SK 60 GB 128 Absolute Maximum Ratings Symbol Conditions IGBT '/" '2/" ) ): $ % +, -. Values $ % +, 41 -5 ; 0 5 $ % +, 41 -5 $= Units 0+11 3 +1 67 88 071 <1 ' ' 9 9 & 81 >>> ? 0,1 - ,A 74 008 74 9 9 & 81 >>> ? 0,1 - Inverse/Freewheeling CAL diode ® SEMITOP 3 IGBT Module SK 60 GB 128 Target Data Features ! "#$%"&# &$ ! ' ( Typical Applications " )( " *#" )@ )@: % & ): $ % +, 41 -5 ; 0 5 $ % +, 41 -5 $= $ $ $. 01 & 81 >>> ? 0+, +61 - - ' 9 ,1 B. >>> 0 > C 0 +,11 C 7111 ' Characteristics Symbol Conditions IGBT '/ '2/ D=& ) % 81 9. $= % +, 0+, - '/ % '2/5 ) % 1.11+ 9 '/ % +, '5 '2/ % 1 '5 0 :B )2$ $ % +, -. min. 8., typ. 0.4 0.<8 ,., 8., max. 6., 1.6 / ? / ' ' @ ECF ECF G ' % 611 ' . '2/ % 3 0, ' ) % ,1 9. $= % 0+, - D2 % D2 % 0, H Units ) ( 41 ,1 8+1 81 01.8 I Inverse/Freewheeling CAL diode '@ % '/ '$ $ )@ % ,1 95 $= % +, 0+, - $= % 0+, - $= % 0+, - + 0.4 0 06 D=& 0.+ ++ ' ' H 1.< ECF )DD: J G )@ % ,1 95 'D % 611 ' )@C % &411 9CK 81 4 9 K / '2/ % 1 '5 $= % 0+, - + I Mechanical data :0 L +., +< "/:)$#N 7 M $ +A GB 1 19-10-2005 RAM © by SEMIKRON SK 60 GB 128 Fig.5 Typ. output characteristic, tp = 250 µs, 25 °C Fig.6 Typ. output characteristic, tp = 25 µs, 125 °C Fig.7 Turn-on / -off energy = f (IC) Fig.8 Turn-on / -off energy = f (RG) Fig.9 Typ. gate charge characteristic 2 19-10-2005 RAM © by SEMIKRON SK 60 GB 128 Fig.11 Typ. switching times vs. IC Fig.12 Typ. switching times vs. gate resistor RG Fig.13 Typ. CAL Diode peak reverse recovery current Fig. 14 Typ. CAL Diode forward characteristic 3 19-10-2005 RAM © by SEMIKRON SK 60 GB 128 UL Recognized File no. E 63532 Dimensions in mm $+A 2 "*22/"$/ O/)9:/$/D @D $/ "O/D #)M" 9M $/ :*M$)M2 #)M" )M $/ #G + $+A This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 19-10-2005 RAM © by SEMIKRON