STMICROELECTRONICS SMP100-8

SMP100-xxx

COMMUNICATION EQUIPMENT PROTECTION: TRISIL TM
FEATURES
BIDIRECTIONAL CROWBAR PROTECTION
VOLTAGE RANGE : FROM 8V to 270V
REPETITIVE PEAK PULSE CURRENT:
IPP = 100 A (10/1000 µs)
HOLDING CURRENT: IH = 150mA or 225mA
LOW LEAKAGE CURRENT: IR = 2 µA max
DESCRIPTION
The SMP100 series are transient surge arrestors used for the protection of sensitive telecom equipment.
SMB
(JEDEC DO-214AA)
MAIN APPLICATIONS
Any sensitive equipment requiring protection
against lightning strikes :
ANALOG AND DIGITAL LINE CARDS
MAIN DISTRIBUTION FRAMES
TERMINALS AND TRANSMISSION
EQUIPMENT
GAS-TUBE REPLACEMENT
SCHEMATIC DIAGRAM
BENEFITS
NO AGEING AND NO NOISE
IF DESTROYED, THE SMP100 FALLS INTO
SHORT CIRCUIT,STILLENSURINGPROTECTION
BOARD SPACE SAVING
Peak Surge
Voltage
(V)
Voltage
Waveform
(µs)
Current
Waveform
(µs)
Admissible
Ipp
(A)
Necessary
Resistor
(Ω)
ITU K20
4000
10/700
5/310
100
-
VDE0433
VDE0878
4000
10/700
5/310
100
-
4000
1.2/50
1/20
100
-
IEC-1000-4-5
level 4
level 4
10/700
1.2/50
5/310
8/20
100
100
-
FCC Part 68, lightning surge
type A
1500
800
10/160
10/560
10/160
10/560
200
100
-
FCC Part 68, lightning surge
type B
100
9/720
5/320
25
-
BELLCORE TR-NWT-001089
First level
2500
1000
2/10
10/1000
2/10
10/1000
500
100
-
BELLCORE TR-NWT-001089
Second level
5000
2/10
2/10
500
-
CNET l31-24
4000
0.5/700
0.8/310
100
-
COMPLIES WITH THE
FOLLOWING STANDARDS:
August 1999 - Ed : 8A
1/9
SMP100-xxx
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-I)
Junction to leads
20
°C/W
Rth(j-a)
Junction to ambient on printed circuit
(with standard footprint dimensions)
100
°C/W
Value
Unit
100
150
250
500
A
A
A
A
8/20 µs
5
kA
Non repetitive surge peak on-state current
One cycle
50Hz
60Hz
55
60
A
A
Non repetitive surge peak on-state current
F = 50Hz
0.2s
2s
25
12
A
A
260
°C
- 55 to + 150
150
°C
°C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Peak pulse current:
10/1000 µs (open circuit voltage waveform 1 kV 10/1000 µs)
5/310µs
(open circuit voltage waveform 4 kV, 10/700µs)
8/20 µs
(open circuit voltage waveform 4 kV 1.2/50 µs)
2/10 µs
(open circuit voltage waveform 2.5kV 2/10 µs)
Ipp
IFS
Fail-safe mode
ITSM
TL
Maximum lead temperature for soldering during 10s
Tstg
Tj
Storage temperature range
Maximum junction temperature
Note 1: Pulse waveform
10 / 1000 µs
8 / 20 µs
5 / 310 µs
1 / 20 µs
2 / 10 µs
2/9
tr = 10 µs
tr = 8 µs
tr = 5 µs
tr = 1 µs
tr = 2 µs
% IPP
tp = 1000 µs
tp = 20 µs
tp = 310 µs
tp = 20 µs
tp = 10 µs
100
50
0
tr
tp
t
SMP100-xxx
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
VRM
Stand-off voltage
IRM
VR
Leakage current at stand-off voltage
IR
VBR
VBO
Continuous reverse voltage
Continuous reverse current
Breakdown voltage
Breakover voltage
IH
Holding current
IBO
IPP
Breakover current
Peak pulse current
C
Capacitance
STATIC PARAMETERS
Type
IRM @ VRM
max.
IR @ VR
max.
note 1
VBO @ IBO
max.
note 2
IH
min.
note 3
C
typ.
note 4
µA
V
µA
V
V
mA
mA
pF
SMP100-8
SMP100LC-35
2
2
6
32
50
50
8
35
20
55
800
800
50(typ)
150
100
90
SMP100-65
2
55
50
65
80
800
150
160
SMP100-120
2
110
50
120
160
800
150
140
SMP100-140
2
120
50
140
200
800
150
140
SMP100-200
SMP100-230
2
2
170
200
50
50
200
230
265
300
800
800
150
150
130
120
SMP100-270
2
230
50
270
350
800
150
120
SMP100-140H225
SMP100-200H225
2
2
120
170
50
50
140
200
200
265
800
800
225
225
140
130
SMP100-230H225
2
200
50
230
300
800
225
130
SMP100-270H225
2
230
50
270
350
800
225
120
Note 1 : IR measured at VR guarantees VBR>VR
Note 2 : Measured at 50Hz, see test circuit 1. In any case V BOmin ≥ VBR
Note 3 : See functional holding current test circuit 2.
Note 4 : VR=1V bias, VRMS=1V, F=1MHz.
3/9
SMP100-xxx
DYNAMIC PARAMETERS
Symbol
Test conditions (see note 5)
Type
Max.
SMP100-8
25
SMP100LC-35
55
SMP100-65
SMP100-120
95
200
SMP100-140
220
SMP100-200
SMP100-230
285
320
SMP100-270
SMP100-140H225
370
220
SMP100-200H225
SMP100-230H225
285
320
SMP100-270H225
370
Test conditions 1
dV/dt = 100 V/µs, di/dt < 10 A/µs, IPP = 100 A
VBO
Test conditions 2
dV/dt = 1 kV/µs, di/dt < 10 A/µs, IPP = 10 A
Note 5 : VBO parameters are given by a KeyTek ’System 2’ generator with PN246I module.
See test circuits 3 for V BO dynamic parameters.
TEST CIRCUIT 1 FOR IBO and VBO parameters:
tp = 20ms
Auto
Transformer
220V/2A
R1
static
relay.
140
R2
240
K
220V
Vout
IBO
measure
Transformer
220V/800V
5A
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
VOUT Selection
- Device with VBO < 200 Volt
- VOUT = 250 VRMS, R1 = 140 Ω.
- Device with VBO ≥ 200 Volt
- VOUT = 480 VRMS, R2 = 240 Ω.
4/9
D.U.T
V BO
measure
Unit
V
SMP100-xxx
TEST CIRCUIT 2 for IH parameter.
R
- VP
D.U.T.
VBAT = - 48 V
Surge generator
This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the IH value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs.
- The D.U.T. will come back to the off-state within 50 ms max.
TEST CIRCUITS 3 FOR VBO DYNAMIC PARAMETERS
100 V / µs, di/dt < 10 A / µs, Ipp = 100 A
2Ω
U
45 Ω
83 Ω
10 µF
66 Ω
46 µH
0.36 nF
470 Ω
KeyTek ’System 2’ generator with PN246I module
1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A
26 µH
U
60 µF
250 Ω
47 Ω
46 µH
12 Ω
KeyTek ’System 2’ generator with PN246I module
5/9
SMP100-xxx
TYPICAL APPLICATIONS
1 - Primary protection module
3 * SMP100
Line
Card
MDF
2 - Line card protection
- Vbat
PTC
R
LINE A
RING
RELAY
Integrated
SLIC
220
nF
LINE B
PTC
R
3 * SMP100
LCP1511D
3 - ISDN: U interface protection
PTC
3 * SMP100
1/2 DA108S1
R3
R4
R5
PTC
Feeder
6/9
R6
+ 5V
Internal
circuitry
SMP100-xxx
Fig 1 : Non repetitive surge peak on-state current
versus overload duration (Tj initial = 25 °C).
Fig 2 : On-state voltage versus on-state current
(typical values).
I T (A)
ITSM(A)
50
70
F=50Hz
60
Tj=25°C
50
10
40
30
20
10
t(s)
0
1E-2
1E-1
1E+0
VT (V)
1E+1
1E+2
1E+3
Fig 3 : Relative variation of holding current versus
junction temperature.
IH[Tj] / IH[Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
-20
0
20
1
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
Fig 4 : Variation of thermal impedance junction to
ambient versus pulse duration.
Zth(j-a)(°CW)
100
10
tp(s)
Tj(°C)
40
60
80
100
120
1
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig 5 : Relative variation of junction capacitance
versus reverse voltage applied (typical values).
Note : For other types than SMP100-8, the curve can be
extrapolated (dotted line)
C[VR]/C[VR=1V]
1.0
F=1MHz
0.5
0.2
VR (V)
0.1
1
10
100
500
7/9
SMP100-xxx
MARKING
Type
Marking
Package
Weight
Base qty
Delivery mode
SMP100-8
PL8
SMB
0.107g
2500
Tape & Reel
SMP100LC-35
L35
SMB
0.107g
2500
Tape & Reel
SMP100-65
P06
SMB
0.107g
2500
Tape & Reel
SMP100-120
P12
SMB
0.107g
2500
Tape & Reel
SMP100-140
P14
SMB
0.107g
2500
Tape & Reel
SMP100-200
P20
SMB
0.107g
2500
Tape & Reel
SMP100-230
P23
SMB
0.107g
2500
Tape & Reel
SMP100-270
P27
SMB
0.107g
2500
Tape & Reel
SMP100-140H125
P16
SMB
0.107g
2500
Tape & Reel
SMP100-200H225
P22
SMB
0.107g
2500
Tape & Reel
SMP100-230H225
P24
SMB
0.107g
2500
Tape & Reel
SMP100-270H225
Epoxy meets UL94, V0
P29
SMB
0.107g
2500
Tape & Reel
ORDER CODE
SMP 100 - 270 H225
SURFACE
MOUNT
PROTECTION
8/9
IPP = 100A
VOLTAGE
H225 : IH = 225 mA
: IH = 150mA
SMP100-xxx
PACKAGE MECHANICAL DATA
SMB (Plastic)
DIMENSIONS
E1
REF.
D
E
A1
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
1.95
2.20
0.077
0.087
c
0.15
0.41
0.006
0.016
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
D
3.30
3.95
0.130
0.156
L
0.75
1.60
0.030
0.063
A2
C
L
b
FOOT PRINT (in millimeters)
2.3
1.52
2.75
1.52
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 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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