SSG4842N 23A , 40V , RDS(ON) 9 mΩ Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. B L D M FEATURES A Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Low Thermal Impedance Copper Leadframe SOIC-8 Saves Board Space Fast Switching Speed High Performance Trench Technology N J H REF. A B C D E F G APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch C K G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V 23 A 19 A IDM 60 A IS 2.9 A 3.1 W 2.2 W -55~150 °C 40 °C / W 80 °C / W Continuous Drain Current TA = 25°C 1 TA = 70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25°C 1 TA = 70°C Operating Junction & Storage Temperature Range ID PD TJ, TSTG Thermal Resistance Rating Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 13-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SSG4842N 23A , 40V , RDS(ON) 9 mΩ Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250µA Gate-Body Leakage IGSS - - 100 nA VDS=0, VGS=20V - - 1 Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 1 µA - - 5 30 - - - - 9 RDS(ON) VDS=5V, VGS=10V VGS=10V, ID=23A - 12 gfs - 90 - S VDS=15V, ID=23A VSD - 0.7 VGS=4.5V, ID=20A - V IS=2.3A, VGS=0 2 Qg - 25 - Gate-Source Charge Qgs - 6 - Gate-Drain Charge Qgd - 9 - Turn-On Delay Time Td(on) - 20 - Tr - 13 - Td(off) - 82 - Tf - 43 - Fall Time A - Total Gate Charge Turn-Off Delay Time VDS=24V, VGS=0, TJ=55°C mΩ Dynamic Rise Time VDS=24V, VGS=0 nC ID=23A VDS=15V VGS=4.5V nS VDD=15V ID=1A VGEN=10V RL=6Ω Notes: 1. Pulse test：PW≦300µs duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 13-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2