SMK1060P Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=18pF(Typ.) • Low gate charge : Qg=35nc(Typ.) • Low RDS(on) :RDS(on)=0.75Ω(Max.) D G Ordering Information Type No. Marking Package Code SMK1060P SMK1060 TO-220AB-3L GDS S TO-220AB-3L Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V (Tc=25℃) 10 A (Tc=100℃) 6.32 A Drain current (DC)* ID Drain current (Pulsed)* IDM 40 A Drain power dissipation PD 120 W Avalanche current (Single) ② IAS 10 A Single pulsed avalanche energy ② EAS 490 mJ Avalanche current (Repetitive) ① IAR 10 A Repetitive avalanche energy ① EAR 11.6 mJ TJ 150 Tstg -55~150 Junction temperature Storage temperature range °C * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 1.04 Junction-ambient Rth(J-a) - 62.5 KSD-T0P023-000 Unit ℃/W 1 SMK1060P Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250μA, VGS=0 600 - - V Gate threshold voltage VGS(th) ID=250μA, VDS= VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=600V, VGS=0V - - 1 μA Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-source on-resistance ④ RDS(ON) VGS=10V, ID=5.0A - 0.60 0.75 Ω Forward transfer conductance ④ gfs VDS=10V, ID=5.0A - 8.0 - S - 2000 2350 - 160 215 - 18 - - 23 - - 69 - - 144 - - 77 - - 35 57 - 9.0 - - 10 - Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VGS=0V, VDS=25V f=1MHz VDD=300V, ID=10A RG=25Ω ③④ VDS=480V, VGS=10V ID=10A ③④ pF ns nC Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Source current (DC) IS Test Condition Min Typ Max - - 10 - - 40 Unit Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=10A - - 1.4 V Reverse recovery time trr - 470 - ns Reverse recovery charge Qrr Is=10A, VGS=0, diS/dt=100A/ us - 6 - uC A Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=10mH, IAS=9.5A, VDD=50V, RG=25Ω , Starting TJ = 25℃ ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T0P023-000 2 SMK1060P Electrical Characteristic Curves Fig. 2 ID - VGS Fig. 1 ID - VDS ℃ - Fig. 4 IS - VSD Fig. 3 RDS(on) - ID ℃ Fig. 5 Capacitance - VDS Fig.6 VGS - QG ℃ KSD-T0P023-000 3 SMK1060P Electrical Characteristic Curves Fig.8 RDS(on) - TJ Fig. 7 VDSS - TJ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area * KSD-T0P023-000 4 SMK1060P Fig. 10 Gate Charge Test Circuit & Waveform Fig. 11 Resistive Switching Test Circuit & Waveform Fig. 12 EAS Test Circuit & Waveform KSD-T0P023-000 5 SMK1060P Fig. 13 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T0P023-000 6 SMK1060P Outline Dimension KSD-T0P023-000 7 SMK1060P The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0P023-000 8