4V Drive Nch + Pch MOSFET SH8M41 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 (8) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (7) (6) (2) (3) Application Switching Packaging specifications Type Package Code Basic ordering unit (pieces) SH8M41 Inner circuit Taping TB 2500 (8) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Symbol VDSS Gate-source voltage Source current (Body Diode) 80 20 20 V *1 3.4 13.6 2.6 10.4 A A 1.6 1.6 A *1 13.6 10.4 Is Pulsed Isp PD *2 Tch Tstg 2 150 55 to +150 ∗2 (6) (5) ∗2 ∗1 (1) ∗1 (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE V ID IDP Continuous Power dissipation Channel temperature Range of storage temperature 80 Unit VGSS Continuous Pulsed Drain current Limits Tr1 : N-ch Tr2 : P-ch (7) A W / TOTAL C C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Channel to Ambient Symbol Rth (ch-a)* Unit C / W Limits 62.5 *Mounted on a ceramic board. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/8 2010.07 - Rev.A SH8M41 Data Sheet Electrical characteristics (Ta = 25C) <Tr1(Nch)> Parameter Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V Gate-source leakage Drain-source breakdown voltage V (BR)DSS Conditions 80 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=80V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance * RDS (on) Forward transfer admittance l Yfs l* Input capacitance Ciss Zero gate voltage drain current - 90 130 ID=3.4A, VGS=10V - 110 150 m ID=3.4A, VGS=4.5V - 120 160 3 - - S VDS=10V, ID=3.4A - 600 - pF VDS=10V ID=3.4A, VGS=4.0V Output capacitance Coss - 100 - pF VGS=0V Reverse transfer capacitance Crss - 40 - pF f=1MHz Turn-on delay time td(on) * - 12 - ns ID=1.7A, VDD 40V tr * - 15 - ns VGS=10V td(off) * - 40 - ns RL=24 Rise time Turn-off delay time Fall time tf * - 12 - ns RG=10 Total gate charge Qg * - 6.6 9.2 nC ID=3.4A Gate-source charge Gate-drain charge Qgs * Qgd * - 1.8 2.2 - nC nC VDD 40V VGS=5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit Conditions V Is=6.4A, VGS=0V *Pulsed www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/8 2010.07 - Rev.A SH8M41 Data Sheet Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V Gate-source leakage Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current 80 IDSS Conditions - - V ID=1mA, VGS=0V - 1 A VDS=80V, VGS=0V - 2.5 V VDS=10V, ID=1mA Gate threshold voltage VGS (th) 1.0 Static drain-source on-state resistance * RDS (on) - 165 240 ID=2.6A, VGS=10V - 220 300 m ID=1.3A, VGS=4.5V - 230 310 Forward transfer admittance l Yfs l* 2 - - S ID=2.6A, VDS=10V Input capacitance Ciss - 1000 - pF VDS=10V ID=1.3A, VGS=4.0V Output capacitance Coss - 90 - pF VGS=0V Reverse transfer capacitance Crss - 40 - pF f=1MHz Turn-on delay time td(on) * - 14 - ns ID=1.3A, VDD 40V tr * - 12 - ns VGS=10V td(off) * - 60 - ns RL=31 Rise time Turn-off delay time Fall time tf * - 20 - ns RG=10 Total gate charge Qg * - 8.2 11.5 nC ID=2.6A Gate-source charge Gate-drain charge Qgs * Qgd * - 2.5 2.5 - nC nC VDD 40V VGS= 5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=1.6A, VGS=0V *Pulsed www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/8 2010.07 - Rev.A Data Sheet SH8M41 Electrical characteristic curves <Tr1(Nch)> 4 3 2 VGS= 2.6V 1 Ta=25°C Pulsed VGS= 2.4V 0 3 VGS= 2.6V 2 1 VGS= 2.4V 0.6 0.8 1 0 Ta=25°C Pulsed 100 VGS=10V VGS=4.5V VGS=4.0V 10 1 4 1000 6 8 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 10 1 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 10 VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current 4/8 3 4 1000 VGS= 4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 0.1 1 10 DRAIN-CURRENT : ID[A] 0.1 10 2 Fig.3 Typical Transfer Characteristics Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1 DRAIN-CURRENT : ID[A] VGS= 4.0V Pulsed 1 0 GATE-SOURCE VOLTAGE : VGS[V] 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 0.1 0.01 10 VGS= 10V Pulsed DRAIN-CURRENT : ID[A] 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 Fig.2 Typical Output Characteristics( Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Fig.1 Typical Output Characteristics( Ⅰ) 0.1 1 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] 1000 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.4 REVERSE DRAIN CURRENT : Is [A] 0.2 VDS= 10V Pulsed 0.001 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10 Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.0V DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.0V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 4 10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2010.07 - Rev.A Data Sheet Ta=25°C Pulsed 400 ID= 1.7A 300 ID= 3.4A 200 100 0 tf 10 tr 1 5 10 15 GATE-SOURCE VOLTAGE : VGS[V] Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 Ta=25°C VDD=40V VGS=10V RG=10Ω Pulsed 100 td(on) 0 CAPACITANCE : C [pF] td(off) 1000 GATE-SOURCE VOLTAGE : VGS [V] 10000 500 SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SH8M41 Fig.11 Switching Characteristics 10 10 8 6 4 Ta=25°C VDD=40V ID= 3.4A RG=10Ω Pulsed 2 0 0 2 4 6 8 10 12 14 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics Ciss 1000 100 Crss Coss 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/8 2010.07 - Rev.A Data Sheet SH8M41 Electrical characteristic curves <Tr2(Pch)> VGS= -10V VGS=- 4.5V VGS=- 4.0V 3 VGS= -3.0V 2 VGS= -2.6V 1 VGS= -2.4V 3 VGS= -4.0V VGS= -2.6V 2 1 VGS= -2.4V 0.4 0.6 0.8 1 0 DRAIN-SOURCE VOLTAGE : -VDS[V] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Fig.1 Typical Output Characteristics( Ⅰ) Ta= 25°C Pulsed 100 VGS=-10V VGS= -4.5V VGS= -4.0V 10 0.1 1 2 1000 8 0 10 VGS= -10V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 1 10 1000 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 3 4 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 VDS= -10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.01 0.1 1 DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current 6/8 10 DRAIN-CURRENT : -ID[A] 0.1 10 2 VGS= -4.5V Pulsed Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 6 DRAIN-CURRENT : -ID[A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 0.01 Fig.3 Typical Transfer Characteristics 10 1 0.1 Fig.2 Typical Output Characteristics( Ⅱ) 10 VGS= -4.0V Pulsed 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C GATE-SOURCE VOLTAGE : -VGS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 100 1 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-CURRENT : -ID[A] 1000 4 REVERSE DRAIN CURRENT : -Is [A] 0.2 VDS= -10V Pulsed 0.001 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0 10 Ta=25°C Pulsed VGS= -10V VGS= -4.5V DRAIN CURRENT : -ID[A] 4 Ta=25°C Pulsed DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 4 10 10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2010.07 - Rev.A Data Sheet 10000 Ta=25°C Pulsed 400 ID= -2.6A 300 ID= -1.3A 200 100 0 tf 10 tr 1 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 Ta=25°C VDD=-40V VGS=-10V RG=10Ω Pulsed 100 td(on) 0 CAPACITANCE : C [pF] td(off) 1000 GATE-SOURCE VOLTAGE : -VGS [V] 500 SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SH8M41 Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics 10 10 8 6 4 Ta=25°C VDD=-40V ID= -2.6A RG=10Ω Pulsed 2 0 0 2 4 6 8 10 12 14 16 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics Ciss 1000 100 Crss Coss 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 7/8 2010.07 - Rev.A SH8M41 Data Sheet Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr tf ton Fig.1-1 Switching time measurement circuit toff Fig.1-2 Switching waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate charge measurement circuit <Tr2(Pch)> Pulse Width VGS ID VDS VGS 10% 50% RL D.U.T. 90% 50% 10% RG VDD VDS 10% 90% td(on) ton Fig.1-1 Fig. 3-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Fig. 3-2 Switching Waveforms VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig. 4-1 Gate charge measurement circuit Fig.2-1 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Fig.2-2 Fig. 4-2 Gate Charge Waveform 8/8 2010.07 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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