SMTPB SERIES TRISILTM MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes: ANALOG AND DIGITAL LINE CARDS MAIN DISTRIBUTION FRAMES TERMINALS AND TRANSMISSIONEQUIPMENT GMS-TUBE REPLACEMENT DESCRIPTION SMC The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. SCHEMATIC DIAGRAM FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 100 A, 10/1000 µs. BENEFITS NO AGEING AND NO NOISE IF DESTROYED, THE SMTPB FALLS INTO SHORT CIRCUIT, STILL ENSURING PROTECTION Peak Surge Voltage (V) Voltage Waveform (µs) Current Waveform (µs) Admissible Ipp (A) Necessary Resistor (Ω) CCITT K20 4000 10/700 5/310 100 - VDE0433 4000 4000 10/700 1.2/50 5/310 1/20 100 100 - IEC-1000-4-5 level 4 level 4 10/700 1.2/50 5/310 8/20 100 100 - FCC Part 68, lightning surge type A 1500 800 10/160 10/560 10/160 10/560 200 100 - FCC Part 68, lightning surge type B 100 5/320 5/320 25 - BELLCORE TR-NWT-001089 First level 2500 1000 2/10 10/1000 2/10 10/1000 500 100 - BELLCORE TR-NWT-001089 Second level 500 2/10 2/10 500 - CNET l31-24 4000 0.5/700 0.8/310 100 - COMPLIES WITH THE FOLLOWING STANDARDS: VDE0878 August 1999 - Ed: 2C 1/5 SMTPBxxx ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Value Unit P Power dissipation Tlead = 50 °C 5 W IPP Peak pulse current 10/1000 µs 8/20 µs 2/10 µs 100 250 500 A ITSM Non repetitive surge peak on-state current tp = 20 ms 50 A dV/dt Critical rate of rise of off-state voltage VRM 5 KV/µs - 55 to + 150 + 150 °C °C + 260 °C Value Unit Tstg Tj Storage temperature range Maximum junction temperature TL Maximum lead temperature for soldering during 10 s. THERMAL RESISTANCES Symbol Parameter Rth (j-l) Junction to leads 20 °C/W Rth (j-a) Junction to ambient. On printed circuit with standard footprint dimensions. 75 °C/W ELECTRICAL CHARACTERISTICS (Tamb =25°C) Symbol Parameter VRM Stand-off voltage Leakage current at stand-off voltage IRM VR VBR ContinuousReverse voltage VBO Breakover voltage IH IBO Holding current Breakover current IPP Peak pulse current C Capacitance Breakdown voltage Type Marking IRM @ VRM max. SMTPB62 SMTPB68 SMTPB120 SMTPB200 SMTPB270 IR @ VR max. note1 VBO @ IBO IH C max. note2 max. min. note3 typ. note4 Laser µA V µA V V mA mA pF W07 W11 W21 W31 W43 2 2 2 2 2 56 61 108 180 243 50 50 50 50 50 62 68 120 200 270 82 90 160 267 360 800 800 800 800 800 150 150 150 150 150 160 160 140 130 120 All parameters tested at 25°C, except where indicated. Note 1: Note 2: 2/5 IR measured at VR guarantees VBRmin ≥ VR Measured at 50 Hz (1 cycle) - See test circuit 1. Note 3: Note 4: See test circuit 2. VR = 1V, F = 1MHz. Refer to fig 3 for C versus VR. SMTPBxxx TEST CIRCUIT 1 FOR IBO and VBO parameters: tp = 20ms Auto Transformer 220V/2A R1 static relay. 140 R2 240 K 220V Vout IBO measure D.U.T V BO measure Transformer 220V/800V 5A TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. TEST CIRCUIT 2 for IH parameter. R - VP D.U.T. VBAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. 3/5 SMTPBxxx Fig. 1: Non repetitive surge peak on-state current versus overload duration (Tj initial=25°C). Fig. 2: Relative variation of holding current versus junction temperature. Fig. 3: Relative variation of junction capacitance versus reverse applied voltage(typical values). Note: For VRM upper than 56V, the curve is extrapolated(dotted line). Fig. 4: On-state voltage versus on-state current (typical values). IT(A) 50 Tj=25°C 10 VT(V) 1 2.0 Fig. 5: Transient thermal impedance junction to ambient versus pulse duration (for FR4 PC Board with recommended pad layout). 4/5 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 SMTPBxxx ORDER CODE SM TPB 100 SURFACE MOUNT VOLTAGE TRISIL PROTECTION 100 A Marking : Logo, date code, type code. PACKAGE MECHANICAL DATA. SMC DIMENSIONS REF. E1 D E A1 Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 2.90 3.2 0.114 0.126 c 0.15 0.41 0.006 0.016 E 7.75 8.15 0.305 0.321 E1 6.60 7.15 0.260 0.281 E2 4.40 4.70 0.173 0.185 D 5.55 6.25 0.218 0.246 L 0.75 1.60 0.030 0.063 A2 C E2 L b FOOTPRINT DIMENSIONS (in millimeters) SMC Packaging : Standardpackaging is in tapeand reel Weight : 0.25g. 3.3 2.0 4.2 2.0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5