New Product Si7141DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0019 at VGS = - 10 V - 60d 0.0030 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 128 nC PowerPAK SO-8 S APPLICATIONS S 6.15 mm 5.15 mm 1 • Adaptor Switch • Battery Switch • Load Switch S 2 S 3 G 4 G D 8 D 7 D 6 D 5 D Bottom View Ordering Information: Si7141DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 20 ± 20 - 60d - 42.7b - 34b - 100 - 60d ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD - 5.6a, b - 40 80 104 66.6 6.25a, b 4.0a, b - 55 to 150 260 TJ, Tstg Operating Junction and Storage Temperature Range V 60d IDM Pulsed Drain Current Unit Soldering Recommendations (Peak Temperature)e, f A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Case t ≤ 10 s Steady State Symbol RthJA RthJC Typical 15 0.9 Maximum 20 1.2 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 54 °C/W. d. Package limited. e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65596 S10-0042-Rev. A, 11-Jan-10 www.vishay.com 1 New Product Si7141DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C 5.7 - 1.0 - 2.3 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C -5 VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 25 A - 40 0.0019 VGS = - 4.5 V, ID = - 20 A 0.0024 0.0030 VDS = - 10 V, ID = - 25 A 103 14 300 VDS = - 10 V, VGS = 0 V, f = 1 MHz 2300 pF 2600 VDS = - 10 V, VGS = - 10 V, ID = - 20 A VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A 265 400 128 194 36 nC 42 f = 1 MHz VDD = - 10 V, RL = 1 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 0.4 1.7 3.4 25 50 16 30 130 220 tf 38 70 130 220 120 200 tr Ω S td(on) td(off) µA A 0.0015 td(on) td(off) V - 16 VDD = - 10 V, RL = 1 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω tf 100 180 55 100 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 60 - 100 IS = - 5 A, VGS = 0 V IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.71 - 1.1 V 42 80 ns 36 72 nC 18 24 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65596 S10-0042-Rev. A, 11-Jan-10 New Product Si7141DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 100 VGS = 10 V thru 4 V 8 60 I D - Drain Current (A) I D - Drain Current (A) 80 VGS = 3 V 40 6 4 TC = 25 °C 2 20 TC = 125 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 0 2.5 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0030 18 000 0.0026 14 400 5 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 0.0022 0.0018 VGS = 10 V 10 800 7200 Coss 0.0014 3600 Crss 0.0010 0 0 14 28 42 56 70 0 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 1.5 10 ID = 20 A ID = 25 A 8 VDS = 10 V 6 VDS = 5 V VDS = 15 V 4 1.3 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1.1 VGS = 4.5 V 0.9 2 0 0 60 120 180 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65596 S10-0042-Rev. A, 11-Jan-10 240 300 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si7141DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.010 10 0.008 1 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 25 A TJ = 150 °C TJ = 25 °C 0.1 0.01 0.006 0.004 TJ = 125 °C 0.002 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 10 200 0.6 160 ID = 250 µA 0.4 ID = 5 mA Power (W) VGS(th) Variance (V) 1 0.2 120 80 0.0 40 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 1 ms 10 I D - Drain Current (A) 0.01 10 ms 100 ms 1 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 65596 S10-0042-Rev. A, 11-Jan-10 New Product Si7141DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 I D - Drain Current (A) 160 120 80 Package Limited 40 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 125 3.0 100 2.4 75 1.8 Power (W) Power (W) Current Derating* 50 25 1.2 0.6 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65596 S10-0042-Rev. A, 11-Jan-10 www.vishay.com 5 New Product Si7141DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 54 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65596. www.vishay.com 6 Document Number: 65596 S10-0042-Rev. A, 11-Jan-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1