SSG4392N 2.9A, 150V, RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. B L D M FEATURES A Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. C N J H REF. A B C D E F G APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION K G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D Package MPQ Leader Size S D SOP-8 2.5K 13’ inch G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V 2.9 A 2.4 A IDM 20 A IS 4 A 3.1 W 2.2 W -55~150 °C TA = 25°C Continuous Drain Current 1 Pulsed Drain Current TA = 70°C 2 Continuous Source Current (Diode Conduction) 1 TA = 25°C Total Power Dissipation 1 TA = 70°C Operating Junction & Storage Temperature Range ID PD TJ, TSTG THERMAL RESISTANCE RATINGS Maximum Junction to Case 1 Maximum Junction to Ambient 1 t ≦ 5 sec RθJC 40 °C / W t ≦ 5 sec RθJA 80 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 12-May-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSG4392N 2.9A, 150V, RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - ±10 nA VDS=0, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 1 - - 25 1.5 - - - - 255 - - 290 gfs - 10 - S VDS=15V, ID=2.3A VSD - 0.7 - V IS=2A, VGS=0 pF VDS=15V VGS=0 f=1MHz nC ID=2.3A VDS=75V VGS=4.5V ns VDD=75V ID=2.3A VGEN=10V RL= 32.3Ω RGEN=6Ω On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) Dynamic Ciss - 920 Output Capacitance Coss - 101 Reverse Transfer Capacitance Crss - 77 Total Gate Charge Qg - 12 - Gate-Source Charge Qgs - 3.3 - Gate-Drain Charge Qgd - 6.5 - Turn-On Delay Time Td(on) - 10 - Tr - 11 - Td(off) - 59 - Tf - 23 - Turn-Off Delay Time Fall Time A mΩ VDS=120V, VGS=0 VDS=120V, VGS=0, TJ= 55°C VDS=5V, VGS=10V VGS=10V, ID=2.3A VGS=4.5V, ID=2.2A 2 Input Capacitance Rise Time μA Notes: 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 12-May-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG4392N Elektronische Bauelemente 2.9A, 150V, RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 12-May-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG4392N Elektronische Bauelemente 2.9A, 150V, RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 12-May-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4