SSG4490N 5.2 A, 100 V, RDS(ON) 78 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L A C FEATURES D M N Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOIC-8 saves board space. Fast switching speed. High performance trench technology. J H REF. A B C D E F G PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID @ TA = 25°C 5.2 A ID @ TA = 70°C 3.9 A Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range IDM 50 A IS 2.3 A PD @ TA = 25°C 3.1 W PD @ TA = 70°C 2.2 W TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 t≦5 sec RθJC 25 °C / W Thermal Resistance Junction-ambient (Max.) 1 t≦5 sec RθJA 50 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 17-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 2 SSG4490N 5.2 A, 100 V, RDS(ON) 78 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage VGS(th) 1 - - V VDS= VGS, ID=-250μA Gate-Body Leakage Current IGSS - - ±100 nA VDS= 0V, VGS=20V Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 Drain-Source On-Resistance 1 ID(on) RDS(ON) - - 1 μA VDS=80V, VGS=0V - - 25 μA VDS=80V, VGS=0V, TJ=55°C A 20 - - - - 78 - - 92 40 - S VDS=15V, ID=5.2A 0.7 - V IS=2.3A, VGS=0V Forward Transconductance 1 gfs - Diode Forward Voltage VSD - mΩ VDS=5V, VGS=10V VGS=10V, ID=5.2A VGS=4.5V, ID=4.8A Dynamic 2 Total Gate Charge Qg - 12.5 - Gate-Source Charge Qgs - 2.6 - Gate-Drain(“Miller”) Charge Qgd - 4.6 - nC ID=5.2A VDS=15V VGS=4.5V nS VDD=25V ID=1A VGEN=10V RL=25Ω Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Td(on) - 20 - Tr - 9 - Td(off) - 70 - Tf - 20 - Notes 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 17-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 2