25 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 3 GATE-SOURCE VOLTAGE : −VGS (V) VGS= −10V Pulsed 1 0.1 4 Fig.3 Dynamic Input Characteristics Ta=25°C Pulsed Fig.4 Typical Transfer Characteristics 10 5 TOTAL GATE CHARGE : Qg (nC) 200 GATE-SOURCE VOLTAGE : −VGS (V) 100 6 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage 1 10 Ta=25°C VDD= −15V ID= −7A RG=10Ω Pulsed 7 DRAIN CURRENT : −ID (A) DRAIN-SOURCE VOLTAGE : −VDS (V) 10 1 SOURCE CURRENT : −IS (A) 0.1 tf STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 0.01 1000 8 Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : −VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 10000 10 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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