1.5V Drive Pch MOSFET RP1A090ZP Structure Silicon P-channel MOSFET Dimensions (Unit : mm) MPT6 (Single) Features 1) Low Voltage Drive(1.5V drive). 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). (6) (5) (4) (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Code Basic ordering unit (pieces) RP1A090ZP Taping TR 1000 Type (6) (5) (4) ∗2 Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS −12 V Gate-source voltage VGSS ±10 V Drain current Source current (Body Diode) Continuous ID ±9 A Pulsed Continuous IDP IS *1 ±36 −1.6 A A Pulsed ISP *1 −36 A PD *2 2.0 W Tch Tstg 150 −55 to +150 °C °C Symbol Limits Unit 62.5 °C / W Power dissipation Channel temperature Range of storage temperature (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw≤10μs, Duty cycle≤1% *2 Mounted on a ceramic board. Thermal resistance Parameter Channel to Ambient Rth (ch-a)* *Mounted on a ceramic board. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.07 - Rev.B RP1A090ZP Data Sheet Electrical characteristics (Ta = 25°C) Parameter Symbol Typ. Max. Unit Conditions - - ±10 μA VGS=±10V, VDS=0V −12 - - V ID=−1mA, VGS=0V IDSS - - −1 μA VDS=−12V, VGS=0V VGS (th) −0.3 - −1.0 V VDS=−6V, ID=−1mA - 8 12 Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Min. Static drain-source on-state resistance * RDS (on) Forward transfer admittance l Yfs l* Input capacitance Ciss ID=−9A, VGS=−4.5V - 11 16 - 15 23 - 19 38 12 - - S ID=−9A, VDS=−6V - 7400 - pF VDS=−6V mΩ ID=−4.5A, VGS=−2.5V ID=−4.5A, VGS=−1.8V ID=−1.8A, VGS=−1.5V Output capacitance Coss - 800 - pF VGS=0V Reverse transfer capacitance Crss - 750 - pF f=1MHz Turn-on delay time td(on) * - 35 - ns ID=−4.5A, VDD −6V tr * - 120 - ns VGS=−4.5V td(off) * - 350 - ns RL=1.3Ω tf * - 170 - ns RG=10Ω Total gate charge Qg * - 59 - nC ID=−9A, Gate-source charge Gate-drain charge Qgs * Qgd * - 11 9 - nC nC VGS=−4.5V VDD −6V Rise time Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25°C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit Conditions - - −1.2 V Is=−9A, VGS=0V *Pulsed www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.07 - Rev.B Data Sheet RP1A090ZP Electrical characteristic curves 6 VGS= -1.2V VGS= -2.5V VGS= -1.8V VGS= -1.5V 5 4 3 2 1 10 8 VGS= -10V VGS= -4.5V 7 6 VGS= -2.5V VGS= -1.8V VGS= -1.5V 5 4 VGS= -1.0V 3 Ta=25°C Pulsed 1 VGS= -1.0V 0 0 0.2 0.4 0.6 0.8 1 0 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 10 1 0.1 1 10 0.001 0 10 0.5 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 100 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2 VGS= -2.5V Pulsed 10 1 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 100 0.1 1 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 1 10 100 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 3/5 100 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 100 VGS= -1.5V Pulsed 0.1 10 DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] 10 1.5 GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 100 1 Fig.3 Typical Transfer Characteristics 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 8 1 100 VGS= -1.8V Pulsed 10 6 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 1 4 VGS= -4.5V Pulsed DRAIN-CURRENT : -ID[A] 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 Fig.2 Typical output characteristics( Ⅱ) Fig.1 Typical output characteristics( Ⅰ) Ta=25°C Pulsed 1 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] 100 VDS= -6V Pulsed 0.01 2 0 100 VGS= -1.2V DRAIN CURRENT : -ID[A] 7 9 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] DRAIN CURRENT : -ID[A] Ta=25°C Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= -10V VGS= -4.5V 8 DRAIN CURRENT : -ID[A] 9 VDS= -6V Pulsed 10 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1 0.1 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2010.07 - Rev.B Data Sheet 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.001 0 0.5 100 80 70 ID= -9.0A 60 ID= -4.5A 50 40 30 20 4 3 Ta=25°C VDD= -6V ID= -9.0A RG=10Ω Pulsed 10 20 30 40 50 60 Ta=25°C VDD= -6V VGS=-4.5V RG=10Ω Pulsed td(on) tr 4 6 8 0.01 10 10000 1000 Coss 100 Crss Ta=25°C f=1MHz VGS=0V 10 70 0.01 TOTAL GATE CHARGE : Qg [nC] 0.1 1 10 100 1 10 100 Fig.12 Switching Characteristics 1000 Ciss 0.1 DRAIN-CURRENT : -ID[A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] 2 100000 0 10 GATE-SOURCE VOLTAGE : -VGS[V] 5 0 tf 1 0 Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 100 0 1 2 td(off) 1000 10 SOURCE-DRAIN VOLTAGE : -VSD [V] Operation in this area is limited by R DS(ON) (VGS=-4.5V) 100 PW =100us PW =1ms 10 PW = 10ms 1 0.1 0.01 DC operation Ta = 25°C Single Pulse MOUNTED ON CERAMIC BOARD 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage Fig.15 Maximum Safe Operating Aera Fig.13 Dynamic Input Characteristics NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10000 Ta=25°C Pulsed 90 SWITCHING TIME : t [ns] VGS=0V Pulsed DRAIN CURRENT : -ID (A) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : -Is [A] RP1A090ZP 10 1 0.1 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 62.5 °C/W <Mounted on a CERAMIC board> 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.16 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.07 - Rev.B RP1A090ZP Data Sheet Measurement circuits Pulse Width VGS ID VDS VGS 10% 50% 90% RL 50% 10% D.U.T. 10% RG VDD VDS 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.07 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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