Si4378DY New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0027 @ VGS = 4.5 V 25 0.0042 @ VGS = 2.5 V 22 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D 100% Rg Tested APPLICATIONS D Synchronous Rectification D Point-Of-Load D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4378DY—E3 Si4378DY-T1—E3 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Continuous Source Current (Diode Conduction)a IS L = 0.1 mH TA = 25_C Maximum Power Dissipationa TA = 70_C 19 20 13 Operating Junction and Storage Temperature Range 70 A 2.9 IAS PD V 25 IDM Pulsed Drain Current (10 ms Pulse Width) Avalanche Current ID Unit 1.3 40 3.5 1.6 2.2 1 TJ, Tstg −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72918 S-40854—Rev. A, 03-May-04 www.vishay.com 1 Si4378DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS Typ Max Unit 1.8 V VDS = 0 V, VGS = "12 V "100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 30 VDS w 5 V, VGS = 4.5 V rDS(on) mA A VGS = 4.5 V, ID = 25 A 0.0022 0.0027 VGS = 2.5 V, ID = 22 A 0.0034 0.0042 gfs VDS = 10 V, ID = 25 A 150 VSD IS = 2.9 A, VGS = 0 V 0.72 W S 1.1 V Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 650 Total Gate Charge Qg 55 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance 8500 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 25 A 10 0.8 td(on) Rise Time tr Turn-Off Delay Time VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 16 Rg Turn-On Delay Time pF 1250 IF = 2.9 A, di/dt = 100 A/ms 1.3 2.0 85 130 65 100 140 210 50 80 50 80 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 50 40 40 I D − Drain Current (A) I D − Drain Current (A) VGS = 5 thru 2.5 V 50 30 20 2V 10 30 20 TC = 125_C 10 25_C −55_C 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Document Number: 72918 S-40854—Rev. A, 03-May-04 Si4378DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.006 Capacitance 10000 0.005 8000 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) Ciss VGS = 2.5 V 0.004 0.003 VGS = 4.5 V 0.002 6000 4000 0.000 0 0 10 20 30 40 50 0 60 4 Gate Charge VDS = 10 V ID = 25 A 5 12 16 20 On-Resistance vs. Junction Temperature 1.8 VGS = 4.5 V ID = 25 A 1.6 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 6 8 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 4 3 2 1 1.4 1.2 1.0 0.8 0 0 10 20 30 40 50 60 0.6 −50 70 −25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.015 r DS(on) − On-Resistance ( W ) 50 TJ = 150_C 10 TJ = 25_C 0.012 ID = 25 A 0.009 0.006 0.003 0.000 1 0.00 25 TJ − Junction Temperature (_C) Qg − Total Gate Charge (nC) I S − Source Current (A) Crss Coss 2000 0.001 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) Document Number: 72918 S-40854—Rev. A, 03-May-04 1.0 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4378DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 60 ID = 250 mA 50 40 −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 30 −0.4 20 −0.6 10 −0.8 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 10 ms 100 ms 1 1s 10 s 0.1 TC = 25_C Single Pulse dc 0.01 10 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72918 S-40854—Rev. A, 03-May-04 Si4378DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72918 S-40854—Rev. A, 03-May-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5