SSM20N03S,P
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Dynamic dv/dt rating
D
Repetitive-avalanche rated
30V
R DS(ON)
52mΩ
ID
Fast switching
G
Simple drive requirement
BVDSS
20A
S
Description
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-263
The TO-263 package is widely preferred for commercial and
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM20N03P) is available for low-footprint applications.
G
Absolute Maximum Ratings
Symbol
Parameter
D
TO-220
S
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
± 20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
20
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
13
A
1
IDM
Pulsed Drain Current
58
A
PD@TC=25℃
Total Power Dissipation
31
W
Linear Derating Factor
0.25
W/ ℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
4.0
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
62
℃/W
Rev.2.01 6/26/2003
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SSM20N03S,P
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A
-
-
52
mΩ
VGS=4.5V, ID=8A
-
-
85
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=10A
-
3
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=24V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=10A
-
6.1
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
4
-
nC
VDS=15V
-
4.9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
29
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
14.3
-
ns
tf
Fall Time
RD=0.75Ω
-
3.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
290
-
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
-
-
20
A
-
-
58
A
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode ) 1
VSD
2
Forward On Voltage
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25℃, IS=20A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Rev.2.01 6/26/2003
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SSM20N03S,P
50
70
T C =150 o C
o
T C =25 C
V G =10V
60
V G =10V
40
ID , Drain Current (A)
ID , Drain Current (A)
V G =8.0V
50
V G =6.0V
40
30
20
V G =8.0V
30
V G =6.0V
20
V G =4.0V
V G =4.0V
10
V G =3.0V
10
V G =3.0V
0
0
0
1
2
3
4
5
6
7
8
9
0
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
85
1.80
I D =10A
I D =10A
80
T C =25 o C
V G =10V
1.60
75
Normalized R DS(ON)
RDSON (mΩ )
70
65
60
55
1.40
1.20
1.00
50
45
0.80
40
0.60
35
3
4
5
6
7
8
9
10
-50
0
50
100
150
o
V GS (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Rev.2.01 6/26/2003
11
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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SSM20N03S,P
25
40
20
15
PD (W)
ID , Drain Current (A)
30
20
10
10
5
0
0
25
50
75
100
125
0
150
50
o
100
150
o
T c , Case Temperature ( C)
T c ,Case Temperature( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
10
Normalized Thermal Response (R thjc)
100
ID (A)
10us
100us
10
1ms
10ms
D=0.01 T c =25 o C
1
DUTY=0.5
0.2
PDM
0.1
0.1
t
SINGLE PULSE
0.05
T
0.02
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
0.01
100ms
0.01
1
1
10
100
0.00001
0.0001
V DS (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Rev.2.01 6/26/2003
0.001
Fig 8. Effective Transient Thermal Impedance
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SSM20N03S,P
f=1.0MHz
1000
12
Id=10A
V D =16V
V D =20V
8
Ciss
V D =24V
C (pF)
VGS , Gate to Source Voltage (V)
10
6
Coss
100
Crss
4
2
0
10
0
2
4
6
8
10
12
1
6
11
16
21
26
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
100
10
T j = 150 o C
2
VGS(th) (V)
IS (A)
T j = 25 o C
1
1
0.1
0
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Fig 11. Forward Characteristic of
Reverse Diode
Rev.2.01 6/26/2003
-50
0
50
100
150
T j , Junction Temperature( o C)
V SD (V)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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SSM20N03S,P
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
+
10%
VGS
S
10 V
VGS
-
td(on) tr
Fig 13. Switching Time Circuit
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
D
5V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.01 6/26/2003
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