SSPS7333P -10.9 A , -30 V , RDS(ON) 20 mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION DFN3x3-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. B D C FEATURES θ Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology e E A b d g APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. F G PACKAGE INFORMATION Package MPQ DFN3x3-8PP 3K Top View Leader Size REF. A B C D E F G 13 inch Millimeter Min. Max. 0.70 0.90 3.00BSC 0.10 0.25 1.80 2.3 3.2BSC 0.01 0.02 2.35BSC REF. θ b d e g Millimeter Min. Max. 0° 12° 0.20 0.40 0.65BSC 3.00BSC 0.70(TYP.) MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Ratings Unit VDS -30 V VGS Continuous Drain Current Pulsed Drain Current Symbol 1 TA = 25°C TA = 70°C 2 Total Power Dissipation ID IDM 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range PD TJ, TSTG ±20 V -10.9 A -8.9 A -50 A 3.5 W 2.0 W -55~150 °C 35 °C / W 81 °C / W Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 19-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SSPS7333P -10.9 A , -30 V , RDS(ON) 20 mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) -1 - - V VDS=VGS, ID= -250µA Gate-Body Leakage Current IGSS - - ±100 nA VDS=0, VGS= ±25V - - -1 Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistance Diode Forward Voltage 1 RDS(ON) VSD µA - - -5 - - 20 - - -0.8 Dynamic 36 - Qg - 33 - Gate-Source Charge Qgs - 5 - Gate-Drain Charge Qgd - 9 - Turn-On Delay Time Td(on) - 10 - Tr - 6 - Td(off) - 34 - Tf - 20 - Turn-Off Delay Time Fall Time VGS= -10V, ID= -10A VGS= -4.5V, ID= -8A V IS=2.5A, VGS=0 2 Total Gate Charge Rise Time VDS= -24V, VGS=0, TJ=55°C mΩ - VDS= -24V, VGS=0 nC VDS= -15 V, VGS= -5 V, ID= -11.5 A nS VDD= -15V ID= -1A VGEN= -10V RL=6Ω Notes: 1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 19-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2