Si2328DS New Product Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2328DS (D8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS 100 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA= 25_C TA= 70_C Pulsed Drain Currentb L = 0.1 mH Single Avalanche Energy Continuous Source Current (Diode Conduction)a TA= 25_C Power Dissipationa TA= 70_C Operating Junction and Storage Temperature Range 1.15 1.2 IDM Avalanche Currentb V 1.5 ID Unit 0.92 A 6 IAS 6 EAS 1.8 mJ IS 0.6 A PD 1.25 0.73 0.80 0.47 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot Steady State Steady State RthJA RthJF Typical Maximum 80 100 130 170 45 55 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71796 S-05372—Rev. A, 25-Dec-01 www.vishay.com 1 Si2328DS New Product Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = 1 mA 100 VGS(th) VDS = VGS, ID = 250 mA 2 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V "100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 70_C 75 ID(on) VDS w 15 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 1.5 A gfs VDS = 15 V, ID = 1.5 A 4 VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 3.3 4.0 6 nA m mA A 0.195 0.250 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.47 1.45 td(on) 7 11 11 17 9 15 10 15 50 100 VDS = 50 V, VGS = 10 V, ID = 1.5 A nC Switching Turn-On Delay Time Rise Time tr Turn-Off Delay Time VDD = 50 V, RL = 33 W ID ^ 0.2 A, VGEN = 10 V, RG = 6 W td(off) Fall-Time tf Source-Drain Reverse Recovery Time trr IF = 1.5 A, di/dt = 100 A/ms ns ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 12 12 7V VGS = 10, 9, 8 V 9 I D – Drain Current (A) I D – Drain Current (A) 9 6V 6 5V 3 6 TC = 125_C 3 25_C 3, 2, 1 V –55_C 4V 0 0 0 2 4 6 8 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 10 0 2 4 6 8 VGS – Gate-to-Source Voltage (V) Document Number: 71796 S-05372—Rev. A, 25-Dec-01 Si2328DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 250 0.5 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 0.6 0.4 VGS = 10 V 0.3 0.2 200 Ciss 150 100 50 0.1 0.0 Coss Crss 0 0 3 6 9 0 12 20 ID – Drain Current (A) Gate Charge 80 100 On-Resistance vs. Junction Temperature 2.5 VDS = 10 V ID = 1.5 A r DS(on) – On-Resistance ( W) (Normalized) V GS – Gate-to-Source Voltage (V) 60 VDS – Drain-to-Source Voltage (V) 20 16 12 8 4 VGS = 10 V ID = 1.5 A 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 0.0 –50 6 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 r DS(on) – On-Resistance ( W ) 10 I S – Source Current (A) 40 TJ = 150_C 1 0.1 TJ = 25_C 0.5 ID = 1.5 A 0.4 0.3 0.2 0.1 0.01 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71796 S-05372—Rev. A, 25-Dec-01 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si2328DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 12 0.3 10 ID = 250 mA 0.0 Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 –0.3 8 TA = 25_C 6 –0.6 4 –0.9 2 –1.2 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (sec) TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 176_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71796 S-05372—Rev. A, 25-Dec-01