SSM25T03GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
30V
R DS(ON)
35mΩ
ID
20A
DESCRIPTION
The SSM25T03 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
G
The through-hole version, the SSM250T03GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
D
D
S
S
TO-251 (suffix J)
The SSM25T03GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VDS
Drain-source voltage
30
V
VGS
Gate-source voltage
±20
V
ID
Continuous drain current, TC = 25°C
20
A
12
A
45
A
20
W
0.16
W/°C
TC = 100°C
1
IDM
Pulsed drain current
PD
Total power dissipation, TC = 25°C
Linear derating factor
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
Parameter
RΘ JC
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
RΘ JA
Value
6
110
Units
°C/\W
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
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SSM25T03GH,J
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=250uA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.02
-
V/°C
RDS(ON)
Static drain-source on-resistance
VGS=10V, ID=12A
-
-
35
mΩ
VGS=4.5V, ID=7A
-
-
55
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate threshold voltage
gfs
Forward transconductance
VDS=10V, ID=12A
-
13
-
S
IDSS
Drain-source leakage current
VDS=30V, VGS=0V
-
-
1
uA
VDS=24V ,VGS=0V, Tj =150°C
-
-
25
uA
VGS=±20V
-
-
±100
nA
ID=12A
-
6
10
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=24V
-
2
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=4.5V
-
4
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=12A
-
200
-
ns
td(off)
Turn-off delay time
RG=3.3Ω , VGS=10V
-
10
-
ns
tf
Fall time
RD=1.25Ω
-
3
-
ns
Ciss
Input capacitance
VGS=0V
-
440
705
pF
Coss
Output capacitance
VDS=25V
-
105
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
75
-
pF
Min.
Typ.
IS=12A, VGS=0V
-
-
1.3
V
IS=12A, VGS=0V,
-
18
-
ns
dI/dt=100A/µs
-
6
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Forward voltage
2
2
trr
Reverse-recovery time
Qrr
Reverse-recovery charge
Test Conditions
Max. Units
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
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SSM25T03GH,J
50
50
10V
10V
7.0V
o
T C =25 C
o
T C = 150 C
ID , Drain Current (A)
ID , Drain Current (A)
7.0V
40
40
30
5.0V
4.5V
20
10
30
5.0V
20
4.5V
V G =3.0V
10
V G =3.0V
0
0
0
1
2
3
4
5
0
Fig 1. Typical Output Characteristics
2
3
4
5
Fig 2. Typical Output Characteristics
1.6
105
ID=7A
I D = 12 A
V G =10V
1.4
o
85
T C =25 C
Normalized RDS(ON)
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
65
1.2
1.0
45
0.8
25
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
10
1.8
Normalized VGS(th) (V)
8
6
IS (A)
T j =150 o C
T j =25 o C
4
1.4
1
0.6
2
0.2
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
10/2/2006 Rev.3.1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM25T03GH,J
f=1.0MHz
14
1000
ID=12A
C iss
V DS =15V
V DS =20V
V DS =24V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C oss
100
C rss
4
2
0
10
0
4
8
12
16
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (R thjc)
1
10
ID (A)
100us
1ms
10ms
100ms
DC
1
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
V DS =5V
ID , Drain Current (A)
25
T j =25 o C
20
QG
T j =150 o C
4.5V
QGS
15
QGD
10
5
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10/2/2006 Rev.3.1
Fig 12. Gate Charge Waveform
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SSM25T03GH,J
PHYSICAL DIMENSIONS: TO-251 (I-PAK)
D
A
D1
c1
E2
E1
E
A1
B2
F
B1
F1
c
e
Millimeters
SYMBOLS
MIN
NOM
MAX
A
2.20
2.30
2.40
A1
0.90
1.20
1.50
B1
0.50
0.60
0.70
B2
0.60
0.72
0.90
c
c1
0.45
0.50
0.60
0.45
0.50
0.55
D
6.40
6.60
6.80
D1
5.20
5.35
5.50
E
6.80
7.00
7.20
E1
5.40
5.60
5.80
E2
1.40
1.50
1.60
e
--
2.30
--
F
7.20
7.50
7.80
F1
1.50
1.60
1.80
1.All dimensions are in millimeters.
2.Dimensions do not include mold protrusions.
e
PHYSICAL DIMENSIONS: TO-252 (D-PAK)
A
E
S
Y
M
B
O
L
c2
H
D
L4
A
A
e
SEE VIEW B
MIN.
MAX.
1.80
2.80
c
WITH PLATING
BASE METAL
SECTION A-A
θ
SEATING PLANE
L1
0.00
0.13
0.40
1.00
b3
4.80
5.90
c
0.35
0.65
c2
0.40
0.89
D
5.10
6.30
E
6.00
7.00
2.30 BSC
H
7.80
L
1.00
2.55
L1
2.20
3.05
L2
0.35
0.65
L3
0.50
2.03
L4
0.50
1.20
θ
0°
8°
11.05
A1
L2
L
A1
b
e
b
GAUGE PLANE
TO-252-3L
MILLIMETERS
A
L3
b3
VIEW B
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SSM25T03GH,J
PART MARKING
PART NUMBER: 25T03GH or 25T03GJ
XXXXXX
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
YWWSSS
PACKING: Moisture sensitivity level MSL3
TO-252: 3000 pcs in antistatic tape on a reel packed inside a moisture barrier bag (MBB).
TO-251: 1000pcs in tubes packed inside a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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