ROHM SH8M5

4V Drive Nch+Pch MOSFET
SH8M5
Dimensions (Unit : mm)
Structure
Silicon N-channel / P-channel MOSFET
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Each lead has same dimensions
Packaging specifications
Package
Type
Inner circuit
(8)
Taping
(7)
(6)
(5)
(8) (7) (6) (5)
TB
Code
Basic ordering unit (pieces)
2500
SH8M5
∗2
∗2
∗1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
VDSS
VGSS
ID
IDP∗1
IS
ISP∗1
PD∗2
Tch
Tstg
(1) (2) (3) (4)
Limits
Nchannel
Pchannel
30
−30
±20
±20
±6.0
±7.0
±24
±28
1.6
−1.6
24
−28
2
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
(1)
∗1
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 Pw≤10μs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a)∗
Limits
62.5
Unit
°C / W
∗MOUNTED ON A CERAMIC BOARD.
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1/5
2009.12 - Rev.A
SH8M5
Data Sheet
N-ch
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Parameter
−
30
−
1.0
−
−
−
4.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
21
30
33
−
520
150
95
9
21
36
13
7.2
1.8
2.8
±10
−
1
2.5
30
42
47
−
−
−
−
−
−
−
−
−
−
−
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
RDS (on)
Yfs ∗
Ciss
Coss
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
Unit
μA
V
μA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±20V, VDS=0V
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VDS=10V, ID=1mA
ID=6.0A, VGS=10V
ID=6.0A, VGS=4.5V
ID=6.0A, VGS=4V
ID=6.0A, VDS=10V
VDS=10V
VGS=0V
f=1MHz
ID=3A, VDD 15V
VGS=10V
RL=5.0Ω
RG=10Ω
VDD 15V
VGS=5V
ID=6.0A
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol
VSD
∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
IS=6.4A, VGS=0V
∗Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
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2/5
2009.12 - Rev.A
SH8M5
Data Sheet
P-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
IGSS
−
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS −30
−
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th) −1.0
−
∗
Static drain-source on-state
−
RDS (on)
resistance
−
6.0
Yfs ∗
Forward transfer admittance
−
Ciss
Input capacitance
−
Coss
Output capacitance
−
Crss
Reverse transfer capacitance
−
td (on) ∗
Turn-on delay time
−
tr ∗
Rise time
−
td (off) ∗
Turn-off delay time
−
tf ∗
Fall time
−
Qg ∗
Total gate charge
−
Qgs ∗
Gate-source charge
−
Qgd ∗
Gate-drain charge
Typ.
Max.
−
−
−
−
20
25
30
−
2600
450
350
20
50
110
70
25
5.5
10
±10
−
−1
−2.5
28
35
42
−
−
−
−
−
−
−
−
−
−
−
Unit
μA
V
μA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS= ±20V, VDS=0V
ID= −1mA, VGS=0V
VDS= −30V, VGS=0V
VDS= −10V, ID= −1mA
ID= −7.0A, VGS= −10V
ID= −3.5A, VGS= −4.5V
ID= −3.5A, VGS= −4.0V
ID= −3.5A, VDS= −10V
VDS= −10V
VGS=0V
f=1MHz
ID= −3.5A, VDD −15V
VGS= −10V
RL=4.29Ω
RG=10Ω
VDD −15V
VGS= −5V
ID= −7.0A
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol
VSD
Min.
−
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○
Typ.
−
Max.
−1.2
Unit
V
Conditions
IS=−1.6A, VGS=0V
3/5
2009.12 - Rev.A
SH8M5
Data Sheet
N-ch
Electrical characteristic curves
1000
100
Coss
Crss
10
0.01
0.1
1
10
td (off)
tr
10
td (on)
1
0.01
100
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : ID (A)
1
10
1
0.1
1
10
3
2
1
0
2
4
6
8
10
150
ID=6A
ID=3A
50
0
0
2
4
6
8
10
12
14
1
VGS=0V
Pulsed
0.01
0.0
16
100
VGS=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1
0.1
1
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
14
Fig.3 Dynamic Input Characteristics
10
100
12
TOTAL GATE CHARGE : Qg (nC)
GATE-SOURCE VOLTAGE : VGS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
4
Ta=25°C
Pulsed
Fig.4 Typical Transfer Characteristics
VGS=10V
Pulsed
5
0
10
200
GATE-SOURCE VOLTAGE : VGS (V)
1000
6
Fig.2 Switching Characteristics
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
VDS=10V
Pulsed
1
Ta=25°C
9 VDD=15V
ID=6A
8
RG=10Ω
Pulsed
7
DRAIN CURRENT : ID (A)
DRAIN-SOURCE VOLTAGE : VDS (V)
10
GATE-SOURCE VOLTAGE : VGS (V)
Ciss
tf
100
SOURCE CURRENT : Is (A)
1000
10
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
Fig.6 Source Current vs.
Source-Drain Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Ta=25°C
f=1MHz
VGS=0V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
10000
1000
100
VGS=4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1
0.1
1
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
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4/5
10
2009.12 - Rev.A
SH8M5
Data Sheet
P-ch
Electrical characteristic curves
10000
Ciss
1000
Coss
Crss
1
10
td (off)
100
tr
td (on)
10
1
0.01
100
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : −ID (A)
VDS= −10V
Pulsed
0.001
0.0
2
1
0
0
5
150
100
ID=−7.0A
50
ID=−3.5A
0
10
10
15
20
10
0
2
4
6
8
10
12
1000
100
14
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
10
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
100
10
0.1
VGS= −4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
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5/5
30
0.1
0.01
0.0
16
VGS= −4.5V
Pulsed
10
0.1
25
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
3
GATE-SOURCE VOLTAGE : −VGS (V)
VGS= −10V
Pulsed
1
0.1
4
Fig.3 Dynamic Input Characteristics
Ta=25°C
Pulsed
Fig.4 Typical Transfer Characteristics
10
5
TOTAL GATE CHARGE : Qg (nC)
200
GATE-SOURCE VOLTAGE : −VGS (V)
100
6
Fig.2 Switching Characteristics
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1
10
Ta=25°C
VDD= −15V
ID= −7A
RG=10Ω
Pulsed
7
DRAIN CURRENT : −ID (A)
DRAIN-SOURCE VOLTAGE : −VDS (V)
10
1
SOURCE CURRENT : −IS (A)
0.1
tf
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
100
0.01
1000
8
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : −VGS (V)
Ta=25°C
f=1MHz
VGS=0V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
10000
10
2009.12 - Rev.A
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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