VISHAY SQJ962EP

SQJ962EP
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
• AEC-Q101 Qualified
• 100 % Rg and UIS Tested
60
RDS(on) () at VGS = 10 V
0.060
RDS(on) () at VGS = 4.5 V
0.080
ID (A) per leg
8
Configuration
Dual
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® SO-8L Dual
D1
m
5m
6.1
D2
5.1
3m
m
D
2
G1
D
1
4
G2
S2
G2
3
2
G1
1
S1
S1
Bottom View
N-Channel MOSFET
S2
N-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK SO-8L
Lead (Pb)-free and Halogen-free
SQJ962EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
ID
IDM
32
IAS
10
TJ, Tstg
Operating Junction and Storage Temperature Range
8
8
PD
Soldering Recommendations (Peak Temperature)d, e
V
8
IS
EAS
UNIT
5
25
8
- 55 to + 175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
SYMBOL
LIMIT
RthJA
85
RthJC
6
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection..
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-2198-Rev. C, 24-Sep-12
Document Number: 67018
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ962EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 60 V
-
-
1
-
-
50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 60 V, TJ = 125 °C
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
150
On-State Drain Currenta
ID(on)
VGS = 10 V
VDS5 V
15
-
-
VGS = 10 V
ID = 4.3 A
-
0.046
0.060
VGS = 10 V
ID = 4.3 A, TJ = 125 °C
-
-
0.102
VGS = 10 V
ID = 4.3 A, TJ = 175 °C
-
-
0.127
VGS = 4.5 V
ID = 3.5 A
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VDS = 15 V, ID = 4.3 A
-
0.060
0.080
-
10
-
-
379
475
-
72
90
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
32
40
Total Gate Chargec
Qg
-
8.5
14
-
1.4
-
-
3.3
-
f = 1 MHz
2.25
4.50
6.75
-
5
8
VDD = 30 V, RL = 30 
ID  1 A, VGEN = 10 V, Rg = 1 
-
11
17
-
16
24
-
6
9
Gate-Source
Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 30 V, ID = 4.5 A
td(on)
tr
td(off)
tf
pF
nC

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 3.5 A, VGS = 0 V
-
-
32
A
-
0.8
1.1
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S12-2198-Rev. C, 24-Sep-12
Document Number: 67018
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ962EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
20
VGS = 10 V thru 5 V
16
ID - Drain Current (A)
ID - Drain Current (A)
16
VGS = 4 V
12
8
12
TC = 25 °C
8
4
4
VGS = 3 V
TC = 125 °C
1
2
3
4
0
5
4
6
8
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
20
1.6
16
1.2
TC = 25 °C
0.8
0.4
TC = 125 °C
1
2
10
TC = - 55 °C
TC = 25 °C
12
TC = 125 °C
8
4
TC = - 55 °C
0.0
0
2
VGS - Gate-to-Source Voltage (V)
gfs - Transconductance (S)
ID - Drain Current (A)
0
3
4
0
5
0
3
6
9
12
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Transconductance
15
600
0.24
0.21
500
0.18
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
0
0
0.15
0.12
VGS = 4.5 V
0.09
Ciss
400
300
200
0.06
Coss
0.03
100
VGS = 10 V
0.00
0
4
8
12
16
ID - Drain Current (A)
On-Resistance vs. Drain Current
S12-2198-Rev. C, 24-Sep-12
20
Crss
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 67018
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ962EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
2.5
2.1
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 4.3 A
ID = 5 A
VDS = 30 V
8
6
4
2
VGS = 10 V
1.7
VGS = 4.5 V
1.3
0.9
0
0
2
4
6
8
0.5
- 50 - 25
10
0
Qg - Total Gate Charge (nC)
100
0.25
10
0.20
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
75
100
125
150
175
On-Resistance vs. Junction Temperature
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.15
TJ = 150 °C
0.10
0.05
TJ = 25 °C
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
6
8
10
VGS - Gate-to-Source Voltage (V)
77
0.6
VDS - Drain-to-Source Voltage (V)
0.3
0.0
ID = 5 mA
- 0.3
ID = 250 μA
- 0.6
- 0.9
- 1.2
- 50 - 25
4
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
VGS(th) Variance (V)
50
TJ - Junction Temperature (°C)
Gate Charge
0.001
0.0
25
0
25
50
75
100
125
150
175
74
ID = 1 mA
71
68
65
62
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S12-2198-Rev. C, 24-Sep-12
Document Number: 67018
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ962EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
ID - Drain Current (A)
IDM Limited
ID Limited
10
100 μs
1 ms
10 ms
100 ms
1 s,10 s, DC
1
Limited by RDS(on)*
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1 . Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10- 4
t1
t2
10- 3
4. Surface Mounted
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2198-Rev. C, 24-Sep-12
Document Number: 67018
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ962EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-5
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.


































Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67018.
S12-2198-Rev. C, 24-Sep-12
Document Number: 67018
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline
Revision: 27-Aug-12
Document Number: 69003
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MILLIMETERS
DIM.
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2 (for Al product)
2.75
2.85
2.95
0.108
0.112
0.116
E2 (for other product)
3.18
3.28
3.38
0.125
0.129
0.133
0.006
F
-
-
0.15
-
-
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96

0°
-
0.020
0.117
10°
0°
-
10°
ECN: C12-0026-Rev. B, 27-Aug-12
DWG: 5976
Note
• Millimeters will gover
Revision: 27-Aug-12
Document Number: 69003
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000