SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 4-PORT LVDS AND 4-PORT TTL-TO-LVDS REPEATERS FEATURES • • • • • • • • • • Receiver and Drivers Meet or Exceed the Requirements of ANSI EIA/TIA-644 Standard – SN65LVDS105 Receives Low-Voltage TTL (LVTTL) Levels – SN65LVDS104 Receives Differential Input Levels, ±100 mV Typical Data Signaling Rates to 400 Mbps or Clock Frequencies to 400 MHz Operates From a Single 3.3-V Supply Low-Voltage Differential Signaling With Typical Output Voltage of 350 mV and a 100-Ω Load Propagation Delay Time – SN65LVDS105 – 2.2 ns (Typ) – SN65LVDS104 – 3.1 ns (Typ) LVTTL Levels Are 5-V Tolerant Electrically Compatible With LVDS, PECL, LVPECL, LVTTL, LVCMOS, GTL, BTL, CTT, SSTL, or HSTL Outputs With External Networks Driver Outputs Are High Impedance When Disabled or With VCC <1.5 V Bus-Pin ESD Protection Exceeds 16 kV SOIC and TSSOP Packaging DESCRIPTION The SN65LVDS104 and SN65LVDS105 are a differential line receiver and a LVTTL input (respectively) connected to four differential line drivers that implement the electrical characteristics of low-voltage differential signaling (LVDS). LVDS, as specified in EIA/TIA-644 is a data signaling technique that offers low-power, low-noise coupling, and switching speeds to transmit data at relatively long distances. (Note: The ultimate rate and distance of data transfer is dependent upon the attenuation characteristics of the media, the noise coupling to the environment, and other system characteristics.) SN65LVDS104 D OR PW PACKAGE (Marked as LVDS104) (TOP VIEW) EN1 EN2 EN3 VCC GND A B EN4 16 1 2 15 3 14 4 13 5 12 11 6 7 10 8 9 1Y 1Z 2Y 2Z 3Y 3Z 4Y 4Z SN65LVDS105 D OR PW PACKAGE (Marked as LVDS105) (TOP VIEW) EN1 EN2 EN3 VCC GND A NC EN4 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 1Y 1Z 2Y 2Z 3Y 3Z 4Y 4Z logic diagram (positive logic) ’LVDS104 1Y EN1 EN2 1Z 2Y 2Z EN3 3Y A B 3Z 4Y EN4 4Z ’LVDS105 1Y EN1 EN2 1Z 2Y 2Z EN3 3Y A 3Z 4Y EN4 4Z The intended application of this device and signaling technique is for point-to-point baseband data transmission over controlled impedance media of approximately 100 Ω. The transmission media may be printed-circuit board traces, backplanes, or cables. Having the drivers integrated into the same substrate, along with the low pulse skew of balanced signaling, allows extremely precise timing alignment of the signals repeated from the input. This is particularly advantageous in distribution or expansion of signals such as clock or serial data stream. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1999–2005, Texas Instruments Incorporated SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. DESCRIPTION (CONTINUED) The SN65LVDS104 and SN65LVDS105 are characterized for operation from –40°C to 85°C. The SN65LVDS104 and SN65LVDS105 are members of a family of LVDS repeaters. A brief overview of the family is provided in the table below. Selection Guide to LVDS Repeaters NO. INPUTS NO. OUTPUTS SN65LVDS22 DEVICE 2 LVDS 2 LVDS PACKAGE 16-pin D Dual multiplexed LVDS repeater COMMENT SN65LVDS104 1 LVDS 4 LVDS 16-pin D 4-Port LVDS repeater SN65LVDS105 1 LVTTL 4 LVDS 16-pin D 4-Port TTL-to-LVDS repeater SN65LVDS108 1 LVDS 8 LVDS 38-pin DBT 8-Port LVDS repeater SN65LVDS109 2 LVDS 8 LVDS 38-pin DBT Dual 4-port LVDS repeater SN65LVDS116 1 LVDS 16 LVDS 64-pin DGG 16-Port LVDS repeater SN65LVDS117 2 LVDS 16 LVDS 64-pin DGG Dual 8-port LVDS repeater Function Tables (1) SN65LVDS104 SN65LVDS105 INPUT OUTPUT INPUT VID = VA - VB xEN xY xZ X X Z X L Z VID ≥ 100 mV H –100 mV < VID < 100 mV VID ≤ –100 mV (1) OUTPUT A ENx xY xZ Z L Z H H L H H H H L L Open H L H H ? ? X L Z Z H L H X X Z Z H = high level, L = low level, Z = high impedance, ? = indeterminate, X = don't care EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS VCC VCC VCC 300 kΩ 300 kΩ EN and A (’LVDS105) Input A Input B Input 50 Ω 10 kΩ 7V 300 kΩ 7V 2 7V 5Ω Y or Z Output 7V SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) UNIT (2) Supply voltage range, VCC –0.5 to 4 V Enables, A ('LVDS105) Voltage range –0.5 to 6 V A, B, Y or Z Electrostatic discharge (3) –0.5 to 4 V A, B, Y, Z, and GND Class 3, A:16 kV, B: 400 V Continuous power dissipation See Dissipation Rating Table Storage temperature range –65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (1) (2) (3) 260°C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values, except differential I/O bus voltages, are with respect to network ground terminal. Tested in accordance with MIL-STD-883C Method 3015.7 DISSIPATION RATING TABLE (1) PACKAGE TA≤ 25°C POWER RATING OPERATING FACTOR (1) ABOVE TA = 25°C TA = 85°C POWER RATING D 950 mW 7.6 mW/°C 494 mW PW 774 mW 6.2 mW/°C 402 mW This is the inverse of the junction-to-ambient thermal resistance when board-mounted (low-k) and with no air flow. RECOMMENDED OPERATING CONDITIONS MIN NOM MAX 3.3 3.6 VCC Supply voltage 3 VIH High-level input voltage 2 VIL Low-level input voltage VI or VIC Voltage at any bus terminal (separately or common-mode) TA Operating free-air temperature UNIT V V 0.8 0 VCC–0.8 –40 85 V °C 3 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 SN65LVDS104 ELECTRICAL CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER VIT+ Positive-going differential input voltage threshold VIT- Negative-going differential input voltage threshold |VOD| Differential output voltage magnitude ∆|VOD| Change in differential output voltage magnitude between logic states VOC(SS) Steady-state common-mode output voltage ∆VOC(SS) Change in steady-state common-mode output voltage between logic states VOC(PP) Peak-to-peak common-mode output voltage ICC Supply current TEST CONDITIONS See Figure 1 and Table 1 RL = 100 Ω, VID = ± 100 mV, See Figure 1 and Figure 2 See Figure 3 MIN MAX UNIT 100 –100 247 340 mV 454 mV –50 50 1.125 1.375 –50 50 mV 25 150 mV 23 35 mA 3 8 mA –2 –11 –20 –1.2 –3 Enabled, RL = 100 Ω Disabled VI = 0 V TYP (1) V II Input current (A or B inputs) II(OFF) Power-off Input current VCC = 1.5 V, VI = 2.4 V 20 µA IIH High-level input current (enables) VIH = 2 V 20 µA IIL Low-level input current (enables) VIL = 0.8 V VI = 2.4 V µA 10 µA VOY or VOZ = 0 V ±10 mA VOD = 0 V ±10 mA ±1 µA ±1 µA IOS Short-circuit output current IOZ High-impedance output current VO = 0 V or 2.4 V IO(OFF) Power-off output current VCC = 1.5 V, VO = 2.4 V CIN Input capacitance (A or B inputs) VI = 0.4 sin (4E6πt) + 0.5 V 3 pF Output capacitance (Y or Z outputs) VI = 0.4 sin (4E6πt) + 0.5 V, Disabled 9.4 pF CO (1) All typical values are at 25°C and with a 3.3-V supply. SN65LVDS104 SWITCHING CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT tPLH Propagation delay time, low-to-high-level output 2.4 3.2 4.2 ns tPHL Propagation delay time, high-to-low-level output 2.2 3.1 4.2 ns tr Differential output signal rise time 0.3 0.8 1.2 ns tf Differential output signal fall time 0.3 0.8 1.2 ns tsk(p) Pulse skew (|tPHL - tPLH|) 150 500 ps 20 100 ps 1.5 ns RL = 100 Ω, CL = 10 pF, See Figure 4 skew (2) tsk(o) Channel-to-channel output tsk(pp) Part-to-part skew (3) tPZH Propagation delay time, high-impedance-to-high-level output 7.2 15 ns tPZL Propagation delay time, high-impedance-to-low-level output 8.4 15 ns tPHZ Propagation delay time, high-level-to-high-impedance output 3.6 15 ns tPLZ Propagation delay time, low-level-to-high-impedance output 6 15 ns (1) (2) (3) 4 See Figure 5 All typical values are at 25°C and with a 3.3-V supply. tsk(o) is the magnitude of the time difference between the tPLH or tPHL of all drivers of a single device with all of their inputs connected together. tsk(pp) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 SN65LVDS105 ELECTRICAL CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER |VOD| Differential output voltage magnitude ∆|VOD| Change in differential output voltage magnitude between logic states VOC(SS) Steady-state common-mode output voltage ∆VOC(SS) Change in steady-state common-mode output voltage between logic states VOC(PP) Peak-to-peak common-mode output voltage TEST CONDITIONS RL = 100 Ω, VID = ±100 mV, See Figure 6 and Figure 7 See Figure 8 MIN TYP (1) MAX UNIT 247 340 454 mV –50 50 1.125 1.37 5 –50 50 mV V 25 150 mV Enabled, RL = 100 Ω 23 35 mA Disabled 0.7 ICC Supply current 6.4 mA IIH High-level input current VIH = 2 V 20 µA IIL Low-level input current VIL = 0.8 V 10 µA IOS Short-circuit output current VOY or VOZ = 0 V ±10 mA VOD = 0 V ±10 mA IOZ High-impedance output current VO = 0 V or 2.4 V ±1 µA IO(OFF) Power-off output current VCC = 1.5 V, VO = 2.4 V ±1 µA CIN Input capacitance VI = 0.4 sin (4E6πt) + 0.5 V 5 pF Output capacitance (Y or Z outputs) VI = 0.4 sin (4E6πt) + 0.5 V, Disabled 9.4 pF CO (1) 0.3 All typical values are at 25°C and with a 3.3-V supply. SN65LVDS105 SWITCHING CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT tPLH Propagation delay time, low-to-high-level output 1.7 2.2 3 ns tPHL Propagation delay time, high-to-low-level output 1.4 2.3 3.5 ns tr Differential output signal rise time 0.3 0.8 1.2 ns tf Differential output signal fall time tsk(p) Pulse skew (|tPHL - tPLH|) tsk(o) Channel-to-channel output skew (2) RL = 100 Ω, CL = 10 pF, See Figure 9 0.3 0.8 1.2 ns 150 500 ps 20 100 ps skew (3) tsk(pp) Part-to-part 1.5 ns tPZH Propagation delay time, high-impedance-to-high-level output 7.2 15 ns tPZL Propagation delay time, high-impedance-to-low-level output 8.4 15 ns tPHZ Propagation delay time, high-level-to-high-impedance output 3.6 15 ns tPLZ Propagation delay time, low-level-to-high-impedance output 6 15 ns (1) (2) (3) See Figure 10 All typical values are at 25°C and with a 3.3-V supply. tsk(o) is the magnitude of the time difference between the tPLH or tPHL of all drivers of a single device with all of their inputs connected together. tsk(pp) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. 5 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 PARAMETER MEASUREMENT INFORMATION II IOY A Y IIB VID VOD IOZ V VOY Z VIA B OY V OZ 2 VOC VIB VOZ Figure 1. 'LVDS104 Voltage and Current Definitions Table 1. SN65LVDS104 Minimum and Maximum Input Threshold Test Voltages RESULTING DIFFERENTIAL INPUT VOLTAGE APPLIED VOLTAGES RESULTING COMMON-MODE INPUT VOLTAGE VIA VIB VID VIC 1.25 V 1.15 V 100 mV 1.2 V 1.15 V 1.25 V –100 mV 1.2 V 2.4 V 2.3 V 100 mV 2.35 V 2.3 V 2.4 V –100 mV 2.35 V 0.1 V 0V 100 mV 0.05 V 0V 0.1 V –100 mV 0.05 V 1.5 V 0.9 V 600 mV 1.2 V 0.9 V 1.5 V –600 mV 1.2 V 2.4 V 1.8 V 600 mV 2.1 V 1.8 V 2.4 V –600 mV 2.1 V 0.6 V 0V 600 mV 0.3 V 0V 0.6 V –600 mV 0.3 V 3.75 kΩ Y VOD Input Z 100 Ω 3.75 kΩ ± Figure 2. 'LVDS104 VOD Test Circuit 6 0 V ≤ VTEST ≤ 2.4 V SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 49.9 Ω ± 1% (2 Places) Y Input (see Note A) VI 1.4 V VI 1V Z VOC(PP) CL = 10 pF (2 Places) (see Note B) VOC VOC(SS) VO A. All input pulses are supplied by a generator having the following characteristics: tr or tf≤ 1 ns, pulse repetition rate (PRR) = 0.5 Mpps, pulsewidth = 500 ± 10 ns. B. CL includes instrumentation and fixture capacitance within 0,06 m of the D.U.T. The measurement of VOC(PP) is made on test equipment with a –3 dB bandwidth of at least 300 MHz. Figure 3. 'LVDS104 Test Circuit and Definitions for the Driver Common-Mode Output Voltage A Y B Z Input (see Note A) 1.4 V 1.2 V 1V VIB Input VIA tPLH VOD tPHL 100% 80% 100 Ω ± 1% VOD(H) Output CL = 10 pF (2 Places) (see Note B) 0V VOD(L) 20% 0% tf tr A. All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, pulse repetition rate (PRR) = 50 Mpps, pulsewidth = 10 ± 0.2 ns. B. CL includes instrumentation and fixture capacitance within 0,06 m of the D.U.T. Figure 4. 'LVDS104 Test Circuit, Timing, and Voltage Definitions for the Differential Output Signal 7 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 49.9 Ω ± 1% (2 Places) Y 1 V or 1.4 V Input (see Note A) Z 1.2 V 1.2 V EN CL = 10 pF (2 Places) (see Note B) VOY VOZ 3V 1.5 V 0V EN tPZH tPHZ ≅ 1.4 V 1.25 V 1.2 V VOY or VOZ tPZL tPLZ 1.2 V 1.15 V ≅1V VOZ or VOY A. All input pulses are supplied by a generator having the following characteristics: tr or tf≤ 1 ns, pulse repetition rate (PRR) = 0.5 Mpps, pulsewidth = 500 ± 10 ns. B. CL includes instrumentation and fixture capacitance within 0,06 m of the D.U.T. Figure 5. 'LVDS104 Enable and Disable Time Circuit and Definitions IOY II Y A IOZ VOD V VOY Z OY V OZ 2 VOC VIA VOZ Figure 6. 'LVDS105 Voltage and Current Definitions 3.75 kΩ Y VOD Input Z 100 Ω 3.75 kΩ ± Figure 7. 'LVDS105 VOD Test Circuit 8 0 V ≤ VTEST ≤ 2.4 V SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 49.9 Ω ± 1% (2 Places) 3V Y Input (see Note A) A 0V Z VOC(PP) VOC CL = 10 pF (2 Places) (see Note B) VOC(SS) VO A. All input pulses are supplied by a generator having the following characteristics: tr or tf≤ 1 ns, pulse repetition rate (PRR) = 0.5 Mpps, pulsewidth = 500 ± 10 ns. B. CL includes instrumentation and fixture capacitance within 0,06 m of the D.U.T. The measurement of VOC(PP) is made on test equipment with a -3 dB bandwidth of at least 300 MHz. Figure 8. 'LVDS105 Test Circuit and Definitions for the Driver Common-Mode Output Voltage Y Input (see Note A) Z 3V 1.5 V 0V Input VIA tPLH VOD tPHL 100 Ω ± 1% 100% 80% Output CL = 10 pF (2 Places) (see Note B) VOD(H) 0V VOD(L) 20% 0% tf A. All input pulses are supplied by a generator having the following characteristics: tr or tf≤ 1 ns, pulse repetition rate (PRR) = 50 Mpps, pulsewidth = 10 ± 0.2 ns. B. CL includes instrumentation and fixture capacitance within 0,06 m of the D.U.T. tr Figure 9. 'LVDS105 Test Circuit, Timing, and Voltage Definitions for the Differential Output Signal 9 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 Y 49.9 Ω ± 1% (2 Places) 0.8 V or 2 V Z Input (see Note A) 1.2 V EN CL = 10 pF (2 Places) (see Note B) VOY VOZ 3V 1.5 V 0V EN tPZH tPHZ VOY or VOZ ≅ 1.4 V 1.25 V 1.2 V tPZL tPLZ VOZ or VOY 1.2 V 1.15 V ≅1V A. All input pulses are supplied by a generator having the following characteristics: tr or tf≤ 1 ns, pulse repetition rate (PRR) = 0.5 Mpps, pulsewidth = 500 ± 10 ns. B. CL includes instrumentation and fixture capacitance within 0,06 m of the D.U.T. Figure 10. 'LVDS105 Enable and Disable Time Circuit and Definitions 10 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 TYPICAL CHARACTERISTIC SN65LVDS104 SUPPLY CURRENT vs FREQUENCY SN65LVDS105 SUPPLY CURRENT vs FREQUENCY 60 50 45 I CC − Supply Current − mA I CC − Supply Current − mA 55 50 VCC = 3.6 V 45 VCC = 3 V 40 35 VCC = 3.3 V 40 VCC = 3.6 V 35 VCC = 3 V 30 VCC = 3.3 V 25 30 All Outputs Loaded and Enabled 25 50 100 150 200 250 300 All Outputs Loaded and Enabled 20 350 50 100 150 f − Frequency − MHz 250 300 Figure 11. Figure 12. DRIVER LOW-LEVEL OUTPUT VOLTGE vs LOW-LEVEL OUTPUT CURRENT DRIVER HIGH-LEVEL OUTPUT VOLTGE vs HIGH-LEVEL OUTPUT CURRENT 350 3.5 4 VCC = 3.3 V TA = 25°C VOH − High-Level Output Voltage − V VOL − Low-Level Output Voltage − V 200 f − Frequency − MHz 3 2 1 VCC = 3.3 V TA = 25°C 3 2.5 2 1.5 1 0.5 0 0 0 2 4 IOL − Low-Level Output Current − mA Figure 13. 6 −4 −3 −2 −1 0 IOH − High-Level Output Current − mA Figure 14. 11 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 TYPICAL CHARACTERISTIC (continued) SN65LVDS104 HIGH-TO-LOW PROPAGATION DELAY TIME vs FREE-AIR TEMPERATURE 3.6 t PHL − High-To-Low Propagation Delay Time − ns t PLH − Low-To-High Propagation Delay Time − ns SN65LVDS104 LOW-TO-HIGH PROPAGATION DELAY TIME vs FREE-AIR TEMPERATURE 3.5 3.4 VCC = 3.3 V 3.3 3.2 VCC = 3 V 3.1 VCC = 3.6 V 3.0 2.9 2.8 −50 −25 0 25 50 75 100 3.6 3.5 3.4 3.3 VCC = 3 V 3.2 VCC = 3.3 V 3.1 VCC = 3.6 V 3.0 2.9 2.8 −50 0 25 50 75 Figure 15. Figure 16. SN65LVDS105 LOW-TO-HIGH PROPAGATION DELAY TIME vs FREE-AIR TEMPERATURE SN65LVDS105 HIGH-TO-LOW PROPAGATION DELAY TIME vs FREE-AIR TEMPERATURE 2.7 2.6 2.5 2.4 VCC = 3 V 2.3 2.2 VCC = 3.3 V 2.1 2.0 −50 VCC = 3.6 V −25 0 25 50 TA − Free-Air Temperature − °C Figure 17. 12 −25 100 TA − Free-Air Temperature − °C t PHL − High-To-Low Propagation Delay Time − ns t PLH − Low-To-High Propagation Delay Time − ns TA − Free-Air Temperature − °C 75 100 2.7 2.6 2.5 VCC = 3 V 2.4 2.3 VCC = 3.3 V 2.2 VCC = 3.6 V 2.1 2.0 −50 −25 0 25 50 TA − Free-Air Temperature − °C Figure 18. 75 100 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 TYPICAL CHARACTERISTIC (continued) SN65LVDS104 P-P EYE-PATTERN JITTER vs PRBS SIGNALING RATE 800 TA = 25C 700 Peak-to-Peak Jitter − ps VCC = 3.6 V 600 500 VCC = 3 V 400 300 200 100 0 0 100 200 300 400 500 600 Signaling Rate − Mbps NOTES: Input: 215 PRBS with peak-to-peak jitter <115 ps at 100 Mbps. Test board adds about 70 ps p-p jitter. All outputs enabled and loaded with differential 100-Ω loads, worst-case output, supply decoupled with 0.1-µF ceramic 0603-style capacitors 1 cm from the device. Figure 19. SN65LVDS104 P-P PERIOD JITTER vs CLOCK FREQUENCY 18 TA = 25C 16 VCC = 3 V Peak-to-Peak Jitter − ps 14 12 10 VCC = 3.6 V 8 6 4 2 0 0 100 200 300 400 500 Clock Frequency − MHz 600 NOTES: Input: 50% duty cycle square wave with period jitter < 9 ps at 100 MHz. Test board adds about 5 ps p-p jitter. All outputs enabled and loaded with differential 100-Ω loads, worst-case output, supply decoupled with 0.1-µF and 0.001-µF ceramic 0603-style capacitors 1 cm from the device. Figure 20. 13 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 TYPICAL CHARACTERISTIC (continued) SN65LVDS105 P-P EYE-PATTERN JITTER vs PRBS SIGNALING RATE 600 TA = 25C VCC = 3.6 V Peak-to-Peak Jitter − ps 500 VCC = 3 V 400 300 200 100 0 0 100 200 300 400 500 600 Signaling Rate − Mbps NOTES: Input: 215 PRBS with peak-to-peak Jitter < 147 ps at 100 Mbps, Test board adds about 43 ps p-p jitter. All outputs enabled and loaded with differential 100-Ω loads, worst-case output, supply decoupled with 0.1-µF and 0.001-µF ceramic 0603-style capacitors 1 cm from the device. Figure 21. SN65LVDS105 P-P PERIOD JITTER vs CLOCK FREQUENCY 14 TA = 25C Peak-to-Peak Jitter − ps 12 VCC = 3.6 V 10 8 6 VCC = 3 V 4 2 0 0 100 200 300 400 500 Clock Frequency − MHz 600 NOTES: Input: 50% duty cycle square wave with period jitter < 10 ps at 100 MHz. Test board adds about 5 ps p-p jitter. All outputs enabled and loaded with differential 100-Ω loads, worst-case output, supply decoupled with 0.1-µF and 0.001-µF ceramic 0603-style capacitors 1 cm from the device. Figure 22. 14 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 APPLICATION INFORMATION INPUT LEVEL TRANSLATION An LVDS receiver can be used to receive various other types of logic signals. Figure 23 through Figure 32 show the termination circuits for SSTL, HSTL, GTL, BTL, LVPECL, PECL, CMOS, and TTL. VDD 25 Ω 50 Ω A 1/2 VDD 50 Ω B 0.1 µF LVDS Receiver Figure 23. Stub-Series Terminated (SSTL) or High-Speed Transceiver Logic (HSTL) VDD 50 Ω A 50 Ω B 1.35 V < VTT < 1.65 V 0.1 µF LVDS Receiver Figure 24. Center-Tap Termination (CTT) 1.14 V < VTT < 1.26 V VDD 1 kΩ 50 Ω 50 Ω A B 2 kΩ 0.1 µF LVDS Receiver Figure 25. Gunning Transceiver Logic (GTL) 15 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 APPLICATION INFORMATION (continued) Z0 Z0 A B 1.47 V < VTT < 1.62 V 0.1 µF LVDS Receiver Figure 26. Backplane Transceiver Logic (BTL) 3.3 V 3.3 V 50 Ω 120 Ω 120 Ω 33 Ω ECL A 50 Ω 33 Ω B 51 Ω 51 Ω LVDS Receiver Figure 27. Low-Voltage Positive Emitter-Coupled Logic (LVPECL) 16 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 APPLICATION INFORMATION (continued) 5V 5V 82 Ω 50 Ω 82 Ω 100 Ω ECL A 50 Ω 100 Ω B 33 Ω 33 Ω LVDS Receiver Figure 28. Positive Emitter-Coupled Logic (PECL) 3.3 V 3.3 V 7.5 kΩ A B 7.5 kΩ 0.1 µF LVDS Receiver Figure 29. 3.3-V CMOS 17 SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 APPLICATION INFORMATION (continued) 5V 5V 10 kΩ 560 Ω A B 560 Ω 3.32 kΩ 0.1 µF LVDS Receiver Figure 30. 5-V CMOS 5V 5V 10 kΩ 470 Ω A B 3.3 V 4.02 kΩ 0.1 µF LVDS Receiver Figure 31. 5-V TTL 3.3 V 3.3 V 4.02 kΩ 560 Ω A B 3.01 kΩ Figure 32. LVTTL 18 0.1 µF LVDS Receiver SN65LVDS104 SN65LVDS105 www.ti.com SLLS396F – SEPTEMBER 1999 – REVISED JANUARY 2005 APPLICATION INFORMATION (continued) FAIL SAFE A common problem with differential signaling applications is how the system responds when no differential voltage is present on the signal pair. The LVDS receiver is like most differential line receivers, in that its output logic state can be indeterminate when the differential input voltage is between –100 mV and 100 mV and within its recommended input common-mode voltage range. Hovever, TI LVDS receivers handles the open-input circuit situation differently. Open-circuit means that there is little or no input current to the receiver from the data line itself. This could be when the driver is in a high-impedance state or the cable is disconnected. When this occurs, the LVDS receiver pulls each line of the signal pair to near VCC through 300-kΩ resistors as shown in Figure 33. The fail-safe feature uses an AND gate with input voltage thresholds at about 2.3 V to detect this condition and force the output to a high-level regardless of the differential input voltage. VCC 300 kΩ 300 kΩ A Rt = 100 Ω (Typ) Y B VIT ≈ 2.3 V Figure 33. Open-Circuit Fail Safe of the LVDS Receiver It is only under these conditions that the output of the receiver will be valid with less than a 100 mV differential input voltage magnitude. The presence of the termination resistor, Rt, does not affect the fail-safe function as long as it is connected as shown in Figure 33. Other termination circuits may allow a dc current to ground that could defeat the pullup currents from the receiver and the fail-safe feature. 19 PACKAGE OPTION ADDENDUM www.ti.com 8-Jan-2007 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty SN65LVDS104D ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS104DG4 ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS104DR ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS104DRG4 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS104PW ACTIVE TSSOP PW 16 90 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS104PWG4 ACTIVE TSSOP PW 16 90 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS104PWR ACTIVE TSSOP PW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS104PWRG4 ACTIVE TSSOP PW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS105D ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS105DG4 ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS105DR ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS105DRG4 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS105PW ACTIVE TSSOP PW 16 90 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS105PWG4 ACTIVE TSSOP PW 16 90 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS105PWR ACTIVE TSSOP PW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65LVDS105PWRG4 ACTIVE TSSOP PW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 8-Jan-2007 (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 11-Mar-2008 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel Diameter Width (mm) W1 (mm) A0 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 10.3 2.1 8.0 16.0 Q1 SN65LVDS104DR SOIC D 16 2500 330.0 16.4 6.5 SN65LVDS104PWR TSSOP PW 16 2000 330.0 12.4 7.0 5.6 1.6 8.0 12.0 Q1 SN65LVDS105DR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1 SN65LVDS105PWR TSSOP PW 16 2000 330.0 12.4 7.0 5.6 1.6 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 11-Mar-2008 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) SN65LVDS104DR SOIC D 16 2500 346.0 346.0 33.0 SN65LVDS104PWR TSSOP PW 16 2000 346.0 346.0 29.0 SN65LVDS105DR SOIC D 16 2500 346.0 346.0 33.0 SN65LVDS105PWR TSSOP PW 16 2000 346.0 346.0 29.0 Pack Materials-Page 2 MECHANICAL DATA MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999 PW (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE 14 PINS SHOWN 0,30 0,19 0,65 14 0,10 M 8 0,15 NOM 4,50 4,30 6,60 6,20 Gage Plane 0,25 1 7 0°– 8° A 0,75 0,50 Seating Plane 0,15 0,05 1,20 MAX PINS ** 0,10 8 14 16 20 24 28 A MAX 3,10 5,10 5,10 6,60 7,90 9,80 A MIN 2,90 4,90 4,90 6,40 7,70 9,60 DIM 4040064/F 01/97 NOTES: A. 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