Si2335DS New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.051 @ VGS = –4.5 V –4.0 0.070 @ VGS = –2.5 V –3.5 0.106 @ VGS = –1.8 V –3.0 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2335DS (E5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS –12 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150_C) _ a, b TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b TA = 70_C Operating Junction and Storage Temperature Range PD –3.2 –3.3 –2.6 A –15 IS TA = 25_C V –4.0 IDM Unit –1.6 1.25 0.75 0.8 0.48 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71314 S-02303—Rev. A, 23-Oct-00 www.vishay.com 1 Si2335DS New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS = 0 V, ID = –10 mA –12 VGS(th) VDS = VGS, ID = –250 mA –0.45 Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea rDS(on) Forward Transconductancea Diode Forward Voltage V VDS = 0 V, VGS = 8 V 100 VDS = –9.6 V, VGS = 0 V –1 VDS = –9.6 V, VGS = 0 V, TJ = 55_C –10 VDS –5 V, VGS = –4.5 V –15 VDS –5 V, VGS = –2.5 V –6 nA m mA A VGS = –4.5 V, ID = –4.0 A 0.042 0.051 VGS = –2.5 V, ID = –3.5 A 0.058 0.070 0.106 VGS = –1.8 V, ID = –2.0 A 0.082 gfs VDS = –5 V, ID = –4.0 A 7 VSD IS = –1.6 A, VGS = 0 V W S –1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 9 VDS = –6 V, VGS = –4.5 V ID –4.0 A 15 1.9 nC 1.5 1225 VDS = –6 V, VGS = 0, f = 1 MHz 260 pF 130 Switchingc td(on) Turn-On Time Turn-Off Time tr td(off) VDD = –6 V, RL = 6 W ID –1.0 A, VGEN = –4.5 V RG = 6 W tf 13.0 20 15 25 50 70 19 35 ns Notes a. Pulse test: PW 300 ms duty cycle 2%. b. c. For DESIGN AID ONLY, not subject to production testing. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 71314 S-02303—Rev. A, 23-Oct-00 Si2335DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 15 15 VGS = 4.5 thru 2.5 V TC = –55_C 12 I D – Drain Current (A) I D – Drain Current (A) 12 2V 9 6 1.5 V 3 25_C 9 125_C 6 3 1, 0.5 V 0 0 2 4 6 8 0 0.0 10 0.5 VDS – Drain-to-Source Voltage (V) 1.0 2.0 2.5 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 2000 0.30 0.25 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 1.5 0.20 VGS = 1.8 V 0.15 0.10 VGS = 2.5 V 1500 Ciss 1000 500 Coss 0.05 VGS = 4.5 V 0.00 Crss 0 0 3 6 9 12 15 0 3 ID – Drain Current (A) 9 12 VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 8 1.6 VDS = 6 V ID = 4.0 A r DS(on) – On-Resistance ( W) (Normalized) V GS – Gate-to-Source Voltage (V) 6 6 4 2 0 0 5 10 15 Qg – Total Gate Charge (nC) Document Number: 71314 S-02303—Rev. A, 23-Oct-00 20 1.4 VGS = 4.5 V ID = 4.0 A 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si2335DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 20 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 10 TJ = 150_C TJ = 25_C 1 0.4 ID = 4.0 A 0.3 0.2 0.1 0.0 0.1 0.0 0.2 0.4 0.6 1.0 0.8 0 1.2 VSD – Source-to-Drain Voltage (V) 2 6 8 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 12 ID = 250 mA 0.3 10 8 0.2 Power (W) V GS(th) Variance (V) 4 0.1 6 0.0 4 –0.1 2 TA = 25_C –0.2 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 TJ – Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120_C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71314 S-02303—Rev. A, 23-Oct-00