SK 70 GAL 063
Absolute Maximum Ratings
Symbol Conditions
IGBT
./#
.2/#
$
$9
( ) *+ ,- Values
( ) *+ 41 ,5
: 6 5 ( ) *+ 41 ,5
(<
Units
011
3 *1
46 +7
60* 66;
.
.
8
8
= ;1 >>> ? 6+1
,
7A +B
6+4 610
8
8
= ;1 >>> ? 6+1
,
Freewheeling CAL diode
®
SEMITOP 2
IGBT Module
SK 70 GAR 063
SK 70 GAL 063
Preliminary Data
Features
!
" Typical Applications
#
$%
#
&'#
$@
$@9 ) = $9
( ) *+ 41 ,5
: 6 5 ( ) *+ 41 ,5
(<
(
(
(- 61 = ;1 >>> ? 6*+
*01
,
,
.
8 C- >>> 6 > D 6 *+11 D B111
.
Characteristics
Symbol Conditions
IGBT
./
.2/
E<=
$ ) 01 8- (< ) *+ 6*+ ,
./ ) .2/5 $ ) 8
./ ) *+ .5 .2/ ) 1 .5 6 9C
$2(
( ) *+ ,- min.
;-+
typ.
6-4 6-A
+-+
+-0
max.
0-+
1-0
/ ? /
.
.
@
FDG
FDG
H
. ) B11 . - .2/ ) 3 6+ .
$ ) 01 8- (< ) 6*+ ,
E2 ) E2 ) 61 I
Units
$
% ;+
B1
B11
B+
;-7
J
Freewheeling CAL diode
.@ ) ./
.(
(
$@ ) 01 85 (< ) *+ 6*+ ,
(< ) 6*+ ,
(< ) 6*+ ,
6-; 6-B
1-4+
0-+
E<=
1-A
66
.
.
I
1-A
FDG
$EE9
K
H
$@ ) 01 85 .E ) B11 .
$@D ) =B111 8DL
A1
7
8
L
/
.2/ ) 1 .5 (< ) 6*+ ,
6-*
J
Mechanical data
96
M
GAL
1
*
6A
#/9$('O
*
N
( 64
GAR
20-10-2005 RAM
© by SEMIKRON
SK 70 GAL 063
Fig.5 Typ. output characteristic, tp = 250 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 25 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. VCE
2
20-10-2005 RAM
© by SEMIKRON
SK 70 GAL 063
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig.13 Diode turn-off energy dissipation per pulse
3
20-10-2005 RAM
© by SEMIKRON
SK 70 GAL 063
UL Recognized
File no. E 63532
Dimensions in mm
(64
28"
(64
28E
#&22/#(/ "/$89/(/E @E (/ #"/E '$N# 8N (/ 9&N($N2 '$N# $N (/
'H * (64
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
20-10-2005 RAM
© by SEMIKRON