ROHM RP1A090ZP

1.5V Drive Pch MOSFET
RP1A090ZP
 Structure
Silicon P-channel MOSFET
 Dimensions (Unit : mm)
MPT6
(Single)
Features
1) Low Voltage Drive(1.5V drive).
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
(6)
(5)
(4)
(1)
(2)
(3)
 Application
Switching
 Packaging specifications
 Inner circuit
Package
Code
Basic ordering unit (pieces)
RP1A090ZP
Taping
TR
1000

Type
(6)
(5)
(4)
∗2
 Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−12
V
Gate-source voltage
VGSS
±10
V
Drain current
Source current
(Body Diode)
Continuous
ID
±9
A
Pulsed
Continuous
IDP
IS
*1
±36
−1.6
A
A
Pulsed
ISP
*1
−36
A
PD
*2
2.0
W
Tch
Tstg
150
−55 to +150
°C
°C
Symbol
Limits
Unit
62.5
°C / W
Power dissipation
Channel temperature
Range of storage temperature
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw≤10μs, Duty cycle≤1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
*Mounted on a ceramic board.
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.07 - Rev.B
RP1A090ZP
Data Sheet
 Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Typ.
Max.
Unit
Conditions
-
-
±10
μA
VGS=±10V, VDS=0V
−12
-
-
V
ID=−1mA, VGS=0V
IDSS
-
-
−1
μA
VDS=−12V, VGS=0V
VGS (th)
−0.3
-
−1.0
V
VDS=−6V, ID=−1mA
-
8
12
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Min.
Static drain-source on-state
resistance
*
RDS (on)
Forward transfer admittance
l Yfs l*
Input capacitance
Ciss
ID=−9A, VGS=−4.5V
-
11
16
-
15
23
-
19
38
12
-
-
S
ID=−9A, VDS=−6V
-
7400
-
pF
VDS=−6V
mΩ
ID=−4.5A, VGS=−2.5V
ID=−4.5A, VGS=−1.8V
ID=−1.8A, VGS=−1.5V
Output capacitance
Coss
-
800
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
750
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
35
-
ns
ID=−4.5A, VDD −6V
tr *
-
120
-
ns
VGS=−4.5V
td(off) *
-
350
-
ns
RL=1.3Ω
tf *
-
170
-
ns
RG=10Ω
Total gate charge
Qg *
-
59
-
nC
ID=−9A,
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
11
9
-
nC
nC
VGS=−4.5V
VDD −6V
Rise time
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25°C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
Conditions
-
-
−1.2
V
Is=−9A, VGS=0V
*Pulsed
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©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.07 - Rev.B
Data Sheet
RP1A090ZP
 Electrical characteristic curves
6
VGS= -1.2V
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
5
4
3
2
1
10
8
VGS= -10V
VGS= -4.5V
7
6
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
5
4
VGS= -1.0V
3
Ta=25°C
Pulsed
1
VGS= -1.0V
0
0
0.2
0.4
0.6
0.8
1
0
2
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
100
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
10
1
0.1
1
10
0.001
0
10
0.5
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
100
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
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©2010 ROHM Co., Ltd. All rights reserved.
2
VGS= -2.5V
Pulsed
10
1
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
100
0.1
1
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
1
10
100
DRAIN-CURRENT : -ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)
3/5
100
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
100
VGS= -1.5V
Pulsed
0.1
10
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
10
1.5
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)
100
1
Fig.3 Typical Transfer Characteristics
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
8
1
100
VGS= -1.8V
Pulsed
10
6
10
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)
1
4
VGS= -4.5V
Pulsed
DRAIN-CURRENT : -ID[A]
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
Fig.2 Typical output characteristics( Ⅱ)
Fig.1 Typical output characteristics( Ⅰ)
Ta=25°C
Pulsed
1
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
100
VDS= -6V
Pulsed
0.01
2
0
100
VGS= -1.2V
DRAIN CURRENT : -ID[A]
7
9
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
DRAIN CURRENT : -ID[A]
Ta=25°C
Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs|
[S]
VGS= -10V
VGS= -4.5V
8
DRAIN CURRENT : -ID[A]
9
VDS= -6V
Pulsed
10
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
0.1
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
2010.07 - Rev.B
Data Sheet
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.001
0
0.5
100
80
70
ID= -9.0A
60
ID= -4.5A
50
40
30
20
4
3
Ta=25°C
VDD= -6V
ID= -9.0A
RG=10Ω
Pulsed
10
20
30
40
50
60
Ta=25°C
VDD= -6V
VGS=-4.5V
RG=10Ω
Pulsed
td(on)
tr
4
6
8
0.01
10
10000
1000
Coss
100
Crss
Ta=25°C
f=1MHz
VGS=0V
10
70
0.01
TOTAL GATE CHARGE : Qg [nC]
0.1
1
10
100
1
10
100
Fig.12 Switching Characteristics
1000
Ciss
0.1
DRAIN-CURRENT : -ID[A]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
CAPACITANCE : C [pF]
GATE-SOURCE VOLTAGE : -VGS [V]
2
100000
0
10
GATE-SOURCE VOLTAGE : -VGS[V]
5
0
tf
1
0
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
1
100
0
1
2
td(off)
1000
10
SOURCE-DRAIN VOLTAGE : -VSD [V]
Operation in this area is limited by R DS(ON)
(VGS=-4.5V)
100
PW =100us
PW =1ms
10
PW = 10ms
1
0.1
0.01
DC operation
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.15 Maximum Safe Operating Aera
Fig.13 Dynamic Input Characteristics
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10000
Ta=25°C
Pulsed
90
SWITCHING TIME : t [ns]
VGS=0V
Pulsed
DRAIN CURRENT : -ID (A)
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
REVERSE DRAIN CURRENT : -Is
[A]
RP1A090ZP
10
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a CERAMIC board>
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.16 Normalized Transient Thermal Resistance vs. Pulse Width
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.07 - Rev.B
RP1A090ZP
Data Sheet
 Measurement circuits
Pulse Width
VGS
ID
VDS
VGS
10%
50%
90%
RL
50%
10%
D.U.T.
10%
RG
VDD
VDS
90%
td(on)
tr
ton
90%
td(off)
tf
toff
Fig.1-2 Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
VG
ID
VDS
VGS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.07 - Rev.B
Notice
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R1010A